component
G33N03D52
Public Made by Adomby adom
GOFORD MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
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"category": "Triode/MOS Tube/Transistor",
"subcategory": "MOSFETs",
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"type": "passive",
"description": "Source of MOSFET 1 (pin 1 at the dot marker); the device is rated VDS 30V, ID 33A."
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{
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{
"number": "3",
"name": "S2",
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"description": "Source of MOSFET 2; the device is rated VDS 30V, ID 33A."
},
{
"number": "4",
"name": "G2",
"type": "input",
"description": "Gate of MOSFET 2; absolute maximum VGS is ±20V with threshold VGS(th) of 1V min to 3V max."
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{
"number": "5",
"name": "D2",
"type": "passive",
"description": "Drain of MOSFET 2; VDS is rated 30V."
},
{
"number": "6",
"name": "D2",
"type": "passive",
"description": "Drain of MOSFET 2, tied to pin 5; VDS is rated 30V."
},
{
"number": "7",
"name": "D1",
"type": "passive",
"description": "Drain of MOSFET 1; VDS is rated 30V."
},
{
"number": "8",
"name": "D1",
"type": "passive",
"description": "Drain of MOSFET 1, tied to pin 7; VDS is rated 30V."
},
{
"number": "9",
"name": "EP",
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"description": "Exposed pad (from the footprint; not named in the datasheet pin table)."
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"cost_usd": 0.2063,
"at": "2026-10-28T21:23:04"
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"sha256": "0fd49a55c338c186",
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"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
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"described": 9,
"cites_pages": true,
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"metadata": {
"specs": {
"Manufacturer": "GOFORD",
"Package": "DFN5x6-8L",
"Category": "Triode/MOS Tube/Transistor",
"Pins": "9"
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"rows": [
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"name": "Drain-Source Voltage",
"symbol": "VDS",
"kind": "absolute_maximum",
"unit": "V",
"min": null,
"typ": null,
"max": 30,
"conditions": "",
"source_page": 1,
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{
"name": "Continuous Drain Current",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
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"conditions": "",
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{
"name": "Pulsed Drain Current",
"symbol": "IDM",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 132,
"conditions": "Repetitive rating; pulse width limited by maximum junction temperature (note 1)",
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{
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"kind": "absolute_maximum",
"unit": "V",
"min": -20,
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"conditions": "",
"source_page": 1,
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},
{
"name": "Power Dissipation",
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"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 29,
"conditions": "",
"source_page": 1,
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},
{
"name": "Single pulse avalanche energy",
"symbol": "EAS",
"kind": "absolute_maximum",
"unit": "mJ",
"min": null,
"typ": null,
"max": 42,
"conditions": "Note 2: Tj=25℃, VDD=30V, VGS=10V, L=0.5mH, Rg=25Ω",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Operating Junction and Storage Temperature Range",
"symbol": "TJ, Tstg",
"kind": "absolute_maximum",
"unit": "ºC",
"min": -55,
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{
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"unit": "ºC/W",
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{
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"unit": "ºC/W",
"min": null,
"typ": null,
"max": 4.2,
"conditions": "",
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{
"name": "Drain-Source Breakdown Voltage",
"symbol": "V(BR)DSS",
"kind": "electrical",
"unit": "V",
"min": 30,
"typ": null,
"max": null,
"conditions": "VGS = 0V, ID = 250µA",
"source_page": 2,
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{
"name": "Zero Gate Voltage Drain Current",
"symbol": "IDSS",
"kind": "electrical",
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"min": null,
"typ": null,
"max": 1,
"conditions": "VDS = 30V, VGS = 0V",
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{
"name": "Gate-Source Leakage",
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"unit": "nA",
"min": -100,
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"conditions": "VGS = ±20V",
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{
"name": "Gate-Source Threshold Voltage",
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"kind": "electrical",
"unit": "V",
"min": 1,
"typ": 1.85,
"max": 3,
"conditions": "VDS = VGS, ID = 250µA",
"source_page": 2,
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{
"name": "Drain-Source On-Resistance",
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"kind": "electrical",
"unit": "mΩ",
"min": null,
"typ": 8,
"max": 13,
"conditions": "VGS = 10V, ID = 16A",
"source_page": 2,
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{
"name": "Drain-Source On-Resistance",
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"min": null,
"typ": 26,
"max": 30,
"conditions": "VGS = 4.5V, ID = 14A",
"source_page": 2,
"source": "datasheet"
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{
"name": "Continuous Body Diode Current",
"symbol": "IS",
"kind": "electrical",
"unit": "A",
"min": null,
"typ": null,
"max": 33,
"conditions": "TC = 25ºC",
"source_page": 2,
"source": "datasheet"
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{
"name": "Body Diode Voltage",
"symbol": "VSD",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": null,
"max": 1.2,
"conditions": "TJ = 25ºC, ISD = 16A, VGS = 0V",
"source_page": 2,
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