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G33N03D52

Public Made by Adom

by adom

GOFORD MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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G33N03D52

GOFORD · MOSFETs · DFN5x6-8L

G33N03D52 from GOFORD, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (pin 1 at the dot marker); the device is rated VDS 30V, ID 33A.
2 G1 input Gate of MOSFET 1; absolute maximum VGS is ±20V with threshold VGS(th) of 1V min to 3V max.
3 S2 passive Source of MOSFET 2; the device is rated VDS 30V, ID 33A.
4 G2 input Gate of MOSFET 2; absolute maximum VGS is ±20V with threshold VGS(th) of 1V min to 3V max.
5 D2 passive Drain of MOSFET 2; VDS is rated 30V.
6 D2 passive Drain of MOSFET 2, tied to pin 5; VDS is rated 30V.
7 D1 passive Drain of MOSFET 1; VDS is rated 30V.
8 D1 passive Drain of MOSFET 1, tied to pin 7; VDS is rated 30V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer GOFORD
Package DFN5x6-8L
Category Triode/MOS Tube/Transistor
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Continuous Drain Current ID 33 A 1
Pulsed Drain Current IDM 132 A Repetitive rating; pulse width limited by maximum junction temperature (note 1) 1
Gate-Source Voltage VGS -20 20 V 1
Power Dissipation PD 29 W 1
Single pulse avalanche energy EAS 42 mJ Note 2: Tj=25℃, VDD=30V, VGS=10V, L=0.5mH, Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC 1
Thermal Resistance, Junction-to-Ambient RthJA 60 ºC/W 1
Maximum Junction-to-Case RthJC 4.2 ºC/W 1
Drain-Source Breakdown Voltage V(BR)DSS 30 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 30V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V 2
Gate-Source Threshold Voltage VGS(th) 1 1.85 3 V VDS = VGS, ID = 250µA 2
Drain-Source On-Resistance RDS(on) 8 13 mΩ VGS = 10V, ID = 16A 2
Drain-Source On-Resistance RDS(on) 26 30 mΩ VGS = 4.5V, ID = 14A 2
Continuous Body Diode Current IS 33 A TC = 25ºC 2
Body Diode Voltage VSD 1.2 V TJ = 25ºC, ISD = 16A, VGS = 0V 2

CAD (KiCad official)

  • Symbol: G33N03D52
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8L (KiCad packages3D, STEP)
  • 3D model files: g33n03d52-etched.step / g33n03d52-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); g33n03d52.step / g33n03d52.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 0fd49a55c338c186, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF