# G25N02K

**GOFORD** · MOSFETs · TO-252

G25N02K from GOFORD, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS limited to ±12 V and a threshold of 0.5 V min to 1.2 V max at 250 µA. |
| 2 | D | passive | Drain, the center lead stub, which is also the exposed metal tab; VDS is 20 V max and continuous ID is 35 A. |
| 3 | S | passive | Source; carries the 35 A continuous current and the body diode current IS of 35 A max. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 35 | A |  | 1 |
| Pulsed Drain Current (note1) | IDM |  |  | 100 | A |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Power Dissipation | PD |  |  | 40 | W |  | 1 |
| Single pulse avalanche energy (note3) | EAS |  |  | 23 | mJ |  | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | ºC |  | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 |  |  | V | VGS = 0V, ID = 250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS = 20V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VGS = ±12V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 0.5 | 0.75 | 1.2 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 7 | 13 | mΩ | VGS = 4.5V, ID = 20A | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 9 | 18 | mΩ | VGS = 2.5V, ID = 20A | 2 |
| Continuous Body Diode Current | IS |  |  | 35 | A | TC = 25ºC | 2 |
| Body Diode Voltage | VSD |  |  | 1.2 | V | TJ = 25ºC, ISD = 25A, VGS = 0V | 2 |
| Thermal Resistance, Junction-to-Case | RthJC |  | 3.8 |  | ºC/W |  | 1 |

## CAD (KiCad official)

- Symbol: `G25N02K`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `g25n02k-etched.step` / `g25n02k-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `g25n02k.step` / `g25n02k.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [GOFORD datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603035191477235712) (6 pp, sha256 `97cfae998a2422f0`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/g25n02k-datasheet.pdf)