component
G25N02K
Public Made by Adomby adom
GOFORD MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| g25n02k-etched.glb | 17d ago |
| g25n02k-etched.step | 17d ago |
| g25n02k-hero.glb | 17d ago |
| g25n02k-hero.overlay.json | 17d ago |
| g25n02k.glb | 17d ago |
| g25n02k.kicad_mod | 17d ago |
| g25n02k.kicad_sym | 17d ago |
| g25n02k.lbr | 17d ago |
| g25n02k.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
G25N02K
GOFORD · MOSFETs · TO-252
G25N02K from GOFORD, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS limited to ±12 V and a threshold of 0.5 V min to 1.2 V max at 250 µA. |
| 2 | D | passive | Drain, the center lead stub, which is also the exposed metal tab; VDS is 20 V max and continuous ID is 35 A. |
| 3 | S | passive | Source; carries the 35 A continuous current and the body diode current IS of 35 A max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Continuous Drain Current | ID | 35 | A | 1 | |||
| Pulsed Drain Current (note1) | IDM | 100 | A | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Power Dissipation | PD | 40 | W | 1 | |||
| Single pulse avalanche energy (note3) | EAS | 23 | mJ | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ºC | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 20V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±12V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 0.5 | 0.75 | 1.2 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | 7 | 13 | mΩ | VGS = 4.5V, ID = 20A | 2 | |
| Drain-Source On-Resistance | RDS(on) | 9 | 18 | mΩ | VGS = 2.5V, ID = 20A | 2 | |
| Continuous Body Diode Current | IS | 35 | A | TC = 25ºC | 2 | ||
| Body Diode Voltage | VSD | 1.2 | V | TJ = 25ºC, ISD = 25A, VGS = 0V | 2 | ||
| Thermal Resistance, Junction-to-Case | RthJC | 3.8 | ºC/W | 1 |
CAD (KiCad official)
- Symbol:
G25N02K - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
g25n02k-etched.step/g25n02k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);g25n02k.step/g25n02k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (6 pp, sha256
97cfae998a2422f0, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).