# G2309

**LGE** · MOSFETs · SOT-23

G2309 from LGE, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; -5V logic level control with gate-source voltage limited to ±20V and threshold of -1.0V to -2.5V at ID=-250μA. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous body-diode current is -1.4A max at TA=25°C. |
| 3 | D | passive | Drain of the P-channel MOSFET; rated -60V breakdown and -2A continuous (-8A pulsed) at TA=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | LGE |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Maximum Junction Temperature | TJ |  |  | 150 | °C |  | 1 |
| Storage Temperature Range | TSTG | -50 |  | 150 | °C |  | 1 |
| Pulse Drain Current Tested | IDM |  |  | -8 | A | TA=25°C | 1 |
| Continuous Drain Current | ID |  |  | -2 | A | TA=25°C | 1 |
| Continuous Drain Current | ID |  |  | -1.6 | A | TA=70°C | 1 |
| Maximum Power Dissipation | PD |  |  | 1 | W | TA=25°C | 1 |
| Maximum Power Dissipation | PD |  |  | 0.8 | W | TA=70°C | 1 |
| Thermal Resistance Junction-Ambient | RJA |  |  | 125 | °C/W |  | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -60 |  |  | V | VGS=0V ID=-250μA | 2 |
| Zero Gate Voltage Drain Current (TA=25℃) | IDSS |  |  | -1 | μA | VDS=-60V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current (TA=125℃) | IDSS |  |  | -100 | uA | VDS=-60V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(TH) | -1 | -1.5 | -2.5 | V | VDS=VGS, ID=-250μA | 2 |
| Drain-Source On-State Resistance (VGS=-10V) | RDS(ON) |  | 150 | 200 | mΩ | VGS=-10V, ID=-2A | 2 |
| Drain-Source On-State Resistance (VGS=-4.5V) | RDS(ON) |  | 200 | 300 | mΩ | VGS=-4.5V, ID=-1A | 2 |
| Source drain current (Body Diode) | ISD |  |  | -1.4 | A | TA=25℃ | 2 |
| Forward on voltage | VSD |  | -0.84 | -1.2 | V | Tj=25℃, ISD=-2A, VGS=0V | 2 |

## CAD (KiCad official)

- Symbol: `G2309`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `g2309-etched.step` / `g2309-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `g2309.step` / `g2309.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [LGE datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603384313455403008) (5 pp, sha256 `a84ba556dcfdec62`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/g2309-datasheet.pdf)