component
G2309
Public Made by Adomby adom
LGE MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownG2309
LGE · MOSFETs · SOT-23
G2309 from LGE, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; -5V logic level control with gate-source voltage limited to ±20V and threshold of -1.0V to -2.5V at ID=-250μA. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous body-diode current is -1.4A max at TA=25°C. |
| 3 | D | passive | Drain of the P-channel MOSFET; rated -60V breakdown and -2A continuous (-8A pulsed) at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | LGE |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Maximum Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -50 | 150 | °C | 1 | ||
| Pulse Drain Current Tested | IDM | -8 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | -2 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | -1.6 | A | TA=70°C | 1 | ||
| Maximum Power Dissipation | PD | 1 | W | TA=25°C | 1 | ||
| Maximum Power Dissipation | PD | 0.8 | W | TA=70°C | 1 | ||
| Thermal Resistance Junction-Ambient | RJA | 125 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -60 | V | VGS=0V ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current (TA=25℃) | IDSS | -1 | μA | VDS=-60V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (TA=125℃) | IDSS | -100 | uA | VDS=-60V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | -1 | -1.5 | -2.5 | V | VDS=VGS, ID=-250μA | 2 |
| Drain-Source On-State Resistance (VGS=-10V) | RDS(ON) | 150 | 200 | mΩ | VGS=-10V, ID=-2A | 2 | |
| Drain-Source On-State Resistance (VGS=-4.5V) | RDS(ON) | 200 | 300 | mΩ | VGS=-4.5V, ID=-1A | 2 | |
| Source drain current (Body Diode) | ISD | -1.4 | A | TA=25℃ | 2 | ||
| Forward on voltage | VSD | -0.84 | -1.2 | V | Tj=25℃, ISD=-2A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
G2309 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
g2309-etched.step/g2309-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);g2309.step/g2309.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: LGE datasheet (5 pp, sha256
a84ba556dcfdec62, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).