# FZT653

**TWGMC** · Bipolar (BJT) · SOT-223

FZT653 from TWGMC, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the NPN transistor; the datasheet gives emitter-base breakdown BVEBO of 5 V minimum at IE = 100 µA and a base-emitter saturation voltage VBE(sat) of 1.25 V at IC = 1 A, IB = 100 mA. |
| 2 | COLLECTOR | passive | Collector terminal; the datasheet rates collector-base voltage BVCBO at 120 V, collector-emitter voltage BVCEO at 100 V, and continuous collector current IC at 3 A. |
| 3 | EMITTER | passive | Emitter terminal; the datasheet rates emitter-base voltage BVEBO at 5 V and gives a maximum power dissipation PTOT of 2 W at TC = 25 ℃. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | TWGMC |
| Package | SOT-223 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | 120 |  |  | V | IC = 100μA，IE = 0 | 1 |
| Collector-emitter breakdown voltage | BVCEO | 100 |  |  | V | IC = 1mA，IB = 0 | 1 |
| Emitter-base breakdown voltage | BVEBO | 5 |  |  | V | IE = 100μA，IC = 0 | 1 |
| Collector cut-off current | ICBO |  |  | 0.1 | µA | VCB = 100V，IB = 0 | 1 |
| Emitter cut-off current | IEBO |  |  | 0.1 | µA | VEB = 4V，IC = 0 | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | 0.3 | V | IC = 1A，IB = 100mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | 0.5 | V | IC = 2A，IB = 200mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | 1.25 | V | IC = 1A，IB = 100mA | 1 |
| Base-emitter turn-on voltage | VBE(on) |  |  | 1 | V | VCE = 2V，IC= 1A | 1 |
| Output capacitance | Cob |  |  | 30 | pF | VCB = 10V, IE = 0,f=1MHz | 1 |
| Transition frequency | fT |  | 140 |  | MHz | VCE = 5V，IC = 100mA | 1 |
| Collector-base voltage | BVCBO |  |  | 120 | V |  | 1 |
| Collector-emitter voltage | BVCEO |  |  | 100 | V |  | 1 |
| Emitter-base voltage | BVEBO |  |  | 5 | V |  | 1 |
| Continuous collector current | IC |  |  | 3 | A |  | 1 |
| Peak pulse current | ICM |  |  | 6 | A |  | 1 |
| Power dissipation | PTOT |  |  | 2 | W | TC=25℃ | 1 |
| Junction temperature | Tj |  |  | 150 | ℃ |  | 1 |
| Storage temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |

## CAD (KiCad official)

- Symbol: `FZT653`
- Footprint: `Package_TO_SOT_SMD:SOT-223-3_TabPin2`
- 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files: `fzt653-etched.step` / `fzt653-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fzt653.step` / `fzt653.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [TWGMC datasheet](docs/fzt653-datasheet.pdf) (3 pp, sha256 `29c8339741660bd1`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fzt653-datasheet.pdf)