component
FZT653
Public Made by Adomby adom
TWGMC Bipolar (BJT), SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| fzt653-etched.glb | 23d ago |
| fzt653-etched.step | 23d ago |
| fzt653-hero.glb | 23d ago |
| fzt653-hero.overlay.json | 23d ago |
| fzt653.glb | 23d ago |
| fzt653.kicad_mod | 23d ago |
| fzt653.kicad_sym | 23d ago |
| fzt653.lbr | 23d ago |
| fzt653.step | 23d ago |
| package.json | 23d ago |
| page.json | 23d ago |
| README.md | 23d ago |
FZT653
TWGMC · Bipolar (BJT) · SOT-223
FZT653 from TWGMC, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the NPN transistor; the datasheet gives emitter-base breakdown BVEBO of 5 V minimum at IE = 100 µA and a base-emitter saturation voltage VBE(sat) of 1.25 V at IC = 1 A, IB = 100 mA. |
| 2 | COLLECTOR | passive | Collector terminal; the datasheet rates collector-base voltage BVCBO at 120 V, collector-emitter voltage BVCEO at 100 V, and continuous collector current IC at 3 A. |
| 3 | EMITTER | passive | Emitter terminal; the datasheet rates emitter-base voltage BVEBO at 5 V and gives a maximum power dissipation PTOT of 2 W at TC = 25 ℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TWGMC |
| Package | SOT-223 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | 120 | V | IC = 100μA,IE = 0 | 1 | ||
| Collector-emitter breakdown voltage | BVCEO | 100 | V | IC = 1mA,IB = 0 | 1 | ||
| Emitter-base breakdown voltage | BVEBO | 5 | V | IE = 100μA,IC = 0 | 1 | ||
| Collector cut-off current | ICBO | 0.1 | µA | VCB = 100V,IB = 0 | 1 | ||
| Emitter cut-off current | IEBO | 0.1 | µA | VEB = 4V,IC = 0 | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.3 | V | IC = 1A,IB = 100mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.5 | V | IC = 2A,IB = 200mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.25 | V | IC = 1A,IB = 100mA | 1 | ||
| Base-emitter turn-on voltage | VBE(on) | 1 | V | VCE = 2V,IC= 1A | 1 | ||
| Output capacitance | Cob | 30 | pF | VCB = 10V, IE = 0,f=1MHz | 1 | ||
| Transition frequency | fT | 140 | MHz | VCE = 5V,IC = 100mA | 1 | ||
| Collector-base voltage | BVCBO | 120 | V | 1 | |||
| Collector-emitter voltage | BVCEO | 100 | V | 1 | |||
| Emitter-base voltage | BVEBO | 5 | V | 1 | |||
| Continuous collector current | IC | 3 | A | 1 | |||
| Peak pulse current | ICM | 6 | A | 1 | |||
| Power dissipation | PTOT | 2 | W | TC=25℃ | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
FZT653 - Footprint:
Package_TO_SOT_SMD:SOT-223-3_TabPin2 - 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files:
fzt653-etched.step/fzt653-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fzt653.step/fzt653.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TWGMC datasheet (3 pp, sha256
29c8339741660bd1, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).