component
FTD150N10N
Public Made by Adomby adom
CRMICRO MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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FTD150N10N
CRMICRO · MOSFETs · TO-252
FTD150N10N from CRMICRO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS limited to ±20 V and threshold VGS(TH) of 1.8 V min to 2.9 V max at 250 µA. |
| 2 | D | passive | Drain (also the tab); 100 V VDSS, 14 A continuous drain current and 56 A pulsed. |
| 3 | S | passive | Source; body-diode continuous current is 14 A and pulsed current is 56 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CRMICRO |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 100 | V | 1 | |||
| Continuous Drain Current | ID | 14 | A | 1 | |||
| Continuous Drain Current | ID | 8.2 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 56 | A | Repetitive rating, note *1 | 1 | ||
| Power Dissipation | PD | 43.1 | W | 1 | |||
| Derating Factor above 25℃ | 0.34 | W/℃ | above 25℃ | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 28.8 | mJ | Note *2: L=1mH, ID=7.6A, Start TJ=25℃ | 1 | ||
| Avalanche Current | IAS | 7.6 | A | 1 | |||
| Maximum Temperature for Soldering | TL | 300 | ℃ | 1 | |||
| Operating Junction and Storage Temperature Range | TJ and TSTG | -55 | 150 | ℃ | 1 | ||
| Junction-to-Case Thermal Resistance | RθJC | 2.9 | ℃/W | Water cooled heatsink, PD adjusted for peak junction temperature +150℃ | 1 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 100 | ℃/W | 1 cubic foot chamber, free air | 1 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250μA | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | μA | VDS=100V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 100 | μA | VDS=80V, VGS=0V, TJ=125℃ | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=+20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-20V | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 113 | 150 | mΩ | VGS=10V, ID=4A | 2 | |
| Static Drain-to-Source On-Resistance | RDS(ON) | 135 | 190 | mΩ | VGS=4.5V, ID=3A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 1.8 | 2.4 | 2.9 | V | VDS=VGS, ID=250μA; pulse width ≤300μs, duty cycle ≤2% | 2 |
| Continuous Source Current (Body Diode) | IS | 14 | A | TC=25℃ | 3 | ||
| Maximum Pulsed Current (Body Diode) | ISM | 56 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.5 | V | ISD=4A, VGS=0V | 3 |
CAD (KiCad official)
- Symbol:
FTD150N10N - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
ftd150n10n-etched.step/ftd150n10n-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ftd150n10n.step/ftd150n10n.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CRMICRO datasheet (8 pp, sha256
05ed6b29ad6e1f78, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FTD150N10N
**CRMICRO** · MOSFETs · TO-252
FTD150N10N from CRMICRO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS limited to ±20 V and threshold VGS(TH) of 1.8 V min to 2.9 V max at 250 µA. |
| 2 | D | passive | Drain (also the tab); 100 V VDSS, 14 A continuous drain current and 56 A pulsed. |
| 3 | S | passive | Source; body-diode continuous current is 14 A and pulsed current is 56 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CRMICRO |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | | | 100 | V | | 1 |
| Continuous Drain Current | ID | | | 14 | A | | 1 |
| Continuous Drain Current | ID | | | 8.2 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM | | | 56 | A | Repetitive rating, note *1 | 1 |
| Power Dissipation | PD | | | 43.1 | W | | 1 |
| Derating Factor above 25℃ | | | | 0.34 | W/℃ | above 25℃ | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 28.8 | mJ | Note *2: L=1mH, ID=7.6A, Start TJ=25℃ | 1 |
| Avalanche Current | IAS | | | 7.6 | A | | 1 |
| Maximum Temperature for Soldering | TL | | | 300 | ℃ | | 1 |
| Operating Junction and Storage Temperature Range | TJ and TSTG | -55 | | 150 | ℃ | | 1 |
| Junction-to-Case Thermal Resistance | RθJC | | | 2.9 | ℃/W | Water cooled heatsink, PD adjusted for peak junction temperature +150℃ | 1 |
| Junction-to-Ambient Thermal Resistance | RθJA | | | 100 | ℃/W | 1 cubic foot chamber, free air | 1 |
| Drain-to-Source Breakdown Voltage | BVDSS | 100 | | | V | VGS=0V, ID=250μA | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 1 | μA | VDS=100V, VGS=0V, TJ=25℃ | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 100 | μA | VDS=80V, VGS=0V, TJ=125℃ | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS=+20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS=-20V | 2 |
| Static Drain-to-Source On-Resistance | RDS(ON) | | 113 | 150 | mΩ | VGS=10V, ID=4A | 2 |
| Static Drain-to-Source On-Resistance | RDS(ON) | | 135 | 190 | mΩ | VGS=4.5V, ID=3A | 2 |
| Gate Threshold Voltage | VGS(TH) | 1.8 | 2.4 | 2.9 | V | VDS=VGS, ID=250μA; pulse width ≤300μs, duty cycle ≤2% | 2 |
| Continuous Source Current (Body Diode) | IS | | | 14 | A | TC=25℃ | 3 |
| Maximum Pulsed Current (Body Diode) | ISM | | | 56 | A | | 3 |
| Diode Forward Voltage | VSD | | | 1.5 | V | ISD=4A, VGS=0V | 3 |
## CAD (KiCad official)
- Symbol: `FTD150N10N`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `ftd150n10n-etched.step` / `ftd150n10n-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ftd150n10n.step` / `ftd150n10n.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [CRMICRO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603109928962187264) (8 pp, sha256 `05ed6b29ad6e1f78`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ftd150n10n-datasheet.pdf)