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FTD150N10N

CRMICRO · MOSFETs · TO-252

FTD150N10N from CRMICRO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS limited to ±20 V and threshold VGS(TH) of 1.8 V min to 2.9 V max at 250 µA.
2 D passive Drain (also the tab); 100 V VDSS, 14 A continuous drain current and 56 A pulsed.
3 S passive Source; body-diode continuous current is 14 A and pulsed current is 56 A.

Key specifications

Parameter Value
Manufacturer CRMICRO
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 100 V 1
Continuous Drain Current ID 14 A 1
Continuous Drain Current ID 8.2 A TC=100℃ 1
Pulsed Drain Current IDM 56 A Repetitive rating, note *1 1
Power Dissipation PD 43.1 W 1
Derating Factor above 25℃ 0.34 W/℃ above 25℃ 1
Gate-to-Source Voltage VGS -20 20 V 1
Single Pulse Avalanche Energy EAS 28.8 mJ Note *2: L=1mH, ID=7.6A, Start TJ=25℃ 1
Avalanche Current IAS 7.6 A 1
Maximum Temperature for Soldering TL 300 ℃ 1
Operating Junction and Storage Temperature Range TJ and TSTG -55 150 ℃ 1
Junction-to-Case Thermal Resistance RθJC 2.9 ℃/W Water cooled heatsink, PD adjusted for peak junction temperature +150℃ 1
Junction-to-Ambient Thermal Resistance RθJA 100 ℃/W 1 cubic foot chamber, free air 1
Drain-to-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250μA 2
Drain-to-Source Leakage Current IDSS 1 μA VDS=100V, VGS=0V, TJ=25℃ 2
Drain-to-Source Leakage Current IDSS 100 μA VDS=80V, VGS=0V, TJ=125℃ 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS=+20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-20V 2
Static Drain-to-Source On-Resistance RDS(ON) 113 150 mΩ VGS=10V, ID=4A 2
Static Drain-to-Source On-Resistance RDS(ON) 135 190 mΩ VGS=4.5V, ID=3A 2
Gate Threshold Voltage VGS(TH) 1.8 2.4 2.9 V VDS=VGS, ID=250μA; pulse width ≤300μs, duty cycle ≤2% 2
Continuous Source Current (Body Diode) IS 14 A TC=25℃ 3
Maximum Pulsed Current (Body Diode) ISM 56 A 3
Diode Forward Voltage VSD 1.5 V ISD=4A, VGS=0V 3

CAD (KiCad official)

  • Symbol: FTD150N10N
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ftd150n10n-etched.step / ftd150n10n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ftd150n10n.step / ftd150n10n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CRMICRO datasheet (8 pp, sha256 05ed6b29ad6e1f78, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF