component
FS4559
Public Made by Adomby adom
FOSAN MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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FS4559
FOSAN · MOSFETs · SOP-8
FS4559 from FOSAN, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of MOSFET 2, at the pin-1 corner of the SOP-8. |
| 2 | G2 | input | Gate of MOSFET 2, with a rated gate-source voltage of ±20 V. |
| 3 | S1 | passive | Source of MOSFET 1. |
| 4 | G1 | input | Gate of MOSFET 1, with a rated gate-source voltage of ±20 V. |
| 5 | D1 | passive | Drain of MOSFET 1, tied internally to pin 6; the drain-source rating is 60 V (N) or -60 V (P). |
| 6 | D1 | passive | Drain of MOSFET 1, tied internally to pin 5. |
| 7 | D2 | passive | Drain of MOSFET 2, tied internally to pin 8; the drain-source rating is 60 V (N) or -60 V (P). |
| 8 | D2 | passive | Drain of MOSFET 2, tied internally to pin 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | FOSAN |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (N-channel) | BVDSS | 60 | V | ID=250uA, VGS=0V | 2 | ||
| Gate Threshold Voltage (N-channel) | VGS(th) | 1 | 1.7 | 2.5 | V | ID=250uA, VGS=VDS | 2 |
| Zero Gate Voltage Drain Current (N-channel) | IDSS | 1 | uA | VGS=0V, VDS=48V | 2 | ||
| Gate Body Leakage (N-channel) | IGSS | 100 | nA | VGS=+20V, VDS=0V | 2 | ||
| Static Drain-Source On-State Resistance (N-channel) | RDS(ON) | 37 | 58 | mΩ | ID=4.5A, VGS=10V | 2 | |
| Static Drain-Source On-State Resistance (N-channel) | RDS(ON) | 42 | 60 | mΩ | ID=3A, VGS=4.5V | 2 | |
| Diode Forward Voltage Drop (N-channel body diode) | VSD | 0.76 | 1 | V | ISD=1A, VGS=0V | 2 | |
| Drain-Source Breakdown Voltage (P-channel) | BVDSS | -60 | V | ID = -250uA, VGS=0V | 3 | ||
| Gate Threshold Voltage (P-channel) | VGS(th) | -1 | -1.8 | -2.5 | V | ID = -250uA, VGS= VDS | 3 |
| Zero Gate Voltage Drain Current (P-channel) | IDSS | -1 | uA | VGS=0V, VDS= -48V | 3 | ||
| Gate Body Leakage (P-channel) | IGSS | 100 | nA | VGS=+20V, VDS=0V | 3 | ||
| Static Drain-Source On-State Resistance (P-channel) | RDS(ON) | 70 | 90 | mΩ | ID= -3.2A, VGS= -10V | 3 | |
| Static Drain-Source On-State Resistance (P-channel) | RDS(ON) | 93 | 125 | mΩ | ID= -2.8A, VGS= -4.5V | 3 | |
| Diode Forward Voltage Drop (P-channel body diode) | VSD | -0.77 | -1 | V | ISD= -1A, VGS=0V | 3 | |
| Drain-Source Voltage (N-channel) | BVDSS | 60 | V | N-channel | 1 | ||
| Drain-Source Voltage (P-channel) | BVDSS | -60 | V | P-channel | 1 | ||
| Gate-Source Voltage (N-channel) | VGS | 20 | V | N-channel | 1 | ||
| Gate-Source Voltage (P-channel) | VGS | 20 | V | P-channel | 1 | ||
| Drain Current continuous (N-channel) | ID | 4.5 | A | TA = 25°C | 1 | ||
| Drain Current continuous (N-channel) | ID | 3.6 | A | TA = 70°C | 1 | ||
| Drain Current continuous (P-channel) | ID | -3.2 | A | TA = 25°C | 1 | ||
| Drain Current continuous (P-channel) | ID | -2.8 | A | TA = 70°C | 1 | ||
| Drain Current pulsed (N-channel) | IDM | 20 | A | 1 | |||
| Drain Current pulsed (P-channel) | IDM | -20 | A | 1 | |||
| Total Device Dissipation | PTOT | 1 | W | TA = 25°C | 1 | ||
| Total Device Dissipation | PTOT | 0.7 | W | TA = 70°C | 1 | ||
| Thermal Resistance Junction-Ambient | RΘJA | 125 | ℃/W | 1 | |||
| Avalanche Energy Single Pulse | EAS | 25 | mJ | Single pulse | 1 | ||
| Junction/Storage Temperature | TJ,Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
FS4559 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
fs4559-etched.step/fs4559-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fs4559.step/fs4559.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: FOSAN datasheet (8 pp, sha256
0d51bf0d623777e9, retrieved 2026-10-18, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FS4559
**FOSAN** · MOSFETs · SOP-8
FS4559 from FOSAN, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of MOSFET 2, at the pin-1 corner of the SOP-8. |
| 2 | G2 | input | Gate of MOSFET 2, with a rated gate-source voltage of ±20 V. |
| 3 | S1 | passive | Source of MOSFET 1. |
| 4 | G1 | input | Gate of MOSFET 1, with a rated gate-source voltage of ±20 V. |
| 5 | D1 | passive | Drain of MOSFET 1, tied internally to pin 6; the drain-source rating is 60 V (N) or -60 V (P). |
| 6 | D1 | passive | Drain of MOSFET 1, tied internally to pin 5. |
| 7 | D2 | passive | Drain of MOSFET 2, tied internally to pin 8; the drain-source rating is 60 V (N) or -60 V (P). |
| 8 | D2 | passive | Drain of MOSFET 2, tied internally to pin 7. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | FOSAN |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage (N-channel) | BVDSS | 60 | | | V | ID=250uA, VGS=0V | 2 |
| Gate Threshold Voltage (N-channel) | VGS(th) | 1 | 1.7 | 2.5 | V | ID=250uA, VGS=VDS | 2 |
| Zero Gate Voltage Drain Current (N-channel) | IDSS | | | 1 | uA | VGS=0V, VDS=48V | 2 |
| Gate Body Leakage (N-channel) | IGSS | | | 100 | nA | VGS=+20V, VDS=0V | 2 |
| Static Drain-Source On-State Resistance (N-channel) | RDS(ON) | | 37 | 58 | mΩ | ID=4.5A, VGS=10V | 2 |
| Static Drain-Source On-State Resistance (N-channel) | RDS(ON) | | 42 | 60 | mΩ | ID=3A, VGS=4.5V | 2 |
| Diode Forward Voltage Drop (N-channel body diode) | VSD | | 0.76 | 1 | V | ISD=1A, VGS=0V | 2 |
| Drain-Source Breakdown Voltage (P-channel) | BVDSS | -60 | | | V | ID = -250uA, VGS=0V | 3 |
| Gate Threshold Voltage (P-channel) | VGS(th) | -1 | -1.8 | -2.5 | V | ID = -250uA, VGS= VDS | 3 |
| Zero Gate Voltage Drain Current (P-channel) | IDSS | | | -1 | uA | VGS=0V, VDS= -48V | 3 |
| Gate Body Leakage (P-channel) | IGSS | | | 100 | nA | VGS=+20V, VDS=0V | 3 |
| Static Drain-Source On-State Resistance (P-channel) | RDS(ON) | | 70 | 90 | mΩ | ID= -3.2A, VGS= -10V | 3 |
| Static Drain-Source On-State Resistance (P-channel) | RDS(ON) | | 93 | 125 | mΩ | ID= -2.8A, VGS= -4.5V | 3 |
| Diode Forward Voltage Drop (P-channel body diode) | VSD | | -0.77 | -1 | V | ISD= -1A, VGS=0V | 3 |
| Drain-Source Voltage (N-channel) | BVDSS | | | 60 | V | N-channel | 1 |
| Drain-Source Voltage (P-channel) | BVDSS | -60 | | | V | P-channel | 1 |
| Gate-Source Voltage (N-channel) | VGS | | | 20 | V | N-channel | 1 |
| Gate-Source Voltage (P-channel) | VGS | | | 20 | V | P-channel | 1 |
| Drain Current continuous (N-channel) | ID | | | 4.5 | A | TA = 25°C | 1 |
| Drain Current continuous (N-channel) | ID | | | 3.6 | A | TA = 70°C | 1 |
| Drain Current continuous (P-channel) | ID | -3.2 | | | A | TA = 25°C | 1 |
| Drain Current continuous (P-channel) | ID | -2.8 | | | A | TA = 70°C | 1 |
| Drain Current pulsed (N-channel) | IDM | | | 20 | A | | 1 |
| Drain Current pulsed (P-channel) | IDM | -20 | | | A | | 1 |
| Total Device Dissipation | PTOT | | | 1 | W | TA = 25°C | 1 |
| Total Device Dissipation | PTOT | | | 0.7 | W | TA = 70°C | 1 |
| Thermal Resistance Junction-Ambient | RΘJA | | | 125 | ℃/W | | 1 |
| Avalanche Energy Single Pulse | EAS | | | 25 | mJ | Single pulse | 1 |
| Junction/Storage Temperature | TJ,Tstg | -55 | | 150 | ℃ | | 1 |
## CAD (KiCad official)
- Symbol: `FS4559`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `fs4559-etched.step` / `fs4559-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fs4559.step` / `fs4559.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [FOSAN datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757316810586624000) (8 pp, sha256 `0d51bf0d623777e9`, retrieved 2026-10-18, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fs4559-datasheet.pdf)