component

FQP6N80C

Public Made by Adom

by adom

onsemi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorfqp6n80cfactory-2.0.0extractor-text

Verified FQP6N80C

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: FQP6N80C · TO-220 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 12-page datasheet
  • ✓distributor: lcsc C462766, digikey FQP6N80C-ND, mouser 512-FQP6N80C
  • ✓family: TO-220-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-wyg8iluu/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ fqp6n80c.kicad_sym✓ fqp6n80c.kicad_mod✓ fqp6n80c.step
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Ray Publish 0.1.0 d96f42b 7d ago

FQP6N80C

onsemi · MOSFETs · TO-220

FQP6N80C from onsemi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the gate-source voltage is rated at ±30 V (VGSS).
2 D passive Drain terminal; rated for 800 V drain-source voltage (VDSS) and 5.5 A continuous drain current at TC = 25°C.
3 S passive Source terminal; maximum continuous drain-source diode forward current is 5.5 A (IS).

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 800 V 2
Drain Current - Continuous (TC = 25°C) ID 5.5 A TC = 25°C 2
Drain Current - Continuous (TC = 100°C) ID 3.2 A TC = 100°C 2
Drain Current - Pulsed (Note 1) IDM 22 A 2
Gate-Source Voltage VGSS -30 30 V 2
Single Pulsed Avalanche Energy (Note 2) EAS 680 mJ 2
Avalanche Current (Note 1) IAR 5.5 A 2
Repetitive Avalanche Energy (Note 1) EAR 15.8 mJ 2
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns 2
Power Dissipation (TC = 25°C) PD 158 W TC = 25°C 2
Derate above 25°C PD 1.27 W/°C Derate above 25°C 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Maximum Lead Temperature for Soldering TL 300 °C 1/8" from case for 5 seconds 2
Thermal Resistance, Junction-to-Case, Max. RθJC 0.79 °C/W 2
Thermal Resistance, Case-to-Sink Typ, Max. RθCS 0.5 °C/W 2
Thermal Resistance, Junction-to-Ambient, Max. RθJA 62.5 °C/W 2
Drain-Source Breakdown Voltage BVDSS 800 V VGS = 0 V, ID = 250 µA 3
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 800 V, VGS = 0 V 3
Zero Gate Voltage Drain Current IDSS 100 µA VDS = 640 V, TC = 125°C 3
Gate-Body Leakage Current, Forward IGSSF 100 nA VGS = 30 V, VDS = 0 V 3
Gate-Body Leakage Current, Reverse IGSSR -100 nA VGS = -30 V, VDS = 0 V 3
Gate Threshold Voltage VGS(th) 3 5 V VDS = VGS, ID = 250 µA 3
Static Drain-Source On-Resistance RDS(on) 2.1 2.5 Ω VGS = 10 V, ID = 2.75 A 3
Input Capacitance Ciss 1010 1310 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 3
Output Capacitance Coss 90 115 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 3
Reverse Transfer Capacitance Crss 8 11 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 3
Turn-On Delay Time td(on) 26 60 ns VDD = 400 V, ID = 5.5 A, RG = 25 Ω (Note 4) 3
Turn-On Rise Time tr 65 140 ns VDD = 400 V, ID = 5.5 A, RG = 25 Ω (Note 4) 3
Turn-Off Delay Time td(off) 47 105 ns VDD = 400 V, ID = 5.5 A, RG = 25 Ω (Note 4) 3
Turn-Off Fall Time tf 44 90 ns VDD = 400 V, ID = 5.5 A, RG = 25 Ω (Note 4) 3
Total Gate Charge Qg 21 30 nC VDS = 640 V, ID = 5.5 A, VGS = 10 V (Note 4) 3
Maximum Continuous Drain-Source Diode Forward Current IS 5.5 A 3
Maximum Pulsed Drain-Source Diode Forward Current ISM 22 A 3
Drain-Source Diode Forward Voltage VSD 1.4 V VGS = 0 V, IS = 5.5 A 3

CAD (KiCad official)

  • Symbol: FQP6N80C
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: fqp6n80c-etched.step / fqp6n80c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fqp6n80c.step / fqp6n80c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (12 pp, sha256 79ef447086a8abd7, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF