FQP6N80C from onsemi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate terminal; the gate-source voltage is rated at ±30 V (VGSS).
2	D	passive	Drain terminal; rated for 800 V drain-source voltage (VDSS) and 5.5 A continuous drain current at TC = 25°C.
3	S	passive	Source terminal; maximum continuous drain-source diode forward current is 5.5 A (IS).

Key specifications

Parameter	Value
Manufacturer	onsemi
Package	TO-220
Category	Triode/MOS Tube/Transistor
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDSS			800	V		2
Drain Current - Continuous (TC = 25°C)	ID			5.5	A	TC = 25°C	2
Drain Current - Continuous (TC = 100°C)	ID			3.2	A	TC = 100°C	2
Drain Current - Pulsed (Note 1)	IDM			22	A		2
Gate-Source Voltage	VGSS	-30		30	V		2
Single Pulsed Avalanche Energy (Note 2)	EAS			680	mJ		2
Avalanche Current (Note 1)	IAR			5.5	A		2
Repetitive Avalanche Energy (Note 1)	EAR			15.8	mJ		2
Peak Diode Recovery dv/dt (Note 3)	dv/dt			4.5	V/ns		2
Power Dissipation (TC = 25°C)	PD			158	W	TC = 25°C	2
Derate above 25°C	PD			1.27	W/°C	Derate above 25°C	2
Operating and Storage Temperature Range	TJ, TSTG	-55		150	°C		2
Maximum Lead Temperature for Soldering	TL			300	°C	1/8" from case for 5 seconds	2
Thermal Resistance, Junction-to-Case, Max.	RθJC			0.79	°C/W		2
Thermal Resistance, Case-to-Sink Typ, Max.	RθCS		0.5		°C/W		2
Thermal Resistance, Junction-to-Ambient, Max.	RθJA			62.5	°C/W		2
Drain-Source Breakdown Voltage	BVDSS	800			V	VGS = 0 V, ID = 250 µA	3
Zero Gate Voltage Drain Current	IDSS			10	µA	VDS = 800 V, VGS = 0 V	3
Zero Gate Voltage Drain Current	IDSS			100	µA	VDS = 640 V, TC = 125°C	3
Gate-Body Leakage Current, Forward	IGSSF			100	nA	VGS = 30 V, VDS = 0 V	3
Gate-Body Leakage Current, Reverse	IGSSR			-100	nA	VGS = -30 V, VDS = 0 V	3
Gate Threshold Voltage	VGS(th)	3		5	V	VDS = VGS, ID = 250 µA	3
Static Drain-Source On-Resistance	RDS(on)		2.1	2.5	Ω	VGS = 10 V, ID = 2.75 A	3
Input Capacitance	Ciss		1010	1310	pF	VDS = 25 V, VGS = 0 V, f = 1.0 MHz	3
Output Capacitance	Coss		90	115	pF	VDS = 25 V, VGS = 0 V, f = 1.0 MHz	3
Reverse Transfer Capacitance	Crss		8	11	pF	VDS = 25 V, VGS = 0 V, f = 1.0 MHz	3
Turn-On Delay Time	td(on)		26	60	ns	VDD = 400 V, ID = 5.5 A, RG = 25 Ω (Note 4)	3
Turn-On Rise Time	tr		65	140	ns	VDD = 400 V, ID = 5.5 A, RG = 25 Ω (Note 4)	3
Turn-Off Delay Time	td(off)		47	105	ns	VDD = 400 V, ID = 5.5 A, RG = 25 Ω (Note 4)	3
Turn-Off Fall Time	tf		44	90	ns	VDD = 400 V, ID = 5.5 A, RG = 25 Ω (Note 4)	3
Total Gate Charge	Qg		21	30	nC	VDS = 640 V, ID = 5.5 A, VGS = 10 V (Note 4)	3
Maximum Continuous Drain-Source Diode Forward Current	IS			5.5	A		3
Maximum Pulsed Drain-Source Diode Forward Current	ISM			22	A		3
Drain-Source Diode Forward Voltage	VSD			1.4	V	VGS = 0 V, IS = 5.5 A	3

CAD (KiCad official)

Symbol: FQP6N80C
Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
3D model: TO-220 (KiCad packages3D, STEP)
3D model files: fqp6n80c-etched.step / fqp6n80c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fqp6n80c.step / fqp6n80c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: onsemi datasheet (12 pp, sha256 79ef447086a8abd7, retrieved 2026-10-30, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

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FQP6N80C

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3D Model

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Datasheet

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