component
FQD7N10LTM
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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FQD7N10LTM
UMW · MOSFETs · TO-252
FQD7N10LTM from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE: MOSFET gate; gate-source voltage is rated ±20 V (VGSS), per the absolute maximum ratings. |
| 2 | D | passive | DRAIN: MOSFET drain; drain-source voltage is rated 100 V (VDSS) and continuous drain current 5.8 A at TC=25°C. |
| 3 | S | passive | SOURCE: MOSFET source; reference terminal for the gate-source voltage rating of ±20 V (VGSS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
FQD7N10LTM - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
fqd7n10ltm-etched.step/fqd7n10ltm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fqd7n10ltm.step/fqd7n10ltm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (10 pp, sha256
ff67da65fa98560a, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FQD7N10LTM
**UMW** · MOSFETs · TO-252
FQD7N10LTM from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE: MOSFET gate; gate-source voltage is rated ±20 V (VGSS), per the absolute maximum ratings. |
| 2 | D | passive | DRAIN: MOSFET drain; drain-source voltage is rated 100 V (VDSS) and continuous drain current 5.8 A at TC=25°C. |
| 3 | S | passive | SOURCE: MOSFET source; reference terminal for the gate-source voltage rating of ±20 V (VGSS). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## CAD (KiCad official)
- Symbol: `FQD7N10LTM`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `fqd7n10ltm-etched.step` / `fqd7n10ltm-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fqd7n10ltm.step` / `fqd7n10ltm.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755879755575111680) (10 pp, sha256 `ff67da65fa98560a`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fqd7n10ltm-datasheet.pdf)