# FQD5P20TM

**onsemi** · MOSFETs · DPAK

FQD5P20TM from onsemi, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET; gate-source voltage is rated ±30 V and threshold is -3.0 to -5.0 V. |
| 2 | D | passive | Drain terminal (also connected to the tab); drain-source voltage rated -200 V with continuous drain current -3.7 A at TC = 25°C. |
| 3 | S | passive | Source terminal of the P-channel MOSFET; maximum continuous drain-source diode forward current is -3.7 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | DPAK |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -200 |  |  | V | VGS = 0 V, ID = -250 µA | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS = -200 V, VGS = 0 V | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -10 | µA | VDS = -160 V, TC = 125°C | 3 |
| Gate-Body Leakage Current, Forward | IGSSF |  |  | -100 | nA | VGS = -30 V, VDS = 0 V | 3 |
| Gate-Body Leakage Current, Reverse | IGSSR |  |  | 100 | nA | VGS = 30 V, VDS = 0 V | 3 |
| Gate Threshold Voltage | VGS(th) | -3 |  | -5 | V | VDS = VGS, ID = -250 µA | 3 |
| Static Drain-Source On-Resistance | RDS(on) |  | 1.1 | 1.4 | Ω | VGS = -10 V, ID = -1.85 A | 3 |
| Input Capacitance | Ciss |  | 330 | 430 | pF | VDS = -25 V, VGS = 0 V, f = 1.0 MHz | 3 |
| Output Capacitance | Coss |  | 75 | 98 | pF | VDS = -25 V, VGS = 0 V, f = 1.0 MHz | 3 |
| Reverse Transfer Capacitance | Crss |  | 12 | 15 | pF | VDS = -25 V, VGS = 0 V, f = 1.0 MHz | 3 |
| Turn-On Delay Time | td(on) |  | 9 | 28 | ns | VDD = -100 V, ID = -4.8 A, RG = 25 Ω | 3 |
| Turn-On Rise Time | tr |  | 70 | 150 | ns | VDD = -100 V, ID = -4.8 A, RG = 25 Ω | 3 |
| Turn-Off Delay Time | td(off) |  | 12 | 35 | ns | VDD = -100 V, ID = -4.8 A, RG = 25 Ω | 3 |
| Turn-Off Fall Time | tf |  | 25 | 60 | ns | VDD = -100 V, ID = -4.8 A, RG = 25 Ω | 3 |
| Total Gate Charge | Qg |  | 10 | 13 | nC | VDS = -160 V, ID = -4.8 A, VGS = -10 V | 3 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | -3.7 | A |  | 3 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM |  |  | -14.8 | A |  | 3 |
| Drain-Source Diode Forward Voltage | VSD |  |  | -5 | V | VGS = 0 V, IS = -3.7 A | 3 |
| Drain-Source Voltage | VDSS |  |  | -200 | V | TC = 25°C | 2 |
| Drain Current - Continuous | ID |  |  | -3.7 | A | TC = 25°C | 2 |
| Drain Current - Continuous | ID |  |  | -2.34 | A | TC = 100°C | 2 |
| Drain Current - Pulsed | IDM |  |  | -14.8 | A | Note 1 | 2 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V |  | 2 |
| Single Pulsed Avalanche Energy | EAS |  |  | 330 | mJ | Note 2 | 2 |
| Avalanche Current | IAR |  |  | -3.7 | A | Note 1 | 2 |
| Repetitive Avalanche Energy | EAR |  |  | 4.5 | mJ | Note 1 | 2 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | -5.5 | V/ns | Note 3 | 2 |
| Power Dissipation | PD |  |  | 2.5 | W | TA = 25°C | 2 |
| Power Dissipation | PD |  |  | 45 | W | TC = 25°C | 2 |
| Power Dissipation Derating | PD |  |  | 0.36 | W/°C | Derate above 25°C | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 2 |
| Maximum lead temperature for soldering | TL |  |  | 300 | °C | 1/8" from case for 5 seconds | 2 |
| Thermal Resistance, Junction to Case | RJC |  |  | 2.78 | oC/W |  | 2 |
| Thermal Resistance, Junction to Ambient | RJA |  |  | 110 | oC/W | minimum pad of 2 oz copper | 2 |
| Thermal Resistance, Junction to Ambient | RJA |  |  | 50 | oC/W | * 1 in2 pad of 2 oz copper | 2 |
| Breakdown Voltage Temperature Coefficient | ∆BVDSS/∆TJ |  | -0.17 |  | V/°C | ID = -250 µA, Referenced to 25°C | 3 |
| Forward Transconductance | gFS |  | 2.2 |  | S | VDS = -40 V, ID = -1.85 A | 3 |
| Gate-Source Charge | Qgs |  | 2.8 |  | nC | VDS = -160 V, ID = -4.8 A, VGS = -10 V | 3 |
| Gate-Drain Charge | Qgd |  | 5.2 |  | nC | VDS = -160 V, ID = -4.8 A, VGS = -10 V | 3 |
| Reverse Recovery Time | trr |  | 175 |  | ns | VGS = 0 V, IS = -4.8 A, dIF / dt = 100 A/µs | 3 |
| Reverse Recovery Charge | Qrr |  | 1.07 |  | µC | VGS = 0 V, IS = -4.8 A, dIF / dt = 100 A/µs | 3 |

## CAD (KiCad official)

- Symbol: `FQD5P20TM`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: DPAK (KiCad packages3D, STEP)
- 3D model files: `fqd5p20tm-etched.step` / `fqd5p20tm-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fqd5p20tm.step` / `fqd5p20tm.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://www.onsemi.com/pdf/datasheet/fqd5p20tm-d.pdf) (11 pp, sha256 `93cd7b5dd2ae640d`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fqd5p20tm-datasheet.pdf)