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FQD5P20TM

Public Made by Adom

by adom

onsemi MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FQD5P20TM

onsemi · MOSFETs · DPAK

FQD5P20TM from onsemi, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the P-channel MOSFET; gate-source voltage is rated ±30 V and threshold is -3.0 to -5.0 V.
2 D passive Drain terminal (also connected to the tab); drain-source voltage rated -200 V with continuous drain current -3.7 A at TC = 25°C.
3 S passive Source terminal of the P-channel MOSFET; maximum continuous drain-source diode forward current is -3.7 A.

Key specifications

Parameter Value
Manufacturer onsemi
Package DPAK
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -200 V VGS = 0 V, ID = -250 µA 3
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -200 V, VGS = 0 V 3
Zero Gate Voltage Drain Current IDSS -10 µA VDS = -160 V, TC = 125°C 3
Gate-Body Leakage Current, Forward IGSSF -100 nA VGS = -30 V, VDS = 0 V 3
Gate-Body Leakage Current, Reverse IGSSR 100 nA VGS = 30 V, VDS = 0 V 3
Gate Threshold Voltage VGS(th) -3 -5 V VDS = VGS, ID = -250 µA 3
Static Drain-Source On-Resistance RDS(on) 1.1 1.4 Ω VGS = -10 V, ID = -1.85 A 3
Input Capacitance Ciss 330 430 pF VDS = -25 V, VGS = 0 V, f = 1.0 MHz 3
Output Capacitance Coss 75 98 pF VDS = -25 V, VGS = 0 V, f = 1.0 MHz 3
Reverse Transfer Capacitance Crss 12 15 pF VDS = -25 V, VGS = 0 V, f = 1.0 MHz 3
Turn-On Delay Time td(on) 9 28 ns VDD = -100 V, ID = -4.8 A, RG = 25 Ω 3
Turn-On Rise Time tr 70 150 ns VDD = -100 V, ID = -4.8 A, RG = 25 Ω 3
Turn-Off Delay Time td(off) 12 35 ns VDD = -100 V, ID = -4.8 A, RG = 25 Ω 3
Turn-Off Fall Time tf 25 60 ns VDD = -100 V, ID = -4.8 A, RG = 25 Ω 3
Total Gate Charge Qg 10 13 nC VDS = -160 V, ID = -4.8 A, VGS = -10 V 3
Maximum Continuous Drain-Source Diode Forward Current IS -3.7 A 3
Maximum Pulsed Drain-Source Diode Forward Current ISM -14.8 A 3
Drain-Source Diode Forward Voltage VSD -5 V VGS = 0 V, IS = -3.7 A 3
Drain-Source Voltage VDSS -200 V TC = 25°C 2
Drain Current - Continuous ID -3.7 A TC = 25°C 2
Drain Current - Continuous ID -2.34 A TC = 100°C 2
Drain Current - Pulsed IDM -14.8 A Note 1 2
Gate-Source Voltage VGSS -30 30 V 2
Single Pulsed Avalanche Energy EAS 330 mJ Note 2 2
Avalanche Current IAR -3.7 A Note 1 2
Repetitive Avalanche Energy EAR 4.5 mJ Note 1 2
Peak Diode Recovery dv/dt dv/dt -5.5 V/ns Note 3 2
Power Dissipation PD 2.5 W TA = 25°C 2
Power Dissipation PD 45 W TC = 25°C 2
Power Dissipation Derating PD 0.36 W/°C Derate above 25°C 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Maximum lead temperature for soldering TL 300 °C 1/8" from case for 5 seconds 2
Thermal Resistance, Junction to Case RJC 2.78 oC/W 2
Thermal Resistance, Junction to Ambient RJA 110 oC/W minimum pad of 2 oz copper 2
Thermal Resistance, Junction to Ambient RJA 50 oC/W * 1 in2 pad of 2 oz copper 2
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ -0.17 V/°C ID = -250 µA, Referenced to 25°C 3
Forward Transconductance gFS 2.2 S VDS = -40 V, ID = -1.85 A 3
Gate-Source Charge Qgs 2.8 nC VDS = -160 V, ID = -4.8 A, VGS = -10 V 3
Gate-Drain Charge Qgd 5.2 nC VDS = -160 V, ID = -4.8 A, VGS = -10 V 3
Reverse Recovery Time trr 175 ns VGS = 0 V, IS = -4.8 A, dIF / dt = 100 A/µs 3
Reverse Recovery Charge Qrr 1.07 µC VGS = 0 V, IS = -4.8 A, dIF / dt = 100 A/µs 3

CAD (KiCad official)

  • Symbol: FQD5P20TM
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: DPAK (KiCad packages3D, STEP)
  • 3D model files: fqd5p20tm-etched.step / fqd5p20tm-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fqd5p20tm.step / fqd5p20tm.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (11 pp, sha256 93cd7b5dd2ae640d, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF