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FQD5N60CTM

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onsemi MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs fqd5n60ctm: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 21d ago
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fqd5n60ctm-etched.glb fqd5n60ctm: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 21d ago
fqd5n60ctm-etched.step fqd5n60ctm: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 21d ago
fqd5n60ctm-hero.glb fqd5n60ctm: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 21d ago
fqd5n60ctm-hero.overlay.json fqd5n60ctm: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 21d ago
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fqd5n60ctm.kicad_mod Publish 0.1.0 · Ray 28d ago
fqd5n60ctm.kicad_sym Publish 0.1.0 · Ray 28d ago
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fqd5n60ctm.step Publish 0.1.0 · Ray 28d ago
package.json fqd5n60ctm: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 21d ago
page.json fqd5n60ctm: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 21d ago
README.md fqd5n60ctm: specified limits as data (metadata.characteristics, 34 rows from the datasheet) · Ray 21d ago

FQD5N60CTM

onsemi · MOSFETs · DPAK

FQD5N60CTM from onsemi, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel QFET; the gate-source voltage is rated at ±30 V (VGSS), and the gate-body leakage is specified at ±100 nA maximum at VGS = ±30 V.
2 D passive Drain terminal; the device is rated for a drain-source voltage of 600 V (VDSS) and 2.8 A continuous drain current at TC = 25°C.
3 S passive Source terminal; the maximum continuous drain-source diode forward current IS is 2.8 A and the diode forward voltage VSD is 1.4 V maximum at IS = 2.8 A.

Key specifications

Parameter Value
Manufacturer onsemi
Package DPAK
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 600 V TC = 25°C unless otherwise noted 1
Drain Current - Continuous (TC = 25°C) ID 2.8 A TC = 25°C 1
Drain Current - Continuous (TC = 100°C) ID 1.8 A TC = 100°C 1
Drain Current - Pulsed (Note 1) IDM 11.2 A Note 1 (repetitive rating: pulse width limited by maximum junction temperature) 1
Gate-Source Voltage VGSS -30 30 V 1
Single Pulsed Avalanche Energy (Note 2) EAS 210 mJ Note 2 (L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, starting TJ = 25°C) 1
Avalanche Current (Note 1) IAR 2.8 A Note 1 1
Repetitive Avalanche Energy (Note 1) EAR 4.9 mJ Note 1 1
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Note 3 (ISD ≤ 4.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, starting TJ = 25°C) 1
Power Dissipation (TA = 25°C) PD 2.5 W TA = 25°C 1
Power Dissipation (TC = 25°C) PD 49 W TC = 25°C 1
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds TL 300 °C 1/8" from case for 5 seconds 1
Thermal Resistance, Junction-to-Case, Max. RθJC 2.56 °C/W 1
Thermal Resistance, Junction-to-Ambient (minimum pad of 2 oz copper), Max. RθJA 110 °C/W Minimum pad of 2 oz copper 1
Thermal Resistance, Junction-to-Ambient (1 in2 pad of 2 oz copper), Max. RθJA 50 °C/W 1 in2 pad of 2 oz copper 1
Drain-Source Breakdown Voltage BVDSS 600 V VGS = 0 V, ID = 250 μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 600 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS = 480 V, TC = 125°C 2
Gate-Body Leakage Current, Forward IGSSF 100 nA VGS = 30 V, VDS = 0 V 2
Gate-Body Leakage Current, Reverse IGSSR -100 nA VGS = -30 V, VDS = 0 V 2
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Static Drain-Source On-Resistance RDS(on) 2 2.5 Ω VGS = 10 V, ID = 1.4 A 2
Input Capacitance Ciss 515 670 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Output Capacitance Coss 55 72 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Reverse Transfer Capacitance Crss 6.5 8.5 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 2
Turn-On Delay Time td(on) 10 30 ns VDD = 300 V, ID = 4.5A, RG = 25 Ω (Note 4) 2
Turn-On Rise Time tr 42 90 ns VDD = 300 V, ID = 4.5A, RG = 25 Ω (Note 4) 2
Turn-Off Delay Time td(off) 38 85 ns VDD = 300 V, ID = 4.5A, RG = 25 Ω (Note 4) 2
Turn-Off Fall Time tf 46 100 ns VDD = 300 V, ID = 4.5A, RG = 25 Ω (Note 4) 2
Total Gate Charge Qg 15 19 nC VDS = 480 V, ID = 4.5A, VGS = 10 V (Note 4) 2
Maximum Continuous Drain-Source Diode Forward Current IS 2.8 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 11.2 A 2
Drain-Source Diode Forward Voltage VSD 1.4 V VGS = 0 V, IS = 2.8 A 2

CAD (KiCad official)

  • Symbol: FQD5N60CTM
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: DPAK (KiCad packages3D, STEP)
  • 3D model files: fqd5n60ctm-etched.step / fqd5n60ctm-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fqd5n60ctm.step / fqd5n60ctm.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (9 pp, sha256 bc1f213a9178cd5a, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF