component
FQD5N60CTM
Public Made by Adomby adom
onsemi MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFQD5N60CTM
onsemi · MOSFETs · DPAK
FQD5N60CTM from onsemi, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel QFET; the gate-source voltage is rated at ±30 V (VGSS), and the gate-body leakage is specified at ±100 nA maximum at VGS = ±30 V. |
| 2 | D | passive | Drain terminal; the device is rated for a drain-source voltage of 600 V (VDSS) and 2.8 A continuous drain current at TC = 25°C. |
| 3 | S | passive | Source terminal; the maximum continuous drain-source diode forward current IS is 2.8 A and the diode forward voltage VSD is 1.4 V maximum at IS = 2.8 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | DPAK |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 600 | V | TC = 25°C unless otherwise noted | 1 | ||
| Drain Current - Continuous (TC = 25°C) | ID | 2.8 | A | TC = 25°C | 1 | ||
| Drain Current - Continuous (TC = 100°C) | ID | 1.8 | A | TC = 100°C | 1 | ||
| Drain Current - Pulsed (Note 1) | IDM | 11.2 | A | Note 1 (repetitive rating: pulse width limited by maximum junction temperature) | 1 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Single Pulsed Avalanche Energy (Note 2) | EAS | 210 | mJ | Note 2 (L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, starting TJ = 25°C) | 1 | ||
| Avalanche Current (Note 1) | IAR | 2.8 | A | Note 1 | 1 | ||
| Repetitive Avalanche Energy (Note 1) | EAR | 4.9 | mJ | Note 1 | 1 | ||
| Peak Diode Recovery dv/dt (Note 3) | dv/dt | 4.5 | V/ns | Note 3 (ISD ≤ 4.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, starting TJ = 25°C) | 1 | ||
| Power Dissipation (TA = 25°C) | PD | 2.5 | W | TA = 25°C | 1 | ||
| Power Dissipation (TC = 25°C) | PD | 49 | W | TC = 25°C | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds | TL | 300 | °C | 1/8" from case for 5 seconds | 1 | ||
| Thermal Resistance, Junction-to-Case, Max. | RθJC | 2.56 | °C/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient (minimum pad of 2 oz copper), Max. | RθJA | 110 | °C/W | Minimum pad of 2 oz copper | 1 | ||
| Thermal Resistance, Junction-to-Ambient (1 in2 pad of 2 oz copper), Max. | RθJA | 50 | °C/W | 1 in2 pad of 2 oz copper | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 600 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 600 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS = 480 V, TC = 125°C | 2 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS = 30 V, VDS = 0 V | 2 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS = -30 V, VDS = 0 V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 2 | 2.5 | Ω | VGS = 10 V, ID = 1.4 A | 2 | |
| Input Capacitance | Ciss | 515 | 670 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 | |
| Output Capacitance | Coss | 55 | 72 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 6.5 | 8.5 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 | |
| Turn-On Delay Time | td(on) | 10 | 30 | ns | VDD = 300 V, ID = 4.5A, RG = 25 Ω (Note 4) | 2 | |
| Turn-On Rise Time | tr | 42 | 90 | ns | VDD = 300 V, ID = 4.5A, RG = 25 Ω (Note 4) | 2 | |
| Turn-Off Delay Time | td(off) | 38 | 85 | ns | VDD = 300 V, ID = 4.5A, RG = 25 Ω (Note 4) | 2 | |
| Turn-Off Fall Time | tf | 46 | 100 | ns | VDD = 300 V, ID = 4.5A, RG = 25 Ω (Note 4) | 2 | |
| Total Gate Charge | Qg | 15 | 19 | nC | VDS = 480 V, ID = 4.5A, VGS = 10 V (Note 4) | 2 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 2.8 | A | 2 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 11.2 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS = 0 V, IS = 2.8 A | 2 |
CAD (KiCad official)
- Symbol:
FQD5N60CTM - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: DPAK (KiCad packages3D, STEP)
- 3D model files:
fqd5n60ctm-etched.step/fqd5n60ctm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fqd5n60ctm.step/fqd5n60ctm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (9 pp, sha256
bc1f213a9178cd5a, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).