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fqd5n60ctm: specified limits as data (metadata.characteristics, 34 rows from the datasheet)

Ray ·77f0cb25dc ·21d ago ·parent ae52d0a
2 files changed +457−1
README.md+41
@@ -21,6 +21,47 @@ FQD5N60CTM from onsemi, in a DPAK. Pinout and pin descriptions extracted from th | Category | Triode/MOS Tube/Transistor | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDSS |  |  | 600 | V | TC = 25°C unless otherwise noted | 1 |+| Drain Current - Continuous (TC = 25°C) | ID |  |  | 2.8 | A | TC = 25°C | 1 |+| Drain Current - Continuous (TC = 100°C) | ID |  |  | 1.8 | A | TC = 100°C | 1 |+| Drain Current - Pulsed (Note 1) | IDM |  |  | 11.2 | A | Note 1 (repetitive rating: pulse width limited by maximum junction temperature) | 1 |+| Gate-Source Voltage | VGSS | -30 |  | 30 | V |  | 1 |+| Single Pulsed Avalanche Energy (Note 2) | EAS |  |  | 210 | mJ | Note 2 (L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, starting TJ = 25°C) | 1 |+| Avalanche Current (Note 1) | IAR |  |  | 2.8 | A | Note 1 | 1 |+| Repetitive Avalanche Energy (Note 1) | EAR |  |  | 4.9 | mJ | Note 1 | 1 |+| Peak Diode Recovery dv/dt (Note 3) | dv/dt |  |  | 4.5 | V/ns | Note 3 (ISD ≤ 4.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, starting TJ = 25°C) | 1 |+| Power Dissipation (TA = 25°C) | PD |  |  | 2.5 | W | TA = 25°C | 1 |+| Power Dissipation (TC = 25°C) | PD |  |  | 49 | W | TC = 25°C | 1 |+| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |+| Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds | TL |  |  | 300 | °C | 1/8" from case for 5 seconds | 1 |+| Thermal Resistance, Junction-to-Case, Max. | RθJC |  |  | 2.56 | °C/W |  | 1 |+| Thermal Resistance, Junction-to-Ambient (minimum pad of 2 oz copper), Max. | RθJA |  |  | 110 | °C/W | Minimum pad of 2 oz copper | 1 |+| Thermal Resistance, Junction-to-Ambient (1 in2 pad of 2 oz copper), Max. | RθJA |  |  | 50 | °C/W | 1 in2 pad of 2 oz copper | 1 |+| Drain-Source Breakdown Voltage | BVDSS | 600 |  |  | V | VGS = 0 V, ID = 250 μA | 2 |+| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS = 600 V, VGS = 0 V | 2 |+| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | μA | VDS = 480 V, TC = 125°C | 2 |+| Gate-Body Leakage Current, Forward | IGSSF |  |  | 100 | nA | VGS = 30 V, VDS = 0 V | 2 |+| Gate-Body Leakage Current, Reverse | IGSSR |  |  | -100 | nA | VGS = -30 V, VDS = 0 V | 2 |+| Gate Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS = VGS, ID = 250 μA | 2 |+| Static Drain-Source On-Resistance | RDS(on) |  | 2 | 2.5 | Ω | VGS = 10 V, ID = 1.4 A | 2 |+| Input Capacitance | Ciss |  | 515 | 670 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 |+| Output Capacitance | Coss |  | 55 | 72 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 |+| Reverse Transfer Capacitance | Crss |  | 6.5 | 8.5 | pF | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2 |+| Turn-On Delay Time | td(on) |  | 10 | 30 | ns | VDD = 300 V, ID = 4.5A, RG = 25 Ω (Note 4) | 2 |+| Turn-On Rise Time | tr |  | 42 | 90 | ns | VDD = 300 V, ID = 4.5A, RG = 25 Ω (Note 4) | 2 |+| Turn-Off Delay Time | td(off) |  | 38 | 85 | ns | VDD = 300 V, ID = 4.5A, RG = 25 Ω (Note 4) | 2 |+| Turn-Off Fall Time | tf |  | 46 | 100 | ns | VDD = 300 V, ID = 4.5A, RG = 25 Ω (Note 4) | 2 |+| Total Gate Charge | Qg |  | 15 | 19 | nC | VDS = 480 V, ID = 4.5A, VGS = 10 V (Note 4) | 2 |+| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | 2.8 | A |  | 2 |+| Maximum Pulsed Drain-Source Diode Forward Current | ISM |  |  | 11.2 | A |  | 2 |+| Drain-Source Diode Forward Voltage | VSD |  |  | 1.4 | V | VGS = 0 V, IS = 2.8 A | 2 |+ ## CAD (KiCad official)  - Symbol: `FQD5N60CTM`
page.json+416−1
@@ -150,6 +150,421 @@       "Package": "DPAK",       "Category": "Triode/MOS Tube/Transistor",       "Pins": "3"+    },+    "characteristics": {+      "version": 1,+      "source": "datasheet",+      "datasheet_sha256": "bc1f213a9178cd5a",+      "rows": [+        {+          "name": "Drain-Source Voltage",+          "symbol": "VDSS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 600,+          "conditions": "TC = 25°C unless otherwise noted",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Drain Current - Continuous (TC = 25°C)",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 2.8,+          "conditions": "TC = 25°C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Drain Current - Continuous (TC = 100°C)",+          "symbol": "ID",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 1.8,+          "conditions": "TC = 100°C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Drain Current - Pulsed (Note 1)",+          "symbol": "IDM",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 11.2,+          "conditions": "Note 1 (repetitive rating: pulse width limited by maximum junction temperature)",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Gate-Source Voltage",+          "symbol": "VGSS",+          "kind": "absolute_maximum",+          "unit": "V",+          "min": -30,+          "typ": null,+          "max": 30,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Single Pulsed Avalanche Energy (Note 2)",+          "symbol": "EAS",+          "kind": "absolute_maximum",+          "unit": "mJ",+          "min": null,+          "typ": null,+          "max": 210,+          "conditions": "Note 2 (L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, starting TJ = 25°C)",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Avalanche Current (Note 1)",+          "symbol": "IAR",+          "kind": "absolute_maximum",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 2.8,+          "conditions": "Note 1",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Repetitive Avalanche Energy (Note 1)",+          "symbol": "EAR",+          "kind": "absolute_maximum",+          "unit": "mJ",+          "min": null,+          "typ": null,+          "max": 4.9,+          "conditions": "Note 1",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Peak Diode Recovery dv/dt (Note 3)",+          "symbol": "dv/dt",+          "kind": "absolute_maximum",+          "unit": "V/ns",+          "min": null,+          "typ": null,+          "max": 4.5,+          "conditions": "Note 3 (ISD ≤ 4.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, starting TJ = 25°C)",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Power Dissipation (TA = 25°C)",+          "symbol": "PD",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 2.5,+          "conditions": "TA = 25°C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Power Dissipation (TC = 25°C)",+          "symbol": "PD",+          "kind": "absolute_maximum",+          "unit": "W",+          "min": null,+          "typ": null,+          "max": 49,+          "conditions": "TC = 25°C",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Operating and Storage Temperature Range",+          "symbol": "TJ, TSTG",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": -55,+          "typ": null,+          "max": 150,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Maximum lead temperature for soldering purposes, 1/8\" from case for 5 seconds",+          "symbol": "TL",+          "kind": "absolute_maximum",+          "unit": "°C",+          "min": null,+          "typ": null,+          "max": 300,+          "conditions": "1/8\" from case for 5 seconds",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Thermal Resistance, Junction-to-Case, Max.",+          "symbol": "RθJC",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 2.56,+          "conditions": "",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Thermal Resistance, Junction-to-Ambient (minimum pad of 2 oz copper), Max.",+          "symbol": "RθJA",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 110,+          "conditions": "Minimum pad of 2 oz copper",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Thermal Resistance, Junction-to-Ambient (1 in2 pad of 2 oz copper), Max.",+          "symbol": "RθJA",+          "kind": "thermal",+          "unit": "°C/W",+          "min": null,+          "typ": null,+          "max": 50,+          "conditions": "1 in2 pad of 2 oz copper",+          "source_page": 1,+          "source": "datasheet"+        },+        {+          "name": "Drain-Source Breakdown Voltage",+          "symbol": "BVDSS",+          "kind": "electrical",+          "unit": "V",+          "min": 600,+          "typ": null,+          "max": null,+          "conditions": "VGS = 0 V, ID = 250 μA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Zero Gate Voltage Drain Current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "μA",+          "min": null,+          "typ": null,+          "max": 1,+          "conditions": "VDS = 600 V, VGS = 0 V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Zero Gate Voltage Drain Current",+          "symbol": "IDSS",+          "kind": "electrical",+          "unit": "μA",+          "min": null,+          "typ": null,+          "max": 10,+          "conditions": "VDS = 480 V, TC = 125°C",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate-Body Leakage Current, Forward",+          "symbol": "IGSSF",+          "kind": "electrical",+          "unit": "nA",+          "min": null,+          "typ": null,+          "max": 100,+          "conditions": "VGS = 30 V, VDS = 0 V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate-Body Leakage Current, Reverse",+          "symbol": "IGSSR",+          "kind": "electrical",+          "unit": "nA",+          "min": null,+          "typ": null,+          "max": -100,+          "conditions": "VGS = -30 V, VDS = 0 V",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Gate Threshold Voltage",+          "symbol": "VGS(th)",+          "kind": "electrical",+          "unit": "V",+          "min": 2,+          "typ": null,+          "max": 4,+          "conditions": "VDS = VGS, ID = 250 μA",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Static Drain-Source On-Resistance",+          "symbol": "RDS(on)",+          "kind": "electrical",+          "unit": "Ω",+          "min": null,+          "typ": 2,+          "max": 2.5,+          "conditions": "VGS = 10 V, ID = 1.4 A",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Input Capacitance",+          "symbol": "Ciss",+          "kind": "electrical",+          "unit": "pF",+          "min": null,+          "typ": 515,+          "max": 670,+          "conditions": "VDS = 25 V, VGS = 0 V, f = 1.0 MHz",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Output Capacitance",+          "symbol": "Coss",+          "kind": "electrical",+          "unit": "pF",+          "min": null,+          "typ": 55,+          "max": 72,+          "conditions": "VDS = 25 V, VGS = 0 V, f = 1.0 MHz",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Reverse Transfer Capacitance",+          "symbol": "Crss",+          "kind": "electrical",+          "unit": "pF",+          "min": null,+          "typ": 6.5,+          "max": 8.5,+          "conditions": "VDS = 25 V, VGS = 0 V, f = 1.0 MHz",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Turn-On Delay Time",+          "symbol": "td(on)",+          "kind": "electrical",+          "unit": "ns",+          "min": null,+          "typ": 10,+          "max": 30,+          "conditions": "VDD = 300 V, ID = 4.5A, RG = 25 Ω (Note 4)",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Turn-On Rise Time",+          "symbol": "tr",+          "kind": "electrical",+          "unit": "ns",+          "min": null,+          "typ": 42,+          "max": 90,+          "conditions": "VDD = 300 V, ID = 4.5A, RG = 25 Ω (Note 4)",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Turn-Off Delay Time",+          "symbol": "td(off)",+          "kind": "electrical",+          "unit": "ns",+          "min": null,+          "typ": 38,+          "max": 85,+          "conditions": "VDD = 300 V, ID = 4.5A, RG = 25 Ω (Note 4)",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Turn-Off Fall Time",+          "symbol": "tf",+          "kind": "electrical",+          "unit": "ns",+          "min": null,+          "typ": 46,+          "max": 100,+          "conditions": "VDD = 300 V, ID = 4.5A, RG = 25 Ω (Note 4)",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Total Gate Charge",+          "symbol": "Qg",+          "kind": "electrical",+          "unit": "nC",+          "min": null,+          "typ": 15,+          "max": 19,+          "conditions": "VDS = 480 V, ID = 4.5A, VGS = 10 V (Note 4)",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Maximum Continuous Drain-Source Diode Forward Current",+          "symbol": "IS",+          "kind": "electrical",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 2.8,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Maximum Pulsed Drain-Source Diode Forward Current",+          "symbol": "ISM",+          "kind": "electrical",+          "unit": "A",+          "min": null,+          "typ": null,+          "max": 11.2,+          "conditions": "",+          "source_page": 2,+          "source": "datasheet"+        },+        {+          "name": "Drain-Source Diode Forward Voltage",+          "symbol": "VSD",+          "kind": "electrical",+          "unit": "V",+          "min": null,+          "typ": null,+          "max": 1.4,+          "conditions": "VGS = 0 V, IS = 2.8 A",+          "source_page": 2,+          "source": "datasheet"+        }+      ]     }   },   "variants": [],@@ -191,4 +606,4 @@   "visibility": {     "public": true   }-}\ No newline at end of file+}