# FQD20N06

**UMW** · MOSFETs · TO-252

FQD20N06 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated at ±20 V maximum and RDS(ON) specified at VGS=10 V and 4.5 V. |
| 2 | D | passive | Drain; drain-source voltage rated at 60 V and continuous drain current of 45 A (TC=25°C). |
| 3 | S | passive | Source; continuous source current (diode conduction) is rated at 45 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 60 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 45 | A | TC=25°C, TJ=175°C | 1 |
| Continuous Drain Current | ID |  |  | 35 | A | TC=125°C, TJ=175°C | 1 |
| Pulsed Drain Current | IDM |  |  | 100 | A |  | 1 |
| Continuous Source Current (Diode Conduction) | IS |  |  | 23 | A |  | 1 |
| Avalanche Current | IAS |  |  | 20 | A | L=0.1mH | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 20 | mJ | L=0.1mH | 1 |
| Maximum Power Dissipation | PD |  |  | 100 | W | TC=25°C | 1 |
| Maximum Power Dissipation | PD |  |  | 3 | W | TA=25°C | 1 |
| Operating Junction Temperature Range | TJ, TSTG | -55 |  | 175 | °C |  | 1 |
| Junction-to-Ambient, t ≤ 10s | RθJA |  | 18 | 22 | °C/W | t ≤ 10s | 2 |
| Junction-to-Ambient, Steady-State | RθJA |  | 40 | 50 | °C/W | Steady-State | 2 |
| Junction-to-Case | RθJC |  | 3.2 | 4 | °C/W |  | 2 |
| Drain-source breakdown voltage | V(BR)DSS | 60 |  |  | V | VGS=0V, ID=250µA | 3 |
| Gate Threshold Voltage | VGS(th) | 1 |  |  | V | VDS=VGS, ID=250µA | 3 |
| Gate-Body Leakage | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS=60V, VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 50 | µA | VDS=60V, VGS=0V, TJ=125°C | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 250 | µA | VDS=60V, VGS=0V, TJ=175°C | 3 |
| On-State Drain Current | ID(ON) | 50 |  |  | A | VDS=5V, VGS=10V | 3 |
| Drain-Source On-State Resistance | RDS(ON) |  |  | 25 | mΩ | VGS=10V | 1 |
| Drain-Source On-State Resistance | RDS(ON) |  |  | 30 | mΩ | VGS=4.5V | 1 |
| Source-Drain Diode Forward Voltage | VSD |  |  | 1.5 | V | IF=15A, VGS=0V | 4 |
| Source-Drain Reverse Recovery Time | trr |  | 50 | 60 | ns | IF=15A, dI/dt=100A/μs | 4 |
| Input Capacitance | Ciss |  | 670 |  | pF | VGS=0V, VDS=25V, F=1MHz | 3 |
| Output Capacitance | Coss |  | 140 |  | pF | VGS=0V, VDS=25V, F=1MHz | 3 |
| Reverse Transfer Capacitance | Crss |  | 60 |  | pF | VGS=0V, VDS=25V, F=1MHz | 3 |

## CAD (KiCad official)

- Symbol: `FQD20N06`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `fqd20n06-etched.step` / `fqd20n06-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fqd20n06.step` / `fqd20n06.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UMW datasheet](docs/fqd20n06-datasheet.pdf) (9 pp, sha256 `446094c184e2b4a4`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fqd20n06-datasheet.pdf)