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FQD20N06

Public Made by Adom

by adom

UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FQD20N06

UMW · MOSFETs · TO-252

FQD20N06 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated at ±20 V maximum and RDS(ON) specified at VGS=10 V and 4.5 V.
2 D passive Drain; drain-source voltage rated at 60 V and continuous drain current of 45 A (TC=25°C).
3 S passive Source; continuous source current (diode conduction) is rated at 45 A.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 45 A TC=25°C, TJ=175°C 1
Continuous Drain Current ID 35 A TC=125°C, TJ=175°C 1
Pulsed Drain Current IDM 100 A 1
Continuous Source Current (Diode Conduction) IS 23 A 1
Avalanche Current IAS 20 A L=0.1mH 1
Single Pulse Avalanche Energy EAS 20 mJ L=0.1mH 1
Maximum Power Dissipation PD 100 W TC=25°C 1
Maximum Power Dissipation PD 3 W TA=25°C 1
Operating Junction Temperature Range TJ, TSTG -55 175 °C 1
Junction-to-Ambient, t ≤ 10s RθJA 18 22 °C/W t ≤ 10s 2
Junction-to-Ambient, Steady-State RθJA 40 50 °C/W Steady-State 2
Junction-to-Case RθJC 3.2 4 °C/W 2
Drain-source breakdown voltage V(BR)DSS 60 V VGS=0V, ID=250µA 3
Gate Threshold Voltage VGS(th) 1 V VDS=VGS, ID=250µA 3
Gate-Body Leakage IGSS -100 100 nA VDS=0V, VGS=±20V 3
Zero Gate Voltage Drain Current IDSS 1 µA VDS=60V, VGS=0V 3
Zero Gate Voltage Drain Current IDSS 50 µA VDS=60V, VGS=0V, TJ=125°C 3
Zero Gate Voltage Drain Current IDSS 250 µA VDS=60V, VGS=0V, TJ=175°C 3
On-State Drain Current ID(ON) 50 A VDS=5V, VGS=10V 3
Drain-Source On-State Resistance RDS(ON) 25 mΩ VGS=10V 1
Drain-Source On-State Resistance RDS(ON) 30 mΩ VGS=4.5V 1
Source-Drain Diode Forward Voltage VSD 1.5 V IF=15A, VGS=0V 4
Source-Drain Reverse Recovery Time trr 50 60 ns IF=15A, dI/dt=100A/μs 4
Input Capacitance Ciss 670 pF VGS=0V, VDS=25V, F=1MHz 3
Output Capacitance Coss 140 pF VGS=0V, VDS=25V, F=1MHz 3
Reverse Transfer Capacitance Crss 60 pF VGS=0V, VDS=25V, F=1MHz 3

CAD (KiCad official)

  • Symbol: FQD20N06
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: fqd20n06-etched.step / fqd20n06-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fqd20n06.step / fqd20n06.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (9 pp, sha256 446094c184e2b4a4, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF