component
FQD19N10LTM
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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FQD19N10LTM
UMW · MOSFETs · TO-252
FQD19N10LTM from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE pin; gate-source voltage is rated at ±20 V (VGSS). |
| 2 | D | passive | DRAIN pin; drain-source voltage is rated at 100 V (VDSS) with continuous drain current of 15.6 A at TC=25°C. |
| 3 | S | passive | SOURCE pin; the gate-source voltage rating of ±20 V is referenced to this pin. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 100 | V | 1 | |||
| Drain Current Continuous | ID | 15.6 | A | TC=25°C | 1 | ||
| Drain Current Continuous | ID | 9.8 | A | TC=100°C | 1 | ||
| Drain Current Pulsed | IDM | 62.4 | A | Note 1 | 1 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 220 | mJ | Note 2 | 1 | ||
| Avalanche Current | IAR | 15.6 | A | Note 1 | 1 | ||
| Repetitive Avalanche Energy | EAR | 5 | mJ | Note 1 | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 6 | V/ns | Note 3 | 1 | ||
| Power Dissipation | PD | 2.5 | W | TA=25°C | 2 | ||
| Power Dissipation | PD | 50 | W | TC=25°C | 2 | ||
| Operating and Storage Temperature Range | TJ,TSTG | -55 | 150 | °C | 2 | ||
| Maximum Lead Temperature for Soldering | TL | 300 | °C | 1/8 in from case, 5 s | 2 | ||
| Thermal Resistance Junction to Case | RθJC | 2.5 | °C/W | 2 | |||
| Thermal Resistance Junction to Ambient | RθJA | 110 | °C/W | Minimum pad of 2-oz copper | 2 | ||
| Thermal Resistance Junction to Ambient | RθJA | 50 | °C/W | 1 in2 pad of 2-oz copper | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | ID=250µA, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=100V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VGS=80V, TC=125°C | 3 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS=20V, VDS=0V | 3 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS=-20V, VDS=0V | 3 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2 | V | VDS=VGS, ID=250µA | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 74 | 100 | mΩ | VGS=10V, ID=7.8A | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 82 | 110 | mΩ | VGS=5V, ID=7.8A | 3 | |
| Forward Transconductance | gFS | 14 | S | VDS=30V, ID=7.8A | 3 | ||
| Input Capacitance | Ciss | 670 | 870 | pF | VDS=25V, VGS=0V, f=1MHz | 3 | |
| Output Capacitance | Coss | 160 | 210 | pF | VDS=25V, VGS=0V, f=1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 35 | 45 | pF | VDS=25V, VGS=0V, f=1MHz | 3 | |
| Turn-On Delay Time | tD(on) | 14 | 38 | ns | VDD=50V, ID=19A, RG=25Ω | 3 | |
| Turn-On Rise Time | tr | 410 | 830 | ns | VDD=50V, ID=19A, RG=25Ω | 3 | |
| Turn-Off Delay Time | tD(off) | 20 | 50 | ns | VDD=50V, ID=19A, RG=25Ω | 3 | |
| Turn-Off Fall Time | tf | 140 | 290 | ns | VDD=50V, ID=19A, RG=25Ω | 3 | |
| Total Gate Charge | Qg | 14 | 18 | nC | VDS=80V, ID=19A, VGS=5V | 3 | |
| Gate to Source Charge | Qgs | 2.9 | nC | VDS=80V, ID=19A, VGS=5V | 3 | ||
| Gate to Drain Charge | Qgd | 9.2 | nC | VDS=80V, ID=19A, VGS=5V | 3 | ||
| Breakdown Voltage Temperature Coefficient | ∆BVDSS/∆TJ | 0.09 | V/°C | Referenced to 25°C, ID=250µA | 3 | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 15.6 | A | 4 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 62.4 | A | 4 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.5 | V | VGS=0V, IS=12.8A | 4 | ||
| Reverse Recovery Time | trr | 80 | ns | dIF/dt=100A/µs | 4 | ||
| Reverse Recovery Charge | Qrr | 0.195 | µC | dIF/dt=100A/µs | 4 |
CAD (KiCad official)
- Symbol:
FQD19N10LTM - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
fqd19n10ltm-etched.step/fqd19n10ltm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fqd19n10ltm.step/fqd19n10ltm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (9 pp, sha256
25730220c437bce7, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FQD19N10LTM
**UMW** · MOSFETs · TO-252
FQD19N10LTM from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE pin; gate-source voltage is rated at ±20 V (VGSS). |
| 2 | D | passive | DRAIN pin; drain-source voltage is rated at 100 V (VDSS) with continuous drain current of 15.6 A at TC=25°C. |
| 3 | S | passive | SOURCE pin; the gate-source voltage rating of ±20 V is referenced to this pin. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 100 | V | | 1 |
| Drain Current Continuous | ID | | | 15.6 | A | TC=25°C | 1 |
| Drain Current Continuous | ID | | | 9.8 | A | TC=100°C | 1 |
| Drain Current Pulsed | IDM | | | 62.4 | A | Note 1 | 1 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 220 | mJ | Note 2 | 1 |
| Avalanche Current | IAR | | | 15.6 | A | Note 1 | 1 |
| Repetitive Avalanche Energy | EAR | | | 5 | mJ | Note 1 | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | 6 | V/ns | Note 3 | 1 |
| Power Dissipation | PD | | | 2.5 | W | TA=25°C | 2 |
| Power Dissipation | PD | | | 50 | W | TC=25°C | 2 |
| Operating and Storage Temperature Range | TJ,TSTG | -55 | | 150 | °C | | 2 |
| Maximum Lead Temperature for Soldering | TL | | | 300 | °C | 1/8 in from case, 5 s | 2 |
| Thermal Resistance Junction to Case | RθJC | | | 2.5 | °C/W | | 2 |
| Thermal Resistance Junction to Ambient | RθJA | | | 110 | °C/W | Minimum pad of 2-oz copper | 2 |
| Thermal Resistance Junction to Ambient | RθJA | | | 50 | °C/W | 1 in2 pad of 2-oz copper | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 100 | | | V | ID=250µA, VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS=100V, VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | µA | VGS=80V, TC=125°C | 3 |
| Gate-Body Leakage Current, Forward | IGSSF | | | 100 | nA | VGS=20V, VDS=0V | 3 |
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | | | nA | VGS=-20V, VDS=0V | 3 |
| Gate Threshold Voltage | VGS(th) | 1 | | 2 | V | VDS=VGS, ID=250µA | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | | 74 | 100 | mΩ | VGS=10V, ID=7.8A | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | | 82 | 110 | mΩ | VGS=5V, ID=7.8A | 3 |
| Forward Transconductance | gFS | | 14 | | S | VDS=30V, ID=7.8A | 3 |
| Input Capacitance | Ciss | | 670 | 870 | pF | VDS=25V, VGS=0V, f=1MHz | 3 |
| Output Capacitance | Coss | | 160 | 210 | pF | VDS=25V, VGS=0V, f=1MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 35 | 45 | pF | VDS=25V, VGS=0V, f=1MHz | 3 |
| Turn-On Delay Time | tD(on) | | 14 | 38 | ns | VDD=50V, ID=19A, RG=25Ω | 3 |
| Turn-On Rise Time | tr | | 410 | 830 | ns | VDD=50V, ID=19A, RG=25Ω | 3 |
| Turn-Off Delay Time | tD(off) | | 20 | 50 | ns | VDD=50V, ID=19A, RG=25Ω | 3 |
| Turn-Off Fall Time | tf | | 140 | 290 | ns | VDD=50V, ID=19A, RG=25Ω | 3 |
| Total Gate Charge | Qg | | 14 | 18 | nC | VDS=80V, ID=19A, VGS=5V | 3 |
| Gate to Source Charge | Qgs | | 2.9 | | nC | VDS=80V, ID=19A, VGS=5V | 3 |
| Gate to Drain Charge | Qgd | | 9.2 | | nC | VDS=80V, ID=19A, VGS=5V | 3 |
| Breakdown Voltage Temperature Coefficient | ∆BVDSS/∆TJ | | 0.09 | | V/°C | Referenced to 25°C, ID=250µA | 3 |
| Maximum Continuous Drain-Source Diode Forward Current | IS | | | 15.6 | A | | 4 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | | | 62.4 | A | | 4 |
| Drain-Source Diode Forward Voltage | VSD | | | 1.5 | V | VGS=0V, IS=12.8A | 4 |
| Reverse Recovery Time | trr | | 80 | | ns | dIF/dt=100A/µs | 4 |
| Reverse Recovery Charge | Qrr | | 0.195 | | µC | dIF/dt=100A/µs | 4 |
## CAD (KiCad official)
- Symbol: `FQD19N10LTM`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `fqd19n10ltm-etched.step` / `fqd19n10ltm-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fqd19n10ltm.step` / `fqd19n10ltm.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [UMW datasheet](docs/fqd19n10ltm-datasheet.pdf) (9 pp, sha256 `25730220c437bce7`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fqd19n10ltm-datasheet.pdf)