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FQD19N10LTM

UMW · MOSFETs · TO-252

FQD19N10LTM from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE pin; gate-source voltage is rated at ±20 V (VGSS).
2 D passive DRAIN pin; drain-source voltage is rated at 100 V (VDSS) with continuous drain current of 15.6 A at TC=25°C.
3 S passive SOURCE pin; the gate-source voltage rating of ±20 V is referenced to this pin.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 100 V 1
Drain Current Continuous ID 15.6 A TC=25°C 1
Drain Current Continuous ID 9.8 A TC=100°C 1
Drain Current Pulsed IDM 62.4 A Note 1 1
Gate-Source Voltage VGSS -20 20 V 1
Single Pulse Avalanche Energy EAS 220 mJ Note 2 1
Avalanche Current IAR 15.6 A Note 1 1
Repetitive Avalanche Energy EAR 5 mJ Note 1 1
Peak Diode Recovery dv/dt dv/dt 6 V/ns Note 3 1
Power Dissipation PD 2.5 W TA=25°C 2
Power Dissipation PD 50 W TC=25°C 2
Operating and Storage Temperature Range TJ,TSTG -55 150 °C 2
Maximum Lead Temperature for Soldering TL 300 °C 1/8 in from case, 5 s 2
Thermal Resistance Junction to Case RθJC 2.5 °C/W 2
Thermal Resistance Junction to Ambient RθJA 110 °C/W Minimum pad of 2-oz copper 2
Thermal Resistance Junction to Ambient RθJA 50 °C/W 1 in2 pad of 2-oz copper 2
Drain-Source Breakdown Voltage BVDSS 100 V ID=250µA, VGS=0V 3
Zero Gate Voltage Drain Current IDSS 1 µA VDS=100V, VGS=0V 3
Zero Gate Voltage Drain Current IDSS 10 µA VGS=80V, TC=125°C 3
Gate-Body Leakage Current, Forward IGSSF 100 nA VGS=20V, VDS=0V 3
Gate-Body Leakage Current, Reverse IGSSR -100 nA VGS=-20V, VDS=0V 3
Gate Threshold Voltage VGS(th) 1 2 V VDS=VGS, ID=250µA 3
Static Drain-Source On-Resistance RDS(ON) 74 100 mΩ VGS=10V, ID=7.8A 3
Static Drain-Source On-Resistance RDS(ON) 82 110 mΩ VGS=5V, ID=7.8A 3
Forward Transconductance gFS 14 S VDS=30V, ID=7.8A 3
Input Capacitance Ciss 670 870 pF VDS=25V, VGS=0V, f=1MHz 3
Output Capacitance Coss 160 210 pF VDS=25V, VGS=0V, f=1MHz 3
Reverse Transfer Capacitance Crss 35 45 pF VDS=25V, VGS=0V, f=1MHz 3
Turn-On Delay Time tD(on) 14 38 ns VDD=50V, ID=19A, RG=25Ω 3
Turn-On Rise Time tr 410 830 ns VDD=50V, ID=19A, RG=25Ω 3
Turn-Off Delay Time tD(off) 20 50 ns VDD=50V, ID=19A, RG=25Ω 3
Turn-Off Fall Time tf 140 290 ns VDD=50V, ID=19A, RG=25Ω 3
Total Gate Charge Qg 14 18 nC VDS=80V, ID=19A, VGS=5V 3
Gate to Source Charge Qgs 2.9 nC VDS=80V, ID=19A, VGS=5V 3
Gate to Drain Charge Qgd 9.2 nC VDS=80V, ID=19A, VGS=5V 3
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ 0.09 V/°C Referenced to 25°C, ID=250µA 3
Maximum Continuous Drain-Source Diode Forward Current IS 15.6 A 4
Maximum Pulsed Drain-Source Diode Forward Current ISM 62.4 A 4
Drain-Source Diode Forward Voltage VSD 1.5 V VGS=0V, IS=12.8A 4
Reverse Recovery Time trr 80 ns dIF/dt=100A/µs 4
Reverse Recovery Charge Qrr 0.195 µC dIF/dt=100A/µs 4

CAD (KiCad official)

  • Symbol: FQD19N10LTM
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: fqd19n10ltm-etched.step / fqd19n10ltm-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fqd19n10ltm.step / fqd19n10ltm.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (9 pp, sha256 25730220c437bce7, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF