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FOD817A300W

Public Made by Adom

by adom

onsemi Transistor, Photovoltaic Output Optoisolators, DIP-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FOD817A300W

onsemi · Transistor, Photovoltaic Output Optoisolators · DIP-4

FOD817A300W from onsemi, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 ANODE input LED anode of the internal gallium arsenide infrared emitting diode; the FOD817 is driven through this pin with the forward current rated at 50 mA continuous (IF) and 6 V reverse voltage.
2 CATHODE input LED cathode of the internal infrared emitting diode; the emitter reverse voltage is rated at 6 V (VR), and reverse current is specified at VR = 4.0 V.
3 EMITTER passive Emitter of the output phototransistor; the emitter-collector breakdown voltage is rated at 6 V (VECO).
4 COLLECTOR passive Collector of the output phototransistor; the collector-emitter voltage is rated at 70 V (VCEO) with a continuous collector current of 50 mA (IC).

Key specifications

Parameter Value
Manufacturer onsemi
Package DIP-4
Category Optoisolators
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Storage Temperature TSTG -55 150 °C 3
Operating Temperature (FOD817) TOPR -55 110 °C 3
Junction Temperature TJ -55 125 °C 3
Lead Solder Temperature TSOL 260 °C for 10 seconds 3
Total Device Power Dissipation PTOT 200 mW 3
Continuous Forward Current (FOD817) IF 50 mA 3
Reverse Voltage VR 6 V 3
Power Dissipation PD 70 mW 3
Collector-Emitter Voltage VCEO 70 V 3
Emitter-Collector Voltage VECO 6 V 3
Continuous Collector Current IC 50 mA 3
Collector Power Dissipation PC 150 mW 3
Forward Voltage (FOD817) VF 1.2 1.4 V IF = 20 mA 4
Reverse Current (FOD817) IR 10 µA VR = 4.0 V 4
Terminal Capacitance (FOD817) Ct 30 250 pF V = 0, f = 1 kHz 4
Collector Dark Current (FOD817) ICEO 100 nA VCE = 20 V, IF = 0 4
Collector-Emitter Breakdown Voltage (FOD817) BVCEO 70 V IC = 0.1 mA, IF = 0 4
Emitter-Collector Breakdown Voltage (FOD817) BVECO 6 V IE = 10 µA, IF = 0 4
Current Transfer Ratio (FOD817A) CTR 80 160 % IF = 5 mA, VCE = 5 V 4
Collector-Emitter Saturation Voltage (FOD817) VCE(SAT) 0.1 0.2 V IF = 20 mA, IC = 1 mA 4
Response Time (Rise) tr 4 18 µs VCE = 2 V, IC = 2 mA, RL = 100 4
Response Time (Fall) tf 3 18 µs VCE = 2 V, IC = 2 mA, RL = 100 4
Input-Output Isolation Voltage VISO 5000 VACRMS f = 60 Hz, t = 1 minute, II-O 2 µA 5
Isolation Capacitance CISO 0.6 1 pf VI-O = 0, f = 1 MHz 5
Junction-to-Case Thermal Resistance JC 210 °C/W 3

CAD (KiCad official)

  • Symbol: FOD817A300W
  • Footprint: Package_DIP:DIP-4_W7.62mm
  • 3D model: DIP-4 (KiCad packages3D, STEP)
  • 3D model files: fod817a300w-etched.step / fod817a300w-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fod817a300w.step / fod817a300w.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (12 pp, sha256 8377cbaae67ea515, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF