component
FOD817A300W
Public Made by Adomby adom
onsemi Transistor, Photovoltaic Output Optoisolators, DIP-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownFOD817A300W
onsemi · Transistor, Photovoltaic Output Optoisolators · DIP-4
FOD817A300W from onsemi, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ANODE | input | LED anode of the internal gallium arsenide infrared emitting diode; the FOD817 is driven through this pin with the forward current rated at 50 mA continuous (IF) and 6 V reverse voltage. |
| 2 | CATHODE | input | LED cathode of the internal infrared emitting diode; the emitter reverse voltage is rated at 6 V (VR), and reverse current is specified at VR = 4.0 V. |
| 3 | EMITTER | passive | Emitter of the output phototransistor; the emitter-collector breakdown voltage is rated at 6 V (VECO). |
| 4 | COLLECTOR | passive | Collector of the output phototransistor; the collector-emitter voltage is rated at 70 V (VCEO) with a continuous collector current of 50 mA (IC). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | DIP-4 |
| Category | Optoisolators |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Operating Temperature (FOD817) | TOPR | -55 | 110 | °C | 3 | ||
| Junction Temperature | TJ | -55 | 125 | °C | 3 | ||
| Lead Solder Temperature | TSOL | 260 | °C | for 10 seconds | 3 | ||
| Total Device Power Dissipation | PTOT | 200 | mW | 3 | |||
| Continuous Forward Current (FOD817) | IF | 50 | mA | 3 | |||
| Reverse Voltage | VR | 6 | V | 3 | |||
| Power Dissipation | PD | 70 | mW | 3 | |||
| Collector-Emitter Voltage | VCEO | 70 | V | 3 | |||
| Emitter-Collector Voltage | VECO | 6 | V | 3 | |||
| Continuous Collector Current | IC | 50 | mA | 3 | |||
| Collector Power Dissipation | PC | 150 | mW | 3 | |||
| Forward Voltage (FOD817) | VF | 1.2 | 1.4 | V | IF = 20 mA | 4 | |
| Reverse Current (FOD817) | IR | 10 | µA | VR = 4.0 V | 4 | ||
| Terminal Capacitance (FOD817) | Ct | 30 | 250 | pF | V = 0, f = 1 kHz | 4 | |
| Collector Dark Current (FOD817) | ICEO | 100 | nA | VCE = 20 V, IF = 0 | 4 | ||
| Collector-Emitter Breakdown Voltage (FOD817) | BVCEO | 70 | V | IC = 0.1 mA, IF = 0 | 4 | ||
| Emitter-Collector Breakdown Voltage (FOD817) | BVECO | 6 | V | IE = 10 µA, IF = 0 | 4 | ||
| Current Transfer Ratio (FOD817A) | CTR | 80 | 160 | % | IF = 5 mA, VCE = 5 V | 4 | |
| Collector-Emitter Saturation Voltage (FOD817) | VCE(SAT) | 0.1 | 0.2 | V | IF = 20 mA, IC = 1 mA | 4 | |
| Response Time (Rise) | tr | 4 | 18 | µs | VCE = 2 V, IC = 2 mA, RL = 100 | 4 | |
| Response Time (Fall) | tf | 3 | 18 | µs | VCE = 2 V, IC = 2 mA, RL = 100 | 4 | |
| Input-Output Isolation Voltage | VISO | 5000 | VACRMS | f = 60 Hz, t = 1 minute, II-O 2 µA | 5 | ||
| Isolation Capacitance | CISO | 0.6 | 1 | pf | VI-O = 0, f = 1 MHz | 5 | |
| Junction-to-Case Thermal Resistance | JC | 210 | °C/W | 3 |
CAD (KiCad official)
- Symbol:
FOD817A300W - Footprint:
Package_DIP:DIP-4_W7.62mm - 3D model: DIP-4 (KiCad packages3D, STEP)
- 3D model files:
fod817a300w-etched.step/fod817a300w-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fod817a300w.step/fod817a300w.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (12 pp, sha256
8377cbaae67ea515, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).