# FMMT593

**PJSEMI** · Bipolar (BJT) · SOT-23

FMMT593 from PJSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the PNP transistor; the datasheet lists an absolute maximum emitter-base voltage VEBO of 5 V and a minimum emitter-base breakdown V(BR)EBO of 5 V. |
| 2 | Emitter | passive | Emitter terminal of the PNP transistor; the absolute maximum emitter-base voltage is 5 V (VEBO) and the maximum collector current is 1 A. |
| 3 | Collector | passive | Collector terminal of the PNP transistor; absolute maximum ratings are -VCBO 120 V, -VCEO 100 V and -IC 1 A, with 250 mW total power dissipation. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Collector Base Cutoff Current | -ICBO |  |  | 0.1 | μA | at -VCB = 100 V | 2 |
| Emitter Base Cutoff Current | -IEBO |  |  | 0.1 | μA | at -VEB = 4 V | 2 |
| Collector Base Breakdown Voltage | -V(BR)CBO | 120 |  |  | V | at -IC = 100 μA | 2 |
| Collector Emitter Breakdown Voltage | -V(BR)CEO | 100 |  |  | V | at -IC = 1 mA | 2 |
| Emitter Base Breakdown Voltage | -V(BR)EBO | 5 |  |  | V | at -IE = 100 μA | 2 |
| Collector Emitter Saturation Voltage | -VCE(sat) |  |  | 0.2 | V | at -IC = 250 mA, -IB = 25 mA; at -IC = 500 mA, -IB = 50 mA | 2 |
| Base Emitter Saturation Voltage | -VBE(sat) |  |  | 1.1 | V | at -IC = 500m A, -IC = 50 mA | 2 |
| Base Emitter Voltage | -VBE(on) |  |  | 1 | V | at -VCE = 5 V, -IB = 1 mA | 2 |
| Transition Frequency | FT | 150 |  |  | MHz | at -VCE = 10 V, -IC = 50 mA, f = 100 MHz | 2 |
| Collector Output Capacitance | Cob |  |  | 5 | pF | at -VCB = 10 V, f = 1MHz | 2 |
| Collector Base Cutoff Current (ICES) | -ICES |  |  | 0.1 | μA | at -VCE = 100 V | 2 |
| DC Current Gain | hFE | 100 |  |  | - | at -VCE = 5 V, -IC = 1 mA | 2 |
| DC Current Gain | hFE | 100 |  | 300 | - | at -VCE = 5 V, -IC = 0.5 A | 2 |
| DC Current Gain | hFE | 50 |  |  | - | at -VCE = 5 V, -IC = 1 A | 2 |
| Collector Base Voltage | -VCBO |  |  | 120 | V |  | 1 |
| Collector Emitter Voltage | -VCEO |  |  | 100 | V |  | 1 |
| Emitter Base Voltage | -VEBO |  |  | 5 | V |  | 1 |
| Collector Current | -IC |  |  | 1 | A |  | 1 |
| Power Dissipation | PD |  |  | 250 | mW |  | 1 |
| Junction Temperature | TJ |  |  | 150 | ℃ |  | 1 |

## CAD (KiCad official)

- Symbol: `FMMT593`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `fmmt593-etched.step` / `fmmt593-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fmmt593.step` / `fmmt593.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [PJSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588916945731129344) (4 pp, sha256 `c54698d50e4cc8dc`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fmmt593-datasheet.pdf)