component

FMMT593

Public Made by Adom

by adom

PJSEMI Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 1mo ago
viewers fmmt593: viewers · Ray 1mo ago
fmmt593-etched.glb fmmt593: factory component page (tier=lcsc) · Ray 1mo ago
fmmt593-etched.step fmmt593: factory component page (tier=lcsc) · Ray 1mo ago
fmmt593-hero.glb fmmt593: hero GLB from the etched model (keeps the MPN mark) · Ray 1mo ago
fmmt593-hero.overlay.json Publish 0.1.0 · Ray 1mo ago
fmmt593.glb Publish 0.1.0 · Ray 1mo ago
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fmmt593.step Publish 0.1.0 · Ray 1mo ago
package.json Publish 0.1.0 · Ray 1mo ago
page.json fmmt593: specified limits as data (metadata.characteristics, 21 rows from the datasheet) · Ray 23d ago
README.md fmmt593: specified limits as data (metadata.characteristics, 21 rows from the datasheet) · Ray 23d ago

FMMT593

PJSEMI · Bipolar (BJT) · SOT-23

FMMT593 from PJSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base terminal of the PNP transistor; the datasheet lists an absolute maximum emitter-base voltage VEBO of 5 V and a minimum emitter-base breakdown V(BR)EBO of 5 V.
2 Emitter passive Emitter terminal of the PNP transistor; the absolute maximum emitter-base voltage is 5 V (VEBO) and the maximum collector current is 1 A.
3 Collector passive Collector terminal of the PNP transistor; absolute maximum ratings are -VCBO 120 V, -VCEO 100 V and -IC 1 A, with 250 mW total power dissipation.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Storage Temperature Range TSTG -55 150 ℃ 1
Collector Base Cutoff Current -ICBO 0.1 μA at -VCB = 100 V 2
Emitter Base Cutoff Current -IEBO 0.1 μA at -VEB = 4 V 2
Collector Base Breakdown Voltage -V(BR)CBO 120 V at -IC = 100 μA 2
Collector Emitter Breakdown Voltage -V(BR)CEO 100 V at -IC = 1 mA 2
Emitter Base Breakdown Voltage -V(BR)EBO 5 V at -IE = 100 μA 2
Collector Emitter Saturation Voltage -VCE(sat) 0.2 V at -IC = 250 mA, -IB = 25 mA; at -IC = 500 mA, -IB = 50 mA 2
Base Emitter Saturation Voltage -VBE(sat) 1.1 V at -IC = 500m A, -IC = 50 mA 2
Base Emitter Voltage -VBE(on) 1 V at -VCE = 5 V, -IB = 1 mA 2
Transition Frequency FT 150 MHz at -VCE = 10 V, -IC = 50 mA, f = 100 MHz 2
Collector Output Capacitance Cob 5 pF at -VCB = 10 V, f = 1MHz 2
Collector Base Cutoff Current (ICES) -ICES 0.1 μA at -VCE = 100 V 2
DC Current Gain hFE 100 - at -VCE = 5 V, -IC = 1 mA 2
DC Current Gain hFE 100 300 - at -VCE = 5 V, -IC = 0.5 A 2
DC Current Gain hFE 50 - at -VCE = 5 V, -IC = 1 A 2
Collector Base Voltage -VCBO 120 V 1
Collector Emitter Voltage -VCEO 100 V 1
Emitter Base Voltage -VEBO 5 V 1
Collector Current -IC 1 A 1
Power Dissipation PD 250 mW 1
Junction Temperature TJ 150 ℃ 1

CAD (KiCad official)

  • Symbol: FMMT593
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: fmmt593-etched.step / fmmt593-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fmmt593.step / fmmt593.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (4 pp, sha256 c54698d50e4cc8dc, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF