# FMD5N50E5

**Fortior Tech** · MOSFETs · TO-252

FMD5N50E5 from Fortior Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage rated ±30 V, threshold VGS(TH) 3.0 to 5.0 V at VDS = VGS, ID = 250 µA. |
| 2 | D | passive | Drain; drain-to-source voltage rated 500 V with 5 A continuous drain current (20 A pulsed), RDS(ON) typ 1.25 Ω at VGS = 10 V. |
| 3 | S | passive | Source; carries up to 5 A continuous body-diode current (IS) and 20 A pulsed (ISM). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Fortior Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS |  |  | 500 | V | Tc=25°C unless otherwise specified | 1 |
| Continuous Drain Current | ID |  |  | 5 | A | Tc=25°C unless otherwise specified | 1 |
| Gate-to-Source Voltage | VGS | -30 |  | 30 | V |  | 1 |
| Avalanche Current | IAR |  |  | 2.5 | A |  | 1 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 5 | V/ns | ISD=5A, di/dt≤100A/µs, VDD≤BVDSS, Start TJ=25℃ (footnote a3) | 1 |
| Operating Junction and Storage Temperature Range | TJ,Tstg | -55 |  | 150 | °C |  | 1 |
| Drain to Source Breakdown Voltage | VDSS | 500 |  |  | V | VGS=0V, ID=250µA | 2 |
| Drain to Source Leakage Current | I |  |  | 1 | µA | VDS=500V, VGS=0V, Ta=25°C | 2 |
| Drain to Source Leakage Current | I |  |  | 10 | µA | VDS=400V, VGS=0V, Ta=125°C | 2 |
| Gate to Source Forward Leakage Current | IGSS(F) |  |  | 100 | nA | VGS=30V | 2 |
| Gate to Source Reverse Leakage Current | IGSS(R) |  |  | -100 | nA | VGS=-30V | 2 |
| Drain-to-Source On-Resistance | RDS(ON) |  | 1.25 | 1.5 | Ω | VGS=10V, ID=2.5A; pulse width tp≤380µs, δ≤2% | 2 |
| Gate Threshold Voltage | VGS(TH) | 3 |  | 5 | V | VDS=VGS, ID=250µA | 2 |
| Continuous Source Current (Body Diode) | IS |  |  | 5 | A |  | 3 |
| Maximum Pulsed Current (Body Diode) | ISM |  |  | 20 | A |  | 3 |
| Diode Forward Voltage | VSD |  |  | 1.5 | V | IS=5.0A, VGS=0V | 3 |
| Junction-to-Case Thermal Resistance | RθJC |  | 1.67 |  | ℃/W |  | 3 |
| Junction-to-Ambient Thermal Resistance | RθJA |  | 62.5 |  | ℃/W |  | 3 |

## CAD (KiCad official)

- Symbol: `FMD5N50E5`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `fmd5n50e5-etched.step` / `fmd5n50e5-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fmd5n50e5.step` / `fmd5n50e5.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Fortior Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588911655413010432) (10 pp, sha256 `14c03d989d839ec5`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fmd5n50e5-datasheet.pdf)