component
FMD5N50E5
Public Made by Adomby adom
Fortior Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| fmd5n50e5-etched.glb | 23d ago |
| fmd5n50e5-etched.step | 23d ago |
| fmd5n50e5-hero.glb | 23d ago |
| fmd5n50e5-hero.overlay.json | 23d ago |
| fmd5n50e5.glb | 23d ago |
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| fmd5n50e5.lbr | 23d ago |
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| package.json | 23d ago |
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| README.md | 23d ago |
FMD5N50E5
Fortior Tech · MOSFETs · TO-252
FMD5N50E5 from Fortior Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage rated ±30 V, threshold VGS(TH) 3.0 to 5.0 V at VDS = VGS, ID = 250 µA. |
| 2 | D | passive | Drain; drain-to-source voltage rated 500 V with 5 A continuous drain current (20 A pulsed), RDS(ON) typ 1.25 Ω at VGS = 10 V. |
| 3 | S | passive | Source; carries up to 5 A continuous body-diode current (IS) and 20 A pulsed (ISM). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Fortior Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 500 | V | Tc=25°C unless otherwise specified | 1 | ||
| Continuous Drain Current | ID | 5 | A | Tc=25°C unless otherwise specified | 1 | ||
| Gate-to-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Avalanche Current | IAR | 2.5 | A | 1 | |||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | ISD=5A, di/dt≤100A/µs, VDD≤BVDSS, Start TJ=25℃ (footnote a3) | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,Tstg | -55 | 150 | °C | 1 | ||
| Drain to Source Breakdown Voltage | VDSS | 500 | V | VGS=0V, ID=250µA | 2 | ||
| Drain to Source Leakage Current | I | 1 | µA | VDS=500V, VGS=0V, Ta=25°C | 2 | ||
| Drain to Source Leakage Current | I | 10 | µA | VDS=400V, VGS=0V, Ta=125°C | 2 | ||
| Gate to Source Forward Leakage Current | IGSS(F) | 100 | nA | VGS=30V | 2 | ||
| Gate to Source Reverse Leakage Current | IGSS(R) | -100 | nA | VGS=-30V | 2 | ||
| Drain-to-Source On-Resistance | RDS(ON) | 1.25 | 1.5 | Ω | VGS=10V, ID=2.5A; pulse width tp≤380µs, δ≤2% | 2 | |
| Gate Threshold Voltage | VGS(TH) | 3 | 5 | V | VDS=VGS, ID=250µA | 2 | |
| Continuous Source Current (Body Diode) | IS | 5 | A | 3 | |||
| Maximum Pulsed Current (Body Diode) | ISM | 20 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.5 | V | IS=5.0A, VGS=0V | 3 | ||
| Junction-to-Case Thermal Resistance | RθJC | 1.67 | ℃/W | 3 | |||
| Junction-to-Ambient Thermal Resistance | RθJA | 62.5 | ℃/W | 3 |
CAD (KiCad official)
- Symbol:
FMD5N50E5 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
fmd5n50e5-etched.step/fmd5n50e5-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fmd5n50e5.step/fmd5n50e5.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Fortior Tech datasheet (10 pp, sha256
14c03d989d839ec5, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).