# FJP13007H1TU-F080-HXY

**HXY MOSFET** · Bipolar (BJT) · TO-220

FJP13007H1TU-F080-HXY from HXY MOSFET, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN device; the datasheet gives VEBO of 9 V and specifies VBE(sat) of 1.2 V at IC=2 A with IB=0.4 A. |
| 2 | COLLECTOR | passive | Collector terminal rated for IC of 8 A, with VCBO of 700 V and VCEO of 400 V; the collector is also the tab on the TO-220 package. |
| 3 | EMITTER | passive | Emitter terminal, the reference point for the 9 V emitter-base breakdown rating (VEBO). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 700 |  |  | V | IC= 1mA, IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | 400 |  |  | V | IC=10mA, IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | 9 |  |  | V | IE=1mA, IC=0 | 1 |
| Collector cut-off current | ICBO |  |  | 100 | μA | VCB=700V, IE=0 | 1 |
| Emitter cut-off current | IEBO |  |  | 100 | μA | VEB=9V, IC=0 | 1 |
| DC current gain | hFE(1) | 10 |  |  |  | VCE=5V, IC=2A | 1 |
| DC current gain | hFE(2) | 5 |  |  |  | VCE=5V, IC=8A | 1 |
| Collector-emitter saturation voltage | VCE(sat)1 |  |  | 1 | V | IC=2A, IB=0.4A | 1 |
| Collector-emitter saturation voltage | VCE(sat)2 |  |  | 2 | V | IC=5A, IB=1A | 1 |
| Collector-emitter saturation voltage | VCE(sat)3 |  |  | 3 | V | IC=8A, IB=2A | 1 |
| Base-emitter saturation voltage | VBE(sat)1 |  |  | 1.2 | V | IC=2A, IB=0.4A | 1 |
| Base-emitter saturation voltage | VBE(sat)2 |  |  | 1.6 | V | IC=5A, IB=1A | 1 |
| Storage time | tS | 3 |  | 6 | μs | IC=500mA (UI9600) | 1 |
| Fall time | tf |  |  | 0.5 | μs | IC=500mA (UI9600) | 1 |
| Transition frequency | fT | 4 |  |  | MHz | VCE=10V, IC=0.5A, f=1MHz | 1 |
| Collector-Base Voltage | VCBO |  |  | 700 | V |  | 1 |
| Collector-Emitter Voltage | VCEO |  |  | 400 | V |  | 1 |
| Emitter-Base Voltage | VEBO |  |  | 9 | V |  | 1 |
| Collector Current | IC |  |  | 8 | A |  | 1 |
| Collector Power Dissipation | PC |  |  | 2 | W |  | 1 |
| Collector Power Dissipation | PC |  |  | 80 | W | TC=25°C | 1 |
| Operation Junction and Storage Temperature Range | Tj,Tstg | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance from Junction to Case | RθJC |  |  | 1.56 | °C/W |  | 1 |

## CAD (KiCad official)

- Symbol: `FJP13007H1TU-F080-HXY`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `fjp13007h1tu-f080-hxy-etched.step` / `fjp13007h1tu-f080-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fjp13007h1tu-f080-hxy.step` / `fjp13007h1tu-f080-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/fjp13007h1tu-f080-hxy-datasheet.pdf) (4 pp, sha256 `1c754cdb70e18a7b`, retrieved 2026-10-24, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fjp13007h1tu-f080-hxy-datasheet.pdf)