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FJP13007H1TU-F080-HXY

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HXY MOSFET Bipolar (BJT), TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FJP13007H1TU-F080-HXY

HXY MOSFET · Bipolar (BJT) · TO-220

FJP13007H1TU-F080-HXY from HXY MOSFET, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN device; the datasheet gives VEBO of 9 V and specifies VBE(sat) of 1.2 V at IC=2 A with IB=0.4 A.
2 COLLECTOR passive Collector terminal rated for IC of 8 A, with VCBO of 700 V and VCEO of 400 V; the collector is also the tab on the TO-220 package.
3 EMITTER passive Emitter terminal, the reference point for the 9 V emitter-base breakdown rating (VEBO).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 700 V IC= 1mA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO 400 V IC=10mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO 9 V IE=1mA, IC=0 1
Collector cut-off current ICBO 100 μA VCB=700V, IE=0 1
Emitter cut-off current IEBO 100 μA VEB=9V, IC=0 1
DC current gain hFE(1) 10 VCE=5V, IC=2A 1
DC current gain hFE(2) 5 VCE=5V, IC=8A 1
Collector-emitter saturation voltage VCE(sat)1 1 V IC=2A, IB=0.4A 1
Collector-emitter saturation voltage VCE(sat)2 2 V IC=5A, IB=1A 1
Collector-emitter saturation voltage VCE(sat)3 3 V IC=8A, IB=2A 1
Base-emitter saturation voltage VBE(sat)1 1.2 V IC=2A, IB=0.4A 1
Base-emitter saturation voltage VBE(sat)2 1.6 V IC=5A, IB=1A 1
Storage time tS 3 6 μs IC=500mA (UI9600) 1
Fall time tf 0.5 μs IC=500mA (UI9600) 1
Transition frequency fT 4 MHz VCE=10V, IC=0.5A, f=1MHz 1
Collector-Base Voltage VCBO 700 V 1
Collector-Emitter Voltage VCEO 400 V 1
Emitter-Base Voltage VEBO 9 V 1
Collector Current IC 8 A 1
Collector Power Dissipation PC 2 W 1
Collector Power Dissipation PC 80 W TC=25°C 1
Operation Junction and Storage Temperature Range Tj,Tstg -55 150 °C 1
Thermal Resistance from Junction to Case RθJC 1.56 °C/W 1

CAD (KiCad official)

  • Symbol: FJP13007H1TU-F080-HXY
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: fjp13007h1tu-f080-hxy-etched.step / fjp13007h1tu-f080-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fjp13007h1tu-f080-hxy.step / fjp13007h1tu-f080-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 1c754cdb70e18a7b, retrieved 2026-10-24, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF