# FHTA8550Y-ME

**FH Guangdong Fenghua Advanced Tech** · Bipolar (BJT) · SOT-23

FHTA8550Y-ME from FH Guangdong Fenghua Advanced Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the datasheet rates base current at -160 mAdc maximum. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; the emitter-base voltage is rated at -5.0 Vdc. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; rated at -40 Vdc collector-base, -25 Vdc collector-emitter, and -0.5 Adc continuous collector current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | FH Guangdong Fenghua Advanced Tech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Cutoff Current | ICBO |  |  | -0.1 | µA | VCB=-30V,IE=0 | 3 |
| Emitter Cutoff Current | IEBO |  |  | -0.1 | µA | VEB=-5V,IC=0 | 3 |
| Collector-Base Breakdown Voltage | V(BR)CBO | -40 |  |  | V | IC=-100µA | 3 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -25 |  |  | V | IC=-10mA | 3 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 |  |  | V | IE=-100µA | 3 |
| DC Current Gain (Y grade bin) | hFE | 160 |  | 300 |  |  | 5 |
| DC Current Gain hFE(1) | hFE (1) | 85 |  | 360 |  | VCE=-1V,IC=-100mA | 3 |
| DC Current Gain hFE(2) | hFE (2) | 40 |  |  |  | VCE=-1V,IC=-500mA | 3 |
| Collector-Emitter Saturation Voltage | V CE(sat) |  |  | -0.6 | V | IC=-500mA,IB=-50mA | 3 |
| Base-Emitter Voltage | VBE |  | -0.8 | -1 | V | VCE=-1V,IC=-10mA | 3 |
| Transition Frequency | fT | 100 | 120 |  | MHz | VCE=-5V,IC=-10mA | 3 |
| Collector Output Capacitance | Cob |  | 13 | 30 | pF | VCB=-10V,IE=0,f=1MHz | 3 |
| Collector-Base Voltage | VCBO |  |  | -40 | Vdc | TC=25°C unless otherwise noted | 2 |
| Collector-Emitter Voltage | VCEO |  |  | -25 | Vdc | TC=25°C unless otherwise noted | 2 |
| Emitter-Base Voltage | VEBO |  |  | -5 | Vdc | TC=25°C unless otherwise noted | 2 |
| Collector Current-Continuous | Ic |  |  | -0.5 | Adc | TC=25°C unless otherwise noted | 2 |
| Base Current | IB |  |  | -160 | mAdc | TC=25°C unless otherwise noted | 2 |
| Collector Power Dissipation | PC |  |  | 300 | mW | TC=25°C unless otherwise noted | 2 |
| Junction Temperature | Tj |  |  | 150 | ℃ | TC=25°C unless otherwise noted | 2 |
| Storage Temperature Range | Tstg | -55 |  | 150 | ℃ | TC=25°C unless otherwise noted | 2 |

## CAD (KiCad official)

- Symbol: `FHTA8550Y-ME`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `fhta8550y-me-etched.step` / `fhta8550y-me-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fhta8550y-me.step` / `fhta8550y-me.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [FH Guangdong Fenghua Advanced Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588911098393743360) (6 pp, sha256 `b8000feb7f132564`, retrieved 2026-10-18, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fhta8550y-me-datasheet.pdf)