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FHTA8550Y-ME

FH Guangdong Fenghua Advanced Tech · Bipolar (BJT) · SOT-23

FHTA8550Y-ME from FH Guangdong Fenghua Advanced Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; the datasheet rates base current at -160 mAdc maximum.
2 EMITTER passive Emitter terminal of the PNP transistor; the emitter-base voltage is rated at -5.0 Vdc.
3 COLLECTOR passive Collector terminal of the PNP transistor; rated at -40 Vdc collector-base, -25 Vdc collector-emitter, and -0.5 Adc continuous collector current.

Key specifications

Parameter Value
Manufacturer FH Guangdong Fenghua Advanced Tech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector Cutoff Current ICBO -0.1 µA VCB=-30V,IE=0 3
Emitter Cutoff Current IEBO -0.1 µA VEB=-5V,IC=0 3
Collector-Base Breakdown Voltage V(BR)CBO -40 V IC=-100µA 3
Collector-Emitter Breakdown Voltage V(BR)CEO -25 V IC=-10mA 3
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA 3
DC Current Gain (Y grade bin) hFE 160 300 5
DC Current Gain hFE(1) hFE (1) 85 360 VCE=-1V,IC=-100mA 3
DC Current Gain hFE(2) hFE (2) 40 VCE=-1V,IC=-500mA 3
Collector-Emitter Saturation Voltage V CE(sat) -0.6 V IC=-500mA,IB=-50mA 3
Base-Emitter Voltage VBE -0.8 -1 V VCE=-1V,IC=-10mA 3
Transition Frequency fT 100 120 MHz VCE=-5V,IC=-10mA 3
Collector Output Capacitance Cob 13 30 pF VCB=-10V,IE=0,f=1MHz 3
Collector-Base Voltage VCBO -40 Vdc TC=25°C unless otherwise noted 2
Collector-Emitter Voltage VCEO -25 Vdc TC=25°C unless otherwise noted 2
Emitter-Base Voltage VEBO -5 Vdc TC=25°C unless otherwise noted 2
Collector Current-Continuous Ic -0.5 Adc TC=25°C unless otherwise noted 2
Base Current IB -160 mAdc TC=25°C unless otherwise noted 2
Collector Power Dissipation PC 300 mW TC=25°C unless otherwise noted 2
Junction Temperature Tj 150 ℃ TC=25°C unless otherwise noted 2
Storage Temperature Range Tstg -55 150 ℃ TC=25°C unless otherwise noted 2

CAD (KiCad official)

  • Symbol: FHTA8550Y-ME
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: fhta8550y-me-etched.step / fhta8550y-me-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fhta8550y-me.step / fhta8550y-me.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FH Guangdong Fenghua Advanced Tech datasheet (6 pp, sha256 b8000feb7f132564, retrieved 2026-10-18, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF