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FHT9013T-ME
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FH Guangdong Fenghua Advanced Tech Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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FHT9013T-ME
FH Guangdong Fenghua Advanced Tech · Bipolar (BJT) · SOT-23
FHT9013T-ME from FH Guangdong Fenghua Advanced Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; base current is rated at 100 mA maximum (IB). |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor; emitter-base voltage is rated at 6.0 V maximum (VEBO). |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; rated at 40 V VCBO, 30 V VCEO, 500 mA continuous collector current and 300 mW collector power dissipation. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | FH Guangdong Fenghua Advanced Tech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 40 | V | TC=25°C unless otherwise noted | 2 | ||
| Collector-Emitter Voltage | VCEO | 30 | V | TC=25°C unless otherwise noted | 2 | ||
| Emitter-Base Voltage | VEBO | 6 | V | TC=25°C unless otherwise noted | 2 | ||
| Collector Current, Continuous | Ic | 500 | mA | TC=25°C unless otherwise noted | 2 | ||
| Base Current | IB | 100 | mA | TC=25°C unless otherwise noted | 2 | ||
| Collector Power Dissipation | PC | 300 | mW | TC=25°C unless otherwise noted | 2 | ||
| Junction Temperature | Tj | 150 | ℃ | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 2 | ||
| Collector Cutoff Current | ICBO | 0.1 | µA | VCB=35V,IE=0 | 3 | ||
| Emitter Cut-off Current | IEBO | 0.1 | µA | VEB=5V,IC=0 | 3 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 40 | V | IC=100µA | 3 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 30 | V | IC=1.0mA | 3 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | V | IE=100µA | 3 | ||
| DC Current Gain (Rank T) | hFE (1) | 160 | 300 | , | VCE=1V,IC=50mA; Rank T hFE range 160~300 | 3 | |
| DC Current Gain | hFE (2) | 25 | , | VCE=6V,IC=400mA | 3 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.6 | V | IC=500mA,IB=50mA | 3 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 1.2 | V | IC=500mA,IB=50mA | 3 | ||
| Base-Emitter Voltage | VBE | 0.8 | 1 | V | VCE=1V,IC=100mA | 3 | |
| Transition Frequency | fT | 150 | 300 | MHz | VCE=-6V,IC=-20mA | 3 | |
| Collector Output Capacitance | Cob | 7 | 10 | pF | VCB=-6V,IE=0,f=1MHz | 3 |
CAD (KiCad official)
- Symbol:
FHT9013T-ME - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
fht9013t-me-etched.step/fht9013t-me-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fht9013t-me.step/fht9013t-me.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: FH Guangdong Fenghua Advanced Tech datasheet (6 pp, sha256
704cfe0e6341f010, retrieved 2026-10-18, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# FHT9013T-ME
**FH Guangdong Fenghua Advanced Tech** · Bipolar (BJT) · SOT-23
FHT9013T-ME from FH Guangdong Fenghua Advanced Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; base current is rated at 100 mA maximum (IB). |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor; emitter-base voltage is rated at 6.0 V maximum (VEBO). |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; rated at 40 V VCBO, 30 V VCEO, 500 mA continuous collector current and 300 mW collector power dissipation. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | FH Guangdong Fenghua Advanced Tech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | | | 40 | V | TC=25°C unless otherwise noted | 2 |
| Collector-Emitter Voltage | VCEO | | | 30 | V | TC=25°C unless otherwise noted | 2 |
| Emitter-Base Voltage | VEBO | | | 6 | V | TC=25°C unless otherwise noted | 2 |
| Collector Current, Continuous | Ic | | | 500 | mA | TC=25°C unless otherwise noted | 2 |
| Base Current | IB | | | 100 | mA | TC=25°C unless otherwise noted | 2 |
| Collector Power Dissipation | PC | | | 300 | mW | TC=25°C unless otherwise noted | 2 |
| Junction Temperature | Tj | | | 150 | ℃ | | 2 |
| Storage Temperature Range | Tstg | -55 | | 150 | ℃ | | 2 |
| Collector Cutoff Current | ICBO | | | 0.1 | µA | VCB=35V,IE=0 | 3 |
| Emitter Cut-off Current | IEBO | | | 0.1 | µA | VEB=5V,IC=0 | 3 |
| Collector-Base Breakdown Voltage | V(BR)CBO | 40 | | | V | IC=100µA | 3 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 30 | | | V | IC=1.0mA | 3 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | | | V | IE=100µA | 3 |
| DC Current Gain (Rank T) | hFE (1) | 160 | | 300 |, | VCE=1V,IC=50mA; Rank T hFE range 160~300 | 3 |
| DC Current Gain | hFE (2) | 25 | | |, | VCE=6V,IC=400mA | 3 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | 0.6 | V | IC=500mA,IB=50mA | 3 |
| Base-Emitter Saturation Voltage | VBE(sat) | | | 1.2 | V | IC=500mA,IB=50mA | 3 |
| Base-Emitter Voltage | VBE | | 0.8 | 1 | V | VCE=1V,IC=100mA | 3 |
| Transition Frequency | fT | 150 | 300 | | MHz | VCE=-6V,IC=-20mA | 3 |
| Collector Output Capacitance | Cob | | 7 | 10 | pF | VCB=-6V,IE=0,f=1MHz | 3 |
## CAD (KiCad official)
- Symbol: `FHT9013T-ME`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `fht9013t-me-etched.step` / `fht9013t-me-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fht9013t-me.step` / `fht9013t-me.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [FH Guangdong Fenghua Advanced Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590917942823362560) (6 pp, sha256 `704cfe0e6341f010`, retrieved 2026-10-18, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/fht9013t-me-datasheet.pdf)