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FHT9013T-ME

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FH Guangdong Fenghua Advanced Tech Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FHT9013T-ME

FH Guangdong Fenghua Advanced Tech · Bipolar (BJT) · SOT-23

FHT9013T-ME from FH Guangdong Fenghua Advanced Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN transistor; base current is rated at 100 mA maximum (IB).
2 EMITTER passive Emitter terminal of the NPN transistor; emitter-base voltage is rated at 6.0 V maximum (VEBO).
3 COLLECTOR passive Collector terminal of the NPN transistor; rated at 40 V VCBO, 30 V VCEO, 500 mA continuous collector current and 300 mW collector power dissipation.

Key specifications

Parameter Value
Manufacturer FH Guangdong Fenghua Advanced Tech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 40 V TC=25°C unless otherwise noted 2
Collector-Emitter Voltage VCEO 30 V TC=25°C unless otherwise noted 2
Emitter-Base Voltage VEBO 6 V TC=25°C unless otherwise noted 2
Collector Current, Continuous Ic 500 mA TC=25°C unless otherwise noted 2
Base Current IB 100 mA TC=25°C unless otherwise noted 2
Collector Power Dissipation PC 300 mW TC=25°C unless otherwise noted 2
Junction Temperature Tj 150 ℃ 2
Storage Temperature Range Tstg -55 150 ℃ 2
Collector Cutoff Current ICBO 0.1 µA VCB=35V,IE=0 3
Emitter Cut-off Current IEBO 0.1 µA VEB=5V,IC=0 3
Collector-Base Breakdown Voltage V(BR)CBO 40 V IC=100µA 3
Collector-Emitter Breakdown Voltage V(BR)CEO 30 V IC=1.0mA 3
Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=100µA 3
DC Current Gain (Rank T) hFE (1) 160 300 , VCE=1V,IC=50mA; Rank T hFE range 160~300 3
DC Current Gain hFE (2) 25 , VCE=6V,IC=400mA 3
Collector-Emitter Saturation Voltage VCE(sat) 0.6 V IC=500mA,IB=50mA 3
Base-Emitter Saturation Voltage VBE(sat) 1.2 V IC=500mA,IB=50mA 3
Base-Emitter Voltage VBE 0.8 1 V VCE=1V,IC=100mA 3
Transition Frequency fT 150 300 MHz VCE=-6V,IC=-20mA 3
Collector Output Capacitance Cob 7 10 pF VCB=-6V,IE=0,f=1MHz 3

CAD (KiCad official)

  • Symbol: FHT9013T-ME
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: fht9013t-me-etched.step / fht9013t-me-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fht9013t-me.step / fht9013t-me.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: FH Guangdong Fenghua Advanced Tech datasheet (6 pp, sha256 704cfe0e6341f010, retrieved 2026-10-18, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF