# FH3415G+

**XIN FEI HONG** · MOSFETs · SOT-23

FH3415G+ from XIN FEI HONG, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±10 V, ESD protected (HBM Class 3A, 4000~8000V), and the device operates with gate voltages as low as 1.8V. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous drain current is -4.5 A and diode forward current is -4 A. |
| 3 | D | passive | Drain of the P-channel MOSFET; drain-source voltage rating is -20 V, continuous drain current -4.5 A, pulsed -17.6 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | XIN FEI HONG |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -20 | V |  | 1 |
| Gate-Source Voltage | VGS | -10 |  | 10 | V |  | 1 |
| Drain Current-Continuous | ID |  |  | -4.5 | A |  | 1 |
| Drain Current-Pulsed | IDM |  |  | -17.6 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 1.25 | W |  | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 100 | ℃/W | Surface mounted on FR4 board, t ≤ 10 sec (Note 2) | 1 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=-20V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -10 |  | 10 | μA | VGS= ±10V, VDS=0V | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -20 |  |  | V | VGS=0V ID=-250μA | 2 |
| Gate Threshold Voltage | VGS(th) | -0.45 | -0.7 | -1.1 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 29 | 39 | mΩ | VGS=-4.5V, ID=-4A | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 41 | 54 | mΩ | VGS=-2.5V, ID=-2A | 2 |
| Diode Forward Voltage | VSD |  | -0.78 | -1 | V | VGS=0V,IS=-1A | 2 |
| Diode Forward Current | IS |  |  | -4 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `FH3415G+`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `fh3415g-etched.step` / `fh3415g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fh3415g.step` / `fh3415g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [XIN FEI HONG datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588954655849631744) (6 pp, sha256 `ac6a3b42f2d3b141`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fh3415g-datasheet.pdf)