component
FH3415G+
Public Made by Adomby adom
XIN FEI HONG MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| fh3415g-etched.glb | 17d ago |
| fh3415g-etched.step | 17d ago |
| fh3415g-hero.glb | 17d ago |
| fh3415g-hero.overlay.json | 17d ago |
| fh3415g.glb | 17d ago |
| fh3415g.kicad_mod | 17d ago |
| fh3415g.kicad_sym | 17d ago |
| fh3415g.lbr | 17d ago |
| fh3415g.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
FH3415G+
XIN FEI HONG · MOSFETs · SOT-23
FH3415G+ from XIN FEI HONG, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±10 V, ESD protected (HBM Class 3A, 4000~8000V), and the device operates with gate voltages as low as 1.8V. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous drain current is -4.5 A and diode forward current is -4 A. |
| 3 | D | passive | Drain of the P-channel MOSFET; drain-source voltage rating is -20 V, continuous drain current -4.5 A, pulsed -17.6 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XIN FEI HONG |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -10 | 10 | V | 1 | ||
| Drain Current-Continuous | ID | -4.5 | A | 1 | |||
| Drain Current-Pulsed | IDM | -17.6 | A | 1 | |||
| Maximum Power Dissipation | PD | 1.25 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 100 | ℃/W | Surface mounted on FR4 board, t ≤ 10 sec (Note 2) | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=-20V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -10 | 10 | μA | VGS= ±10V, VDS=0V | 2 | |
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS=0V ID=-250μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | -0.45 | -0.7 | -1.1 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 29 | 39 | mΩ | VGS=-4.5V, ID=-4A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 41 | 54 | mΩ | VGS=-2.5V, ID=-2A | 2 | |
| Diode Forward Voltage | VSD | -0.78 | -1 | V | VGS=0V,IS=-1A | 2 | |
| Diode Forward Current | IS | -4 | A | 2 |
CAD (KiCad official)
- Symbol:
FH3415G+ - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
fh3415g-etched.step/fh3415g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fh3415g.step/fh3415g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: XIN FEI HONG datasheet (6 pp, sha256
ac6a3b42f2d3b141, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).