main
Ray Set visibility: public 32c5532 17d ago
{
  "schema_version": 1,
  "type": "component",
  "slug": "fgy75t120sqdn",
  "title": "FGY75T120SQDN",
  "brief": "onsemi IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "package": "TO-247-3",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "IGBT Transistors / Modules",
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      "lcsc": "C898206",
      "digikey": "FGY75T120SQDNOS-ND",
      "mouser": "863-FGY75T120SQDN"
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      "source": "Component Ocean /api/assign-pns",
      "digikey": {
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        "status": "found",
        "lifecycle": "Active"
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        "name": "G",
        "type": "input",
        "description": "Gate; gate-to-emitter voltage is rated ±20 V continuous and ±30 V transient, with a typical threshold of 5.5 V (4.5 to 6.5 V)."
      },
      {
        "number": "2",
        "name": "C",
        "type": "passive",
        "description": "Collector (also the co-packaged diode cathode); collector-to-emitter voltage is rated 1200 V and collector current is 150 A at TC = 25°C and 75 A at TC = 100°C."
      },
      {
        "number": "3",
        "name": "E",
        "type": "passive",
        "description": "Emitter (also the co-packaged diode anode); it is the main current return terminal, and the gate drive is referenced to it."
      }
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        "extractor": "extract_pins 0.3",
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        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
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          "vision extraction: provenance cannot be text-verified; needs consensus"
        ],
        "pages_sent": 9,
        "cost_usd": 0.1272,
        "at": "2026-10-16T15:58:55"
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        "pages": 9,
        "sha256": "a5895b643bd9f6c0",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
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      "footprint": "viewers/footprint.html"
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        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
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        "zmin_mm": -15.83,
        "centre_offset_mm": 0.185,
        "footprint_binding": "identity",
        "sha256": "ec0db59b04bcea2e0db6f976bf3ab8644e761c8b0059239f77f4febd6dc9eff4",
        "checked": "2026-10-16",
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  "metadata": {
    "specs": {
      "Manufacturer": "onsemi",
      "Package": "TO-247-3",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
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      "datasheet_sha256": "a5895b643bd9f6c0eae9c962a1e0396f13ed182d17864da5529aa383a53f42fe",
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          "name": "Collector to Emitter Voltage",
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          "max": 1200,
          "conditions": "",
          "source_page": 1,
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        {
          "name": "Gate to Emitter Voltage",
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        {
          "name": "Transient Gate to Emitter Voltage",
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          "unit": "V",
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          "conditions": "Transient",
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        {
          "name": "Pulsed Collector Current",
          "symbol": "ILM",
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          "name": "Diode Forward Current",
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        {
          "name": "Maximum Power Dissipation",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 790,
          "conditions": "TC = 25°C",
          "source_page": 1,
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        {
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          "conditions": "TC = 100°C",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Operating Junction Temperature",
          "symbol": "TJ",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 175,
          "conditions": "",
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        {
          "name": "Storage Temperature Range",
          "symbol": "Tstg",
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          "unit": "°C",
          "min": -55,
          "typ": null,
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          "conditions": "",
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        },
        {
          "name": "Maximum Lead Temp. for Soldering Purposes",
          "symbol": "TL",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": null,
          "typ": null,
          "max": 300,
          "conditions": "1/8 in from case for 5 s",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance, Junction to Case (IGBT)",
          "symbol": "RJC",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 0.19,
          "conditions": "Max.",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance, Junction to Case (Diode)",
          "symbol": "RJC",
          "kind": "thermal",
          "unit": "°C/W",
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          "conditions": "Max.",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Thermal Resistance, Junction to Ambient",
          "symbol": "RJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 40,
          "conditions": "Max.",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Collector to Emitter Breakdown Voltage",
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          "kind": "electrical",
          "unit": "V",
          "min": 1200,
          "typ": null,
          "max": null,
          "conditions": "VGE = 0 V, IC = 500 A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Collector Cut-Off Current",
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          "kind": "electrical",
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          "conditions": "VCE = VCES, VGE = 0 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "G-E Leakage Current",
          "symbol": "IGES",
          "kind": "electrical",
          "unit": "nA",
          "min": -200,
          "typ": null,
          "max": 200,
          "conditions": "VGE = VGES, VCE = 0 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "G-E Threshold Voltage",
          "symbol": "VGE(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 4.5,
          "typ": 5.5,
          "max": 6.5,
          "conditions": "IC = 400 A, VCE = VGE",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Collector to Emitter Saturation Voltage",
          "symbol": "VCE(sat)",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": 1.7,
          "max": 1.95,
          "conditions": "IC = 75 A, VGE = 15 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Diode Forward Voltage",
          "symbol": "VFM",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": 3.4,
          "max": 4,
          "conditions": "IF = 75 A, TC = 25°C",
          "source_page": 3,
          "source": "datasheet"
        }
      ]
    }
  },
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  "discovery_triggers": [
    "fgy75t120sqdn"
  ],
  "discovery_pitch": "FGY75T120SQDN (onsemi) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
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