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Ray Publish 0.1.0 1f03251 5d ago

FFSB0865A

onsemi · SiC Diodes · TO-263

FFSB0865A from onsemi, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Cathode passive Cathode terminal; pins 1 and 3 are both cathode, and the device is rated 650 V peak repetitive reverse voltage (VRRM) with 8 A continuous forward current at TC < 152°C.
2 Anode passive Anode terminal of the SiC Schottky diode; the datasheet gives no separate pin-level limit beyond the device absolute maximum ratings.
3 Cathode passive Cathode terminal; pins 1 and 3 are both cathode, and the device is rated 650 V peak repetitive reverse voltage (VRRM) with 8 A continuous forward current at TC < 152°C.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-263
Category Silicon Carbide (SiC) Devices
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Operating and Storage Temperature Range TJ, TSTG -55 175 °C 2
Forward Voltage VF 1.5 1.75 V IF = 8 A, TC = 25°C 2
Forward Voltage VF 1.6 2 V IF = 8 A, TC = 125°C 2
Forward Voltage VF 1.72 2.4 V IF = 8 A, TC = 175°C 2
Reverse Current IR 200 A VR = 650 V, TC = 25°C 2
Reverse Current IR 400 A VR = 650 V, TC = 125°C 2
Reverse Current IR 600 A VR = 650 V, TC = 175°C 2
Peak Repetitive Reverse Voltage VRRM 650 V 2
Single Pulse Avalanche Energy EAS 49 mJ Note 1 2
Continuous Rectified Forward Current IF 8 A TC < 152°C 2
Continuous Rectified Forward Current IF 15.4 A TC < 135°C 2
Max Non-Repetitive Peak Forward Surge Current IF, Max 750 A TC = 25°C, 10 s 2
Max Non-Repetitive Peak Forward Surge Current IF, Max 730 A TC = 150°C, 10 s 2
Non-Repetitive Forward Surge Current IF,SM 49 A Half-Sine Pulse, tp = 8.3 ms 2
Repetitive Forward Surge Current IF,RM 28 A Half-Sine Pulse, tp = 8.3 ms 2
Power Dissipation Ptot 136 W TC = 25°C 2
Power Dissipation Ptot 23 W TC = 150°C 2
Thermal Resistance, Junction to Case RθJC 1.1 °C/W 2
Total Capacitive Charge QC 27 nC V = 400 V 2
Total Capacitance C 463 pF VR = 1 V, f = 100 kHz 2
Total Capacitance C 48 pF VR = 200 V, f = 100 kHz 2
Total Capacitance C 38 pF VR = 400 V, f = 100 kHz 2

CAD (KiCad official)

  • Symbol: FFSB0865A
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: ffsb0865a-etched.step / ffsb0865a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ffsb0865a.step / ffsb0865a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 a2317dbde1796a67, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF