FFSB0865A from onsemi, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	Cathode	passive	Cathode terminal; pins 1 and 3 are both cathode, and the device is rated 650 V peak repetitive reverse voltage (VRRM) with 8 A continuous forward current at TC < 152°C.
2	Anode	passive	Anode terminal of the SiC Schottky diode; the datasheet gives no separate pin-level limit beyond the device absolute maximum ratings.
3	Cathode	passive	Cathode terminal; pins 1 and 3 are both cathode, and the device is rated 650 V peak repetitive reverse voltage (VRRM) with 8 A continuous forward current at TC < 152°C.

Key specifications

Parameter	Value
Manufacturer	onsemi
Package	TO-263
Category	Silicon Carbide (SiC) Devices
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Operating and Storage Temperature Range	TJ, TSTG	-55		175	°C		2
Forward Voltage	VF		1.5	1.75	V	IF = 8 A, TC = 25°C	2
Forward Voltage	VF		1.6	2	V	IF = 8 A, TC = 125°C	2
Forward Voltage	VF		1.72	2.4	V	IF = 8 A, TC = 175°C	2
Reverse Current	IR			200	A	VR = 650 V, TC = 25°C	2
Reverse Current	IR			400	A	VR = 650 V, TC = 125°C	2
Reverse Current	IR			600	A	VR = 650 V, TC = 175°C	2
Peak Repetitive Reverse Voltage	VRRM			650	V		2
Single Pulse Avalanche Energy	EAS			49	mJ	Note 1	2
Continuous Rectified Forward Current	IF			8	A	TC < 152°C	2
Continuous Rectified Forward Current	IF			15.4	A	TC < 135°C	2
Max Non-Repetitive Peak Forward Surge Current	IF, Max			750	A	TC = 25°C, 10 s	2
Max Non-Repetitive Peak Forward Surge Current	IF, Max			730	A	TC = 150°C, 10 s	2
Non-Repetitive Forward Surge Current	IF,SM			49	A	Half-Sine Pulse, tp = 8.3 ms	2
Repetitive Forward Surge Current	IF,RM			28	A	Half-Sine Pulse, tp = 8.3 ms	2
Power Dissipation	Ptot			136	W	TC = 25°C	2
Power Dissipation	Ptot			23	W	TC = 150°C	2
Thermal Resistance, Junction to Case	RθJC			1.1	°C/W		2
Total Capacitive Charge	QC		27		nC	V = 400 V	2
Total Capacitance	C		463		pF	VR = 1 V, f = 100 kHz	2
Total Capacitance	C		48		pF	VR = 200 V, f = 100 kHz	2
Total Capacitance	C		38		pF	VR = 400 V, f = 100 kHz	2

CAD (KiCad official)

Symbol: FFSB0865A
Footprint: Package_TO_SOT_SMD:TO-263-2
3D model: TO-263 (KiCad packages3D, STEP)
3D model files: ffsb0865a-etched.step / ffsb0865a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ffsb0865a.step / ffsb0865a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: onsemi datasheet (5 pp, sha256 a2317dbde1796a67, retrieved 2026-10-30, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

FFSB0865A

Verified FFSB0865A

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

README