component

FDV302P

Public Made by Adom

by adom

MSKSEMI MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 20d ago
viewers fdv302p: viewers · Ray 20d ago
fdv302p-etched.glb Publish 0.1.0 · Ray 20d ago
fdv302p-etched.step fdv302p: factory component page (tier=lcsc) · Ray 20d ago
fdv302p-hero.glb fdv302p: hero GLB from the etched model (keeps the MPN mark) · Ray 20d ago
fdv302p-hero.overlay.json Publish 0.1.0 · Ray 20d ago
fdv302p.glb Publish 0.1.0 · Ray 20d ago
fdv302p.kicad_mod Publish 0.1.0 · Ray 20d ago
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fdv302p.lbr Publish 0.1.0 · Ray 20d ago
fdv302p.step Publish 0.1.0 · Ray 20d ago
package.json Publish 0.1.0 · Ray 20d ago
page.json fdv302p: specified limits as data (metadata.characteristics, 19 rows from the datasheet) · Ray 17d ago
README.md fdv302p: specified limits as data (metadata.characteristics, 19 rows from the datasheet) · Ray 17d ago

FDV302P

MSKSEMI · MOSFETs · SOT-23

FDV302P from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with a threshold of -1.0 V min to -2.5 V max at ID=-250 µA.
2 S passive Source of the P-channel MOSFET; continuous source current is -0.2 A max.
3 D passive Drain; drain-source voltage is -30 V max and continuous drain current is -0.2 A at TA=25℃ (pulsed -0.8 A).

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 2
Gate-Source Voltage VGS -20 20 V 2
Drain Current – Continuous ID -0.2 A TA=25℃ 2
Drain Current – Continuous ID -0.1 A TA=70℃ 2
Drain Current – Pulsed IDM -0.8 A 2
Power Dissipation PD 1 W TA=25℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Thermal Resistance Junction to ambient RθJA 80 ℃/W 2
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 3
Drain-Source Leakage Current IDSS -1 uA VDS=-30V, VGS=0V, TJ=25℃ 3
Drain-Source Leakage Current IDSS -10 uA VDS=-25V, VGS=0V, TJ=125℃ 3
Gate-Source Leakage Current IGSS -20 20 uA VGS=±20V, VDS=0V 3
Static Drain-Source On-Resistance RDS(ON) 4 8 Ω VGS=-10V, ID=-0.2A 3
Static Drain-Source On-Resistance RDS(ON) 8 10 Ω VGS=-4.5V, ID=-0.1A 3
Gate Threshold Voltage VGS(th) -1 -1.6 -2.5 V VGS=VDS, ID=-250uA 3
Continuous Source Current IS -0.2 A VG=VD=0V, Force Current 3
Pulsed Source Current ISM -0.4 A 3
Diode Forward Voltage VSD -1.3 V VGS=0V, IS=-0.2A, TJ=25℃ 3

CAD (KiCad official)

  • Symbol: FDV302P
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: fdv302p-etched.step / fdv302p-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdv302p.step / fdv302p.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (7 pp, sha256 e487c0e138830a55, retrieved 2026-10-12, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF