# FDS9933A

**onsemi** · MOSFETs · SO-8

FDS9933A from onsemi, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (P-channel, VDSS -20 V, continuous drain current -3.8 A). |
| 2 | G1 | input | Gate of MOSFET 1; VGSS rated ±8 V, RDS(on) 0.075 Ω at VGS = -4.5 V and 0.105 Ω at -2.5 V. |
| 3 | S2 | passive | Source of MOSFET 2 (P-channel, VDSS -20 V, continuous drain current -3.8 A). |
| 4 | G2 | input | Gate of MOSFET 2; VGSS rated ±8 V, RDS(on) 0.075 Ω at VGS = -4.5 V and 0.105 Ω at -2.5 V. |
| 5 | D2 | passive | Drain of MOSFET 2, tied to pin 6; the drain pins are the case thermal reference (RθJA 78 °C/W on 0.5 in² copper). |
| 6 | D2 | passive | Drain of MOSFET 2, tied to pin 5; the drain pins are the case thermal reference (RθJA 78 °C/W on 0.5 in² copper). |
| 7 | D1 | passive | Drain of MOSFET 1, tied to pin 8; the drain pins are the case thermal reference (RθJA 78 °C/W on 0.5 in² copper). |
| 8 | D1 | passive | Drain of MOSFET 1, tied to pin 7; the drain pins are the case thermal reference (RθJA 78 °C/W on 0.5 in² copper). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | -20 | V | TA=25°C | 2 |
| Gate-Source Voltage | VGSS | -8 |  | 8 | V | TA=25°C | 2 |
| Drain Current - Continuous | ID |  |  | -3.8 | A | Note 1a | 2 |
| Drain Current - Pulsed | ID |  |  | -20 | A | Pulsed | 2 |
| Power Dissipation for Dual Operation | PD |  |  | 2 | W | TA=25°C | 2 |
| Power Dissipation for Single Operation | PD |  |  | 1.6 | W | Note 1a | 2 |
| Power Dissipation for Single Operation | PD |  |  | 1 | W | Note 1b | 2 |
| Power Dissipation for Single Operation | PD |  |  | 0.9 | W | Note 1c | 2 |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  | 78 |  | °C/W | Note 1a | 2 |
| Thermal Resistance, Junction-to-Case | RθJC |  | 40 |  | °C/W | Note 1 | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -20 |  |  | V | VGS = 0 V, ID = -250 µA | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS = -16 V, VGS = 0 V | 3 |
| Gate-Body Leakage, Forward | IGSSF |  |  | 100 | nA | VGS = 8 V, VDS = 0 V | 3 |
| Gate-Body Leakage, Reverse | IGSSR | -100 |  |  | nA | VGS = -8 V, VDS = 0 V | 3 |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.8 | -1.5 | V | VDS = VGS, ID = -250 µA | 3 |
| Static Drain-Source On-Resistance | RDS(on) |  | 0.058 | 0.075 | Ω | VGS = -4.5 V, ID = -3.8 A | 3 |
| Static Drain-Source On-Resistance | RDS(on) |  | 0.086 | 0.12 | Ω | VGS = -4.5 V, ID = -3.8 A, TJ = 125°C | 3 |
| Static Drain-Source On-Resistance | RDS(on) |  | 0.084 | 0.105 | Ω | VGS = -2.5 V, ID = -3.3 A | 3 |
| On-State Drain Current | ID(on) | -10 |  |  | A | VGS = -4.5 V, VDS = -5.0 V | 3 |
| Turn-On Delay Time | td(on) |  | 6 | 12 | ns | VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 6.0 Ω | 3 |
| Turn-On Rise Time | tr |  | 9 | 18 | ns | VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 6.0 Ω | 3 |
| Turn-Off Delay Time | td(off) |  | 31 | 50 | ns | VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 6.0 Ω | 3 |
| Turn-Off Fall Time | tf |  | 28 | 42 | ns | VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 6.0 Ω | 3 |
| Total Gate Charge | Qg |  | 7 | 10 | nC | VDS = -10 V, ID = -3.8 A, VGS = -4.5 V | 3 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | -1.3 | A |  | 3 |
| Drain-Source Diode Forward Voltage | VSD |  | -0.75 | -1.2 | V | VGS = 0 V, IS = -1.3 A (Note 2) | 3 |
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ |  | -16 |  | mV/°C | ID = -250 µA, Referenced to 25°C | 3 |
| Gate Threshold Voltage Temperature Coefficient | ΔVGS(th)/ΔTJ |  | 2.5 |  | mV/°C | ID = -250 µA, Referenced to 25°C | 3 |
| Forward Transconductance | gFS |  | 10 |  | S | VDS = -4.5 V, ID = -3.8 A | 3 |
| Input Capacitance | Ciss |  | 600 |  | pF | VDS = -10 V, VGS = 0 V, f = 1.0 MHz | 3 |
| Output Capacitance | Coss |  | 175 |  | pF | VDS = -10 V, VGS = 0 V, f = 1.0 MHz | 3 |
| Reverse Transfer Capacitance | Crss |  | 80 |  | pF | VDS = -10 V, VGS = 0 V, f = 1.0 MHz | 3 |
| Gate-Source Charge | Qgs |  | 1.3 |  | nC | VDS = -10 V, ID = -3.8 A, VGS = -4.5 V | 3 |
| Gate-Drain Charge | Qgd |  | 2 |  | nC | VDS = -10 V, ID = -3.8 A, VGS = -4.5 V | 3 |

## CAD (KiCad official)

- Symbol: `FDS9933A`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `fds9933a-etched.step` / `fds9933a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fds9933a.step` / `fds9933a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://www.onsemi.com/pdf/datasheet/fds9933a-d.pdf) (7 pp, sha256 `7adb08cbb3fca3b6`, retrieved 2026-10-31, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fds9933a-datasheet.pdf)