component
FDS9933A
Public Made by Adomby adom
onsemi MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 6d ago |
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| fds9933a-etched.glb | 6d ago |
| fds9933a-etched.step | 6d ago |
| fds9933a-hero.glb | 6d ago |
| fds9933a-hero.overlay.json | 6d ago |
| fds9933a.glb | 6d ago |
| fds9933a.kicad_mod | 6d ago |
| fds9933a.kicad_sym | 6d ago |
| fds9933a.lbr | 6d ago |
| fds9933a.step | 6d ago |
| package.json | 6d ago |
| page.json | 6d ago |
| README.md | 6d ago |
| verification.json | 6d ago |
FDS9933A
onsemi · MOSFETs · SO-8
FDS9933A from onsemi, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (P-channel, VDSS -20 V, continuous drain current -3.8 A). |
| 2 | G1 | input | Gate of MOSFET 1; VGSS rated ±8 V, RDS(on) 0.075 Ω at VGS = -4.5 V and 0.105 Ω at -2.5 V. |
| 3 | S2 | passive | Source of MOSFET 2 (P-channel, VDSS -20 V, continuous drain current -3.8 A). |
| 4 | G2 | input | Gate of MOSFET 2; VGSS rated ±8 V, RDS(on) 0.075 Ω at VGS = -4.5 V and 0.105 Ω at -2.5 V. |
| 5 | D2 | passive | Drain of MOSFET 2, tied to pin 6; the drain pins are the case thermal reference (RθJA 78 °C/W on 0.5 in² copper). |
| 6 | D2 | passive | Drain of MOSFET 2, tied to pin 5; the drain pins are the case thermal reference (RθJA 78 °C/W on 0.5 in² copper). |
| 7 | D1 | passive | Drain of MOSFET 1, tied to pin 8; the drain pins are the case thermal reference (RθJA 78 °C/W on 0.5 in² copper). |
| 8 | D1 | passive | Drain of MOSFET 1, tied to pin 7; the drain pins are the case thermal reference (RθJA 78 °C/W on 0.5 in² copper). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -20 | V | TA=25°C | 2 | ||
| Gate-Source Voltage | VGSS | -8 | 8 | V | TA=25°C | 2 | |
| Drain Current - Continuous | ID | -3.8 | A | Note 1a | 2 | ||
| Drain Current - Pulsed | ID | -20 | A | Pulsed | 2 | ||
| Power Dissipation for Dual Operation | PD | 2 | W | TA=25°C | 2 | ||
| Power Dissipation for Single Operation | PD | 1.6 | W | Note 1a | 2 | ||
| Power Dissipation for Single Operation | PD | 1 | W | Note 1b | 2 | ||
| Power Dissipation for Single Operation | PD | 0.9 | W | Note 1c | 2 | ||
| Operating and Storage Junction Temperature Range | TJ, Tstg | -55 | 150 | °C | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 78 | °C/W | Note 1a | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 40 | °C/W | Note 1 | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS = 0 V, ID = -250 µA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -16 V, VGS = 0 V | 3 | ||
| Gate-Body Leakage, Forward | IGSSF | 100 | nA | VGS = 8 V, VDS = 0 V | 3 | ||
| Gate-Body Leakage, Reverse | IGSSR | -100 | nA | VGS = -8 V, VDS = 0 V | 3 | ||
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.8 | -1.5 | V | VDS = VGS, ID = -250 µA | 3 |
| Static Drain-Source On-Resistance | RDS(on) | 0.058 | 0.075 | Ω | VGS = -4.5 V, ID = -3.8 A | 3 | |
| Static Drain-Source On-Resistance | RDS(on) | 0.086 | 0.12 | Ω | VGS = -4.5 V, ID = -3.8 A, TJ = 125°C | 3 | |
| Static Drain-Source On-Resistance | RDS(on) | 0.084 | 0.105 | Ω | VGS = -2.5 V, ID = -3.3 A | 3 | |
| On-State Drain Current | ID(on) | -10 | A | VGS = -4.5 V, VDS = -5.0 V | 3 | ||
| Turn-On Delay Time | td(on) | 6 | 12 | ns | VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 6.0 Ω | 3 | |
| Turn-On Rise Time | tr | 9 | 18 | ns | VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 6.0 Ω | 3 | |
| Turn-Off Delay Time | td(off) | 31 | 50 | ns | VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 6.0 Ω | 3 | |
| Turn-Off Fall Time | tf | 28 | 42 | ns | VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 6.0 Ω | 3 | |
| Total Gate Charge | Qg | 7 | 10 | nC | VDS = -10 V, ID = -3.8 A, VGS = -4.5 V | 3 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | -1.3 | A | 3 | |||
| Drain-Source Diode Forward Voltage | VSD | -0.75 | -1.2 | V | VGS = 0 V, IS = -1.3 A (Note 2) | 3 | |
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | -16 | mV/°C | ID = -250 µA, Referenced to 25°C | 3 | ||
| Gate Threshold Voltage Temperature Coefficient | ΔVGS(th)/ΔTJ | 2.5 | mV/°C | ID = -250 µA, Referenced to 25°C | 3 | ||
| Forward Transconductance | gFS | 10 | S | VDS = -4.5 V, ID = -3.8 A | 3 | ||
| Input Capacitance | Ciss | 600 | pF | VDS = -10 V, VGS = 0 V, f = 1.0 MHz | 3 | ||
| Output Capacitance | Coss | 175 | pF | VDS = -10 V, VGS = 0 V, f = 1.0 MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 80 | pF | VDS = -10 V, VGS = 0 V, f = 1.0 MHz | 3 | ||
| Gate-Source Charge | Qgs | 1.3 | nC | VDS = -10 V, ID = -3.8 A, VGS = -4.5 V | 3 | ||
| Gate-Drain Charge | Qgd | 2 | nC | VDS = -10 V, ID = -3.8 A, VGS = -4.5 V | 3 |
CAD (KiCad official)
- Symbol:
FDS9933A - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
fds9933a-etched.step/fds9933a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fds9933a.step/fds9933a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
7adb08cbb3fca3b6, retrieved 2026-10-31, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).