component
FDS89161LZ
Public Made by Adomby adom
onsemi MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| fds89161lz-etched.glb | 7d ago |
| fds89161lz-etched.step | 7d ago |
| fds89161lz-hero.glb | 7d ago |
| fds89161lz-hero.overlay.json | 7d ago |
| fds89161lz.glb | 7d ago |
| fds89161lz.kicad_mod | 7d ago |
| fds89161lz.kicad_sym | 7d ago |
| fds89161lz.lbr | 7d ago |
| fds89161lz.step | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
FDS89161LZ
onsemi · MOSFETs · SO-8
FDS89161LZ from onsemi, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of Q1 (N-channel, 100 V VDS rating). |
| 2 | G1 | input | Gate of Q1, logic-level with integrated G-S ESD zener diode, VGS rated ±20 V. |
| 3 | S2 | passive | Source of Q2 (N-channel, 100 V VDS rating). |
| 4 | G2 | input | Gate of Q2, logic-level with integrated G-S ESD zener diode, VGS rated ±20 V. |
| 5 | D2 | passive | Drain of Q2, continuous drain current 2.7 A, pulsed 15 A. |
| 6 | D2 | passive | Drain of Q2, continuous drain current 2.7 A, pulsed 15 A. |
| 7 | D1 | passive | Drain of Q1, continuous drain current 2.7 A, pulsed 15 A. |
| 8 | D1 | passive | Drain of Q1, continuous drain current 2.7 A, pulsed 15 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | BVDSS | 100 | V | ID = 250 µA, VGS = 0 V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 80 V, VGS = 0 V | 3 | ||
| Gate to Source Leakage Current | IGSS | -10 | 10 | µA | VGS = ±20 V, VDS = 0 V | 3 | |
| Gate to Source Threshold Voltage | VGS(th) | 1 | 1.7 | 2.2 | V | VGS = VDS, ID = 250 µA | 3 |
| Static Drain to Source On Resistance | rDS(on) | 81 | 105 | mΩ | VGS = 10 V, ID = 2.7 A | 3 | |
| Static Drain to Source On Resistance | rDS(on) | 110 | 160 | mΩ | VGS = 4.5 V, ID = 2.1 A | 3 | |
| Static Drain to Source On Resistance | rDS(on) | 140 | 182 | mΩ | VGS = 10 V, ID = 2.7 A, TJ = 125 °C | 3 | |
| Input Capacitance | Ciss | 227 | 302 | pF | VDS = 50 V, VGS = 0 V, f = 1MHz | 3 | |
| Output Capacitance | Coss | 44 | 58 | pF | VDS = 50 V, VGS = 0 V, f = 1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 3 | 4 | pF | VDS = 50 V, VGS = 0 V, f = 1MHz | 3 | |
| Turn-On Delay Time | td(on) | 3.8 | 10 | ns | VDD = 50 V, ID = 2.7 A, VGS = 10 V, RGEN = 6 Ω | 3 | |
| Rise Time | tr | 1.2 | 10 | ns | VDD = 50 V, ID = 2.7 A, VGS = 10 V, RGEN = 6 Ω | 3 | |
| Turn-Off Delay Time | td(off) | 9.5 | 17 | ns | VDD = 50 V, ID = 2.7 A, VGS = 10 V, RGEN = 6 Ω | 3 | |
| Fall Time | tf | 1.6 | 10 | ns | VDD = 50 V, ID = 2.7 A, VGS = 10 V, RGEN = 6 Ω | 3 | |
| Total Gate Charge | Qg(TOT) | 3.8 | 5.3 | nC | VGS = 0 V to 10 V, VDD = 50 V, ID = 2.7 A | 3 | |
| Total Gate Charge | Qg(TOT) | 2.1 | 2.9 | nC | VGS = 0 V to 5 V, VDD = 50 V, ID = 2.7 A | 3 | |
| Source to Drain Diode Forward Voltage | VSD | 0.8 | 1.3 | V | VGS = 0 V, IS = 2.7 A (Note 2) | 3 | |
| Source to Drain Diode Forward Voltage | VSD | 0.8 | 1.2 | V | VGS = 0 V, IS = 2 A (Note 2) | 3 | |
| Reverse Recovery Time | trr | 31 | 56 | ns | IF = 2.7 A, di/dt = 100 A/µs | 3 | |
| Reverse Recovery Charge | Qrr | 20 | 36 | nC | IF = 2.7 A, di/dt = 100 A/µs | 3 | |
| Drain to Source Voltage | VDS | 100 | V | 2 | |||
| Gate to Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Drain Current Continuous | ID | 2.7 | A | 2 | |||
| Drain Current Pulsed | ID | 15 | A | Pulsed | 2 | ||
| Single Pulse Avalanche Energy | EAS | 13 | mJ | Note 3 | 2 | ||
| Power Dissipation | PD | 31 | W | TC = 25 °C | 2 | ||
| Power Dissipation | PD | 1.6 | W | TA = 25 °C (Note 1a) | 2 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 40 | °C/W | Note 1 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 78 | °C/W | Note 1a: 1 in² pad of 2 oz copper | 2 |
CAD (KiCad official)
- Symbol:
FDS89161LZ - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
fds89161lz-etched.step/fds89161lz-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fds89161lz.step/fds89161lz.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (8 pp, sha256
a91f4b06b448641e, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).