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FDS4935BZ

Public Made by Adom

by adom

onsemi MOSFETs, SO-8. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.

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FDS4935BZ

onsemi · MOSFETs · SO-8

FDS4935BZ from onsemi, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source of P-channel MOSFET Q2, with an ESD protection diode between gate G2 and this source.
2 G2 input Gate of P-channel MOSFET Q2, with a maximum gate-source voltage of ±25 V.
3 S1 passive Source of P-channel MOSFET Q1, with an ESD protection diode between gate G1 and this source.
4 G1 input Gate of P-channel MOSFET Q1, with a maximum gate-source voltage of ±25 V.
5 D1 passive Drain of P-channel MOSFET Q1, rated at -30 V drain-source and -6.9 A continuous; tied to pin 6.
6 D1 passive Drain of P-channel MOSFET Q1, rated at -30 V drain-source and -6.9 A continuous; tied to pin 5.
7 D2 passive Drain of P-channel MOSFET Q2, rated at -30 V drain-source and -6.9 A continuous; tied to pin 8.
8 D2 passive Drain of P-channel MOSFET Q2, rated at -30 V drain-source and -6.9 A continuous; tied to pin 7.

Key specifications

Parameter Value
Manufacturer onsemi
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0 V, ID = -250 µA 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -24 V, VGS = 0 V 2
Gate-Body Leakage IGSS 10 µA VGS = +25 V, VDS = 0 V 2
Gate Threshold Voltage VGS(th) -1 -1.9 -3 V VDS = VGS, ID = -250 µA 2
Static Drain-Source On-Resistance rDS(on) 18 22 mΩ VGS = -10 V, ID = -6.9 A 2
Static Drain-Source On-Resistance rDS(on) 27.5 35 mΩ VGS = -4.5 V, ID = -5.3 A 2
Static Drain-Source On-Resistance rDS(on) 26 34 mΩ VGS = -10 V, ID = -6.9 A, TJ = 125°C 2
Forward Transconductance gFS 22 S VDS = -5 V, ID = -6.9 A 2
Turn-On Delay Time td(on) 12 22 ns 2
Turn-On Rise Time tr 13 23 ns 2
Turn-Off Delay Time td(off) 68 108 ns 2
Turn-Off Fall Time tf 38 61 ns VDD = -15 V, ID = -1 A, VGS = -10 V, RGEN = 6 Ω 2
Total Gate Charge Qg(TOT) 29 40 nC VGS = 10V 2
Total Gate Charge Qg(TOT) 16 23 nC VGS = 5V 2
Drain-Source Diode Forward Voltage VSD -0.8 -1.2 V VGS = 0 V, IS = -2.1 A (Note 2) 2
Maximum Continuous Drain-Source Diode Forward Current IS -2.1 A 2
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS 25 V 1
Drain Current, Continuous ID -6.9 A Note 1a 1
Drain Current, Pulsed ID -50 A 1
Power Dissipation for Single Operation PD 1.6 W Note 1a 1
Power Dissipation for Single Operation PD 1 W Note 1b 1
Power Dissipation for Single Operation PD 0.9 W Note 1c 1
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 °C 1
Thermal Resistance, Junction-to-Ambient RTJA 78 °C/W Note 1a: steady state, 1 in² pad of 2 oz copper 1
Thermal Resistance, Junction-to-Ambient RTJA 125 °C/W Note 1b: .04 in² pad of 2 oz copper 2
Thermal Resistance, Junction-to-Ambient RTJA 135 °C/W Note 1c: minimum pad 2
Thermal Resistance, Junction-to-Case RTJC 40 °C/W Note 1 1

CAD (KiCad official)

  • Symbol: FDS4935BZ
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: fds4935bz-etched.step / fds4935bz-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fds4935bz.step / fds4935bz.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 8b7e5b101166295d, retrieved 2026-10-21, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF