component
FDS4935BZ
Public Made by Adomby adom
onsemi MOSFETs, SO-8. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownFDS4935BZ
onsemi · MOSFETs · SO-8
FDS4935BZ from onsemi, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of P-channel MOSFET Q2, with an ESD protection diode between gate G2 and this source. |
| 2 | G2 | input | Gate of P-channel MOSFET Q2, with a maximum gate-source voltage of ±25 V. |
| 3 | S1 | passive | Source of P-channel MOSFET Q1, with an ESD protection diode between gate G1 and this source. |
| 4 | G1 | input | Gate of P-channel MOSFET Q1, with a maximum gate-source voltage of ±25 V. |
| 5 | D1 | passive | Drain of P-channel MOSFET Q1, rated at -30 V drain-source and -6.9 A continuous; tied to pin 6. |
| 6 | D1 | passive | Drain of P-channel MOSFET Q1, rated at -30 V drain-source and -6.9 A continuous; tied to pin 5. |
| 7 | D2 | passive | Drain of P-channel MOSFET Q2, rated at -30 V drain-source and -6.9 A continuous; tied to pin 8. |
| 8 | D2 | passive | Drain of P-channel MOSFET Q2, rated at -30 V drain-source and -6.9 A continuous; tied to pin 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -24 V, VGS = 0 V | 2 | ||
| Gate-Body Leakage | IGSS | 10 | µA | VGS = +25 V, VDS = 0 V | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -1.9 | -3 | V | VDS = VGS, ID = -250 µA | 2 |
| Static Drain-Source On-Resistance | rDS(on) | 18 | 22 | mΩ | VGS = -10 V, ID = -6.9 A | 2 | |
| Static Drain-Source On-Resistance | rDS(on) | 27.5 | 35 | mΩ | VGS = -4.5 V, ID = -5.3 A | 2 | |
| Static Drain-Source On-Resistance | rDS(on) | 26 | 34 | mΩ | VGS = -10 V, ID = -6.9 A, TJ = 125°C | 2 | |
| Forward Transconductance | gFS | 22 | S | VDS = -5 V, ID = -6.9 A | 2 | ||
| Turn-On Delay Time | td(on) | 12 | 22 | ns | 2 | ||
| Turn-On Rise Time | tr | 13 | 23 | ns | 2 | ||
| Turn-Off Delay Time | td(off) | 68 | 108 | ns | 2 | ||
| Turn-Off Fall Time | tf | 38 | 61 | ns | VDD = -15 V, ID = -1 A, VGS = -10 V, RGEN = 6 Ω | 2 | |
| Total Gate Charge | Qg(TOT) | 29 | 40 | nC | VGS = 10V | 2 | |
| Total Gate Charge | Qg(TOT) | 16 | 23 | nC | VGS = 5V | 2 | |
| Drain-Source Diode Forward Voltage | VSD | -0.8 | -1.2 | V | VGS = 0 V, IS = -2.1 A (Note 2) | 2 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | -2.1 | A | 2 | |||
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | 25 | V | 1 | |||
| Drain Current, Continuous | ID | -6.9 | A | Note 1a | 1 | ||
| Drain Current, Pulsed | ID | -50 | A | 1 | |||
| Power Dissipation for Single Operation | PD | 1.6 | W | Note 1a | 1 | ||
| Power Dissipation for Single Operation | PD | 1 | W | Note 1b | 1 | ||
| Power Dissipation for Single Operation | PD | 0.9 | W | Note 1c | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RTJA | 78 | °C/W | Note 1a: steady state, 1 in² pad of 2 oz copper | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RTJA | 125 | °C/W | Note 1b: .04 in² pad of 2 oz copper | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RTJA | 135 | °C/W | Note 1c: minimum pad | 2 | ||
| Thermal Resistance, Junction-to-Case | RTJC | 40 | °C/W | Note 1 | 1 |
CAD (KiCad official)
- Symbol:
FDS4935BZ - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
fds4935bz-etched.step/fds4935bz-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fds4935bz.step/fds4935bz.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (5 pp, sha256
8b7e5b101166295d, retrieved 2026-10-21, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).