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FDS4559

Public Made by Adom

by adom

onsemi MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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FDS4559

onsemi · MOSFETs · SO-8

FDS4559 from onsemi, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Q1 (N-channel) source terminal; Q1 is rated 60 V VDSS and 4.5 A continuous drain current.
2 G1 input Q1 (N-channel) gate terminal; gate-source voltage is rated to ±20 V (VGSS).
3 S2 passive Q2 (P-channel) source terminal; Q2 is rated -60 V VDSS and -3.5 A continuous drain current.
4 G2 input Q2 (P-channel) gate terminal; gate-source voltage is rated to ±20 V (VGSS).
5 D2 passive Q2 (P-channel) drain terminal; operating and storage junction temperature range is -55 to +175 °C.
6 D2 passive Q2 (P-channel) drain terminal, internally common with pin 5; pulsed drain current is rated -20 A.
7 D1 passive Q1 (N-channel) drain terminal, internally common with pin 8; pulsed drain current is rated 20 A.
8 D1 passive Q1 (N-channel) drain terminal; continuous drain current is rated 4.5 A (Note 1a).

Key specifications

Parameter Value
Manufacturer onsemi
Package SO-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (Q1, N-channel) VDSS 60 V 2
Drain-Source Voltage (Q2, P-channel) VDSS -60 V 2
Gate-Source Voltage (Q1) VGSS -20 20 V 2
Gate-Source Voltage (Q2) VGSS -20 20 V 2
Drain Current - Continuous (Q1) ID 4.5 A Note 1a 2
Drain Current - Continuous (Q2) ID -3.5 A Note 1a 2
Drain Current - Pulsed (Q1) ID 20 A Pulsed 2
Drain Current - Pulsed (Q2) ID -20 A Pulsed 2
Power Dissipation for Dual Operation PD 2 W Dual operation 2
Power Dissipation for Single Operation PD 1.6 W Single operation (Note 1a) 2
Power Dissipation for Single Operation PD 1.2 W Single operation (Note 1b) 2
Power Dissipation for Single Operation PD 1 W Single operation (Note 1c) 2
Operating and Storage Junction Temperature Range TJ, TSTG -55 175 °C 2
Drain-Source Breakdown Voltage (Q1) BVDSS 60 V VGS = 0 V, ID = 250 µA 3
Drain-Source Breakdown Voltage (Q2) BVDSS -60 V VGS = 0 V, ID = -250 µA 3
Zero Gate Voltage Drain Current (Q1) IDSS 1 µA VDS = 48 V, VGS = 0 V 3
Zero Gate Voltage Drain Current (Q2) IDSS -1 µA VDS = -48 V, VGS = 0 V 3
Gate-Body Leakage (Q1) IGSS 100 nA VGS = +20 V, VDS = 0 V 3
Gate-Body Leakage (Q2) IGSS 100 nA VGS = +20 V, VDS = 0 V 3
Gate Threshold Voltage (Q1) VGS(th) 1 2.2 3 V VDS = VGS, ID = 250 µA 3
Gate Threshold Voltage (Q2) VGS(th) -1 -1.6 -3 V VDS = VGS, ID = -250 µA 3
Static Drain-Source On-Resistance (Q1) RDS(on) 42 55 mΩ VGS = 10 V, ID = 4.5 A 3
Static Drain-Source On-Resistance (Q1) RDS(on) 72 94 mΩ VGS = 10 V, ID = 4.5 A, TJ = 125°C 3
Static Drain-Source On-Resistance (Q1) RDS(on) 55 75 mΩ VGS = 4.5 V, ID = 4 A 3
Static Drain-Source On-Resistance (Q2) RDS(on) 82 105 mΩ VGS = -10 V, ID = -3.5 A 3
Static Drain-Source On-Resistance (Q2) RDS(on) 130 190 mΩ VGS = -10 V, ID = -3.5 A, TJ = 125°C 3
Static Drain-Source On-Resistance (Q2) RDS(on) 105 135 mΩ VGS = -4.5 V, ID = -3.1 A 3
On-State Drain Current (Q1) ID(on) 20 A VGS = 10 V, VDS = 5 V 3
On-State Drain Current (Q2) ID(on) -20 A VGS = -10 V, VDS = -5 V 3
Turn-On Delay Time (Q1) td(on) 11 20 ns VDD = 30 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 3
Turn-On Delay Time (Q2) td(on) 7 14 ns VDD = -30 V, ID = -1 A, VGS = -10 V, RGEN = 6 Ω 3
Turn-On Rise Time (Q1) tr 8 18 ns VDD = 30 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 3
Turn-On Rise Time (Q2) tr 10 20 ns VDD = -30 V, ID = -1 A, VGS = -10 V, RGEN = 6 Ω 3
Turn-Off Delay Time (Q1) td(off) 19 35 ns VDD = 30 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 3
Turn-Off Delay Time (Q2) td(off) 19 34 ns VDD = -30 V, ID = -1 A, VGS = -10 V, RGEN = 6 Ω 3
Turn-Off Fall Time (Q1) tf 6 15 ns VDD = 30 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 3
Turn-Off Fall Time (Q2) tf 12 22 ns VDD = -30 V, ID = -1 A, VGS = -10 V, RGEN = 6 Ω 3
Total Gate Charge (Q1) Qg 12.5 18 nC VDS = 30 V, ID = 4.5 A, VGS = 10 V 3
Total Gate Charge (Q2) Qg 15 21 nC VDS = -30 V, ID = -3.5 A, VGS = -10V 3
Maximum Continuous Drain-Source Diode Forward Current (Q1) IS 1.3 A 4
Maximum Continuous Drain-Source Diode Forward Current (Q2) IS -1.3 A 4
Drain-Source Diode Forward Voltage (Q1) VSD 0.8 1.2 V VGS = 0 V, IS = 1.3 A (Note 2) 4
Drain-Source Diode Forward Voltage (Q2) VSD -0.8 -1.2 V VGS = 0 V, IS = -1.3 A (Note 2) 4
Thermal Resistance, Junction-to-Ambient RθJA 78 °C/W Note 1a 2
Thermal Resistance, Junction-to-Case RθJC 40 °C/W Note 1 2
Single Pulse Drain-Source Avalanche Energy (Q1) WDSS 90 mJ VDD = 30 V, ID = 4.5 A 3
Maximum Drain-Source Avalanche Current (Q1) IAR 4.5 A 3
Breakdown Voltage Temperature Coefficient (Q1) ∆BVDSS/∆TJ 58 mV/°C ID = 250 µA, Referenced to 25°C 3
Breakdown Voltage Temperature Coefficient (Q2) ∆BVDSS/∆TJ -49 mV/°C ID = -250 µA, Referenced to 25°C 3
Gate Threshold Voltage Temperature Coefficient (Q1) ∆VGS(th)/∆TJ -5.5 mV/°C ID = 250 µA, Referenced to 25°C 3
Gate Threshold Voltage Temperature Coefficient (Q2) ∆VGS(th)/∆TJ 4 mV/°C ID = -250 µA, Referenced to 25°C 3
Forward Transconductance (Q1) gFS 14 S VDS = 10 V, ID = 4.5 A 3
Forward Transconductance (Q2) gFS 9 S VDS = -5 V, ID = -3 5 A 3
Input Capacitance (Q1) Ciss 650 pF 3
Input Capacitance (Q2) Ciss 759 pF 3
Output Capacitance (Q1) Coss 80 pF 3
Output Capacitance (Q2) Coss 90 pF 3
Reverse Transfer Capacitance (Q1) Crss 35 pF VDS = 25 V, VGS = 0 V, f = 1.0 MHz 3
Reverse Transfer Capacitance (Q2) Crss 39 pF VDS = -30 V, VGS = 0 V, f = 1.0 MHz 3

CAD (KiCad official)

  • Symbol: FDS4559
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: fds4559-etched.step / fds4559-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fds4559.step / fds4559.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (10 pp, sha256 301a69b67914a625, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF