main
Ray Set visibility: public 795f28e 14d ago
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{
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  "type": "component",
  "slug": "fds4465",
  "title": "FDS4465",
  "brief": "onsemi MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "transistors-thyristors",
    "fds4465",
    "factory-2.0.0",
    "extractor-text"
  ],
  "component": {
    "mpn": "FDS4465",
    "manufacturer": "onsemi",
    "package": "SO-8",
    "pin_count": 8,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588918015031726080",
    "parts": {
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      "footprint": "fds4465.kicad_mod",
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      "model_3d_plain": "fds4465-etched.glb",
      "model_3d_step": "fds4465-etched.step",
      "model_3d_step_plain": "fds4465.step",
      "lbr": "fds4465.lbr"
    },
    "distributor_links": {
      "lcsc": "C92137",
      "digikey": "FDS4465TR-ND",
      "mouser": "512-FDS4465"
    },
    "distributor_check": {
      "checked_at": "2026-10-20T18:20:27Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": "FDS4465TR-ND",
        "status": "found",
        "lifecycle": "Active"
      },
      "mouser": {
        "pn": "512-FDS4465",
        "status": "found"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the P-channel MOSFET; pin 1 is marked on the package outline, and the absolute maximum VDSS is −20 V."
      },
      {
        "number": "2",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the P-channel MOSFET, with the absolute maximum drain-to-source voltage VDSS of −20 V."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the P-channel MOSFET, with the absolute maximum drain-to-source voltage VDSS of −20 V."
      },
      {
        "number": "4",
        "name": "G",
        "type": "input",
        "description": "Gate terminal of the MOSFET; the absolute maximum gate-to-source voltage VGSS is ±8 V."
      },
      {
        "number": "5",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the MOSFET; the drain pins form the solder mounting surface referenced for thermal resistance, and continuous drain current is −13.5 A."
      },
      {
        "number": "6",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the MOSFET; the drain pins form the solder mounting surface referenced for thermal resistance, and continuous drain current is −13.5 A."
      },
      {
        "number": "7",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the MOSFET; the drain pins form the solder mounting surface referenced for thermal resistance, and continuous drain current is −13.5 A."
      },
      {
        "number": "8",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the MOSFET; the drain pins form the solder mounting surface referenced for thermal resistance, and continuous drain current is −13.5 A."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
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        "extractor": "extract_pins 0.3",
        "primary_model": "claude-haiku-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The datasheet has no explicit pin table. The pin-to-function mapping is taken from the marking diagr; The marking diagram text contains an extra standalone 'S' that could be a third source label or a di; The datasheet gives no separate functional description for the source or gate pins. Their descriptio"
        ],
        "pages_sent": 7,
        "cost_usd": 0.0394,
        "at": "2026-10-20T18:18:11"
      },
      "datasheet": {
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        "pages": 7,
        "sha256": "c85502aa2fa42017",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
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  "metadata": {
    "specs": {
      "Manufacturer": "onsemi",
      "Package": "SO-8",
      "Category": "Transistors/Thyristors",
      "Pins": "8"
    },
    "characteristics": {
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      "source": "datasheet",
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        {
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        {
          "name": "Drain Current Pulsed",
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          "conditions": "Pulsed",
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        {
          "name": "Power Dissipation",
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        {
          "name": "Operating and Storage Junction Temperature Range",
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          "min": -55,
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          "conditions": "",
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        {
          "name": "Thermal Resistance, Junction−to−Ambient",
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          "kind": "thermal",
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          "typ": null,
          "max": 50,
          "conditions": "Note 1a: 1 in2 pad of 2 oz copper",
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          "name": "Thermal Resistance, Junction−to−Ambient",
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          "conditions": "Note 1c: minimum pad",
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          "name": "Thermal Resistance, Junction−to−Ambient",
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          "max": 25,
          "conditions": "Note 1",
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        {
          "name": "Drain−Source Breakdown Voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
          "unit": "V",
          "min": -20,
          "typ": null,
          "max": null,
          "conditions": "VGS = 0 V, ID = 250 µA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Zero Gate Voltage Drain Current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": -1,
          "conditions": "VDS = −16 V, VGS = 0 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate–Body Leakage, Forward",
          "symbol": "IGSSF",
          "kind": "electrical",
          "unit": "nA",
          "min": null,
          "typ": null,
          "max": 100,
          "conditions": "VGS = 8 V, VDS = 0 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate–Body Leakage, Reverse",
          "symbol": "IGSSR",
          "kind": "electrical",
          "unit": "nA",
          "min": null,
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          "conditions": "VGS = −8 V, VDS = 0 V",
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        {
          "name": "Gate Threshold Voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
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          "min": -0.4,
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          "conditions": "VDS = VGS, ID = 250 µA",
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        {
          "name": "Static Drain−Source On−Resistance",
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          "unit": "mΩ",
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          "typ": 6.7,
          "max": 8.5,
          "conditions": "VGS = −4.5 V, ID = −13.5 A",
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        },
        {
          "name": "Static Drain−Source On−Resistance",
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          "kind": "electrical",
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          "min": null,
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          "conditions": "VGS = −2.5 V, ID = −12 A",
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        {
          "name": "Static Drain−Source On−Resistance",
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          "unit": "mΩ",
          "min": null,
          "typ": 9.8,
          "max": 14,
          "conditions": "VGS = −1.8 V, ID = −10.5 A",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Static Drain−Source On−Resistance",
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          "min": null,
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          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "On–State Drain Current",
          "symbol": "ID(on)",
          "kind": "electrical",
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          "min": -50,
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          "conditions": "VGS = −4.5 V, VDS = −5 V",
          "source_page": 2,
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        },
        {
          "name": "Gate Resistance",
          "symbol": "Rg",
          "kind": "electrical",
          "unit": "Ω",
          "min": 0.1,
          "typ": 3,
          "max": 6,
          "conditions": "",
          "source_page": 2,
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        },
        {
          "name": "Turn–On Delay Time",
          "symbol": "td(on)",
          "kind": "electrical",
          "unit": "ns",
          "min": null,
          "typ": 20,
          "max": 36,
          "conditions": "VDD = −10 V, ID = −1 A, VGS = −4.5 V, RGEN = 6 Ω",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Turn–On Rise Time",
          "symbol": "tr",
          "kind": "electrical",
          "unit": "ns",
          "min": null,
          "typ": 24,
          "max": 38,
          "conditions": "VDD = −10 V, ID = −1 A, VGS = −4.5 V, RGEN = 6 Ω",
          "source_page": 2,
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        {
          "name": "Turn–Off Delay Time",
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          "min": null,
          "typ": 300,
          "max": 480,
          "conditions": "VDD = −10 V, ID = −1 A, VGS = −4.5 V, RGEN = 6 Ω",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Turn–Off Fall Time",
          "symbol": "tf",
          "kind": "electrical",
          "unit": "ns",
          "min": null,
          "typ": 140,
          "max": 224,
          "conditions": "VDD = −10 V, ID = −1 A, VGS = −4.5 V, RGEN = 6 Ω",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Total Gate Charge",
          "symbol": "Qg",
          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 86,
          "max": 120,
          "conditions": "VDS = −10 V, ID = −1 A, VGS = −4.5 V",
          "source_page": 2,
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        },
        {
          "name": "Maximum Continuous Drain–Source Diode Forward Current",
          "symbol": "IS",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": -2.1,
          "conditions": "",
          "source_page": 2,
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        },
        {
          "name": "Drain–Source Diode Forward Voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": -0.6,
          "max": -1.2,
          "conditions": "VGS = 0 V, IS = −2.1 A (Note 2)",
          "source_page": 2,
          "source": "datasheet"
        }
      ]
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  "discovery_pitch": "FDS4465 (onsemi) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
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