component

FDS4435BZ

Public Made by Adom

by adom

onsemi MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 29d ago
viewers fds4435bz: viewers · Ray 29d ago
fds4435bz-etched.glb fds4435bz: factory component page (tier=lcsc) · Ray 29d ago
fds4435bz-etched.step fds4435bz: factory component page (tier=lcsc) · Ray 29d ago
fds4435bz-hero.glb fds4435bz: hero GLB from the etched model (keeps the MPN mark) · Ray 29d ago
fds4435bz-hero.overlay.json Publish 0.1.0 · Ray 29d ago
fds4435bz.glb Publish 0.1.0 · Ray 29d ago
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fds4435bz.lbr Publish 0.1.0 · Ray 29d ago
fds4435bz.step Publish 0.1.0 · Ray 29d ago
package.json Publish 0.1.0 · Ray 29d ago
page.json fds4435bz: specified limits as data (metadata.characteristics, 30 rows from the datasheet) · Ray 24d ago
README.md fds4435bz: specified limits as data (metadata.characteristics, 30 rows from the datasheet) · Ray 24d ago

FDS4435BZ

onsemi · MOSFETs · SO-8

FDS4435BZ from onsemi, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel PowerTrench MOSFET, rated VDS = -30 V with VGS up to ±25 V.
2 S passive Source terminal of the P-channel PowerTrench MOSFET, rated VDS = -30 V with VGS up to ±25 V.
3 S passive Source terminal of the P-channel PowerTrench MOSFET, rated VDS = -30 V with VGS up to ±25 V.
4 G input Gate terminal; VGS is rated ±25 V, and the internal gate-source diode is for ESD protection only with no gate overvoltage rating implied (Note 3).
5 D passive Drain terminal of the P-channel MOSFET, rated -8.8 A continuous at TA = 25°C (Note 1a).
6 D passive Drain terminal of the P-channel MOSFET, rated -8.8 A continuous at TA = 25°C (Note 1a).
7 D passive Drain terminal of the P-channel MOSFET, rated -8.8 A continuous at TA = 25°C (Note 1a).
8 D passive Drain terminal of the P-channel MOSFET, rated -8.8 A continuous at TA = 25°C (Note 1a).

Key specifications

Parameter Value
Manufacturer onsemi
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Voltage VDS -30 V 2
Gate to Source Voltage VGS -25 25 V 2
Drain Current -Continuous ID -8.8 A TA = 25°C (Note 1a) 2
Drain Current -Pulsed ID -50 A 2
Power Dissipation PD 2.5 W TA = 25°C (Note 1a) 2
Power Dissipation PD 1 W TA = 25°C (Note 1b) 2
Single Pulse Avalanche Energy EAS 24 mJ Note 4: Starting TJ = 25°C, L = 1mH, IAS = -7A, VDD = -30V, VGS = -10V 2
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 °C 2
Breakdown Voltage BVDSS -30 V ID = -250A, VGS = 0V 3
Zero Gate Voltage Drain Current IDSS 1 µA VDS = -24V, VGS = 0V 3
Gate to Source Leakage Current IGSS -10 10 µA VGS = ±25V, VDS = 0V 3
Gate to Source Threshold Voltage VGS(th) -1 -2.1 -3 V VGS = VDS, ID = -250A 3
Static Drain to Source On Resistance rDS(on) 16 20 mΩ VGS = -10V, ID = -8.8A 3
Static Drain to Source On Resistance rDS(on) 26 35 mΩ VGS = -4.5V, ID = -6.7A 3
Static Drain to Source On Resistance rDS(on) 22 28 mΩ VGS = -10V, ID = -8.8A, TJ = 125°C 3
Input Capacitance Ciss 1385 1845 pF VDS = -15V, VGS = 0V, f = 1MHz 3
Output Capacitance Coss 275 365 pF VDS = -15V, VGS = 0V, f = 1MHz 3
Reverse Transfer Capacitance Crss 230 345 pF VDS = -15V, VGS = 0V, f = 1MHz 3
Turn-On Delay Time td(on) 10 20 ns VDD = -15V, ID = -8.8A, VGS = -10V, RGEN = 6 3
Rise Time tr 6 12 ns VDD = -15V, ID = -8.8A, VGS = -10V, RGEN = 6 3
Turn-Off Delay Time td(off) 30 48 ns VDD = -15V, ID = -8.8A, VGS = -10V, RGEN = 6 3
Fall Time tf 12 22 ns VDD = -15V, ID = -8.8A, VGS = -10V, RGEN = 6 3
Total Gate Charge Qg 28 40 nC VGS = 0V to -10V, VDD = -15V, ID = -8.8A 3
Total Gate Charge Qg 16 23 nC VGS = 0V to -5V 3
Source to Drain Diode Forward Voltage VSD -0.9 -1.2 V VGS = 0V, IS = -8.8A (Note 2) 3
Reverse Recovery Time trr 29 44 ns IF = -8.8A, di/dt = 100A/s 3
Reverse Recovery Charge Qrr 23 35 nC IF = -8.8A, di/dt = 100A/s 3
Thermal Resistance, Junction to Case RθJC 25 °C/W 2
Thermal Resistance, Junction to Ambient RθJA 50 °C/W Note 1a: 1 in2 pad of 2 oz copper 2
Thermal Resistance, Junction to Ambient RθJA 125 °C/W Note 4b: minimum pad of 2 oz copper 3

CAD (KiCad official)

  • Symbol: FDS4435BZ
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: fds4435bz-etched.step / fds4435bz-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fds4435bz.step / fds4435bz.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (8 pp, sha256 0e590739db8123e6, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF