component
FDS4435BZ
Public Made by Adomby adom
onsemi MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownFDS4435BZ
onsemi · MOSFETs · SO-8
FDS4435BZ from onsemi, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel PowerTrench MOSFET, rated VDS = -30 V with VGS up to ±25 V. |
| 2 | S | passive | Source terminal of the P-channel PowerTrench MOSFET, rated VDS = -30 V with VGS up to ±25 V. |
| 3 | S | passive | Source terminal of the P-channel PowerTrench MOSFET, rated VDS = -30 V with VGS up to ±25 V. |
| 4 | G | input | Gate terminal; VGS is rated ±25 V, and the internal gate-source diode is for ESD protection only with no gate overvoltage rating implied (Note 3). |
| 5 | D | passive | Drain terminal of the P-channel MOSFET, rated -8.8 A continuous at TA = 25°C (Note 1a). |
| 6 | D | passive | Drain terminal of the P-channel MOSFET, rated -8.8 A continuous at TA = 25°C (Note 1a). |
| 7 | D | passive | Drain terminal of the P-channel MOSFET, rated -8.8 A continuous at TA = 25°C (Note 1a). |
| 8 | D | passive | Drain terminal of the P-channel MOSFET, rated -8.8 A continuous at TA = 25°C (Note 1a). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDS | -30 | V | 2 | |||
| Gate to Source Voltage | VGS | -25 | 25 | V | 2 | ||
| Drain Current -Continuous | ID | -8.8 | A | TA = 25°C (Note 1a) | 2 | ||
| Drain Current -Pulsed | ID | -50 | A | 2 | |||
| Power Dissipation | PD | 2.5 | W | TA = 25°C (Note 1a) | 2 | ||
| Power Dissipation | PD | 1 | W | TA = 25°C (Note 1b) | 2 | ||
| Single Pulse Avalanche Energy | EAS | 24 | mJ | Note 4: Starting TJ = 25°C, L = 1mH, IAS = -7A, VDD = -30V, VGS = -10V | 2 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Breakdown Voltage | BVDSS | -30 | V | ID = -250A, VGS = 0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = -24V, VGS = 0V | 3 | ||
| Gate to Source Leakage Current | IGSS | -10 | 10 | µA | VGS = ±25V, VDS = 0V | 3 | |
| Gate to Source Threshold Voltage | VGS(th) | -1 | -2.1 | -3 | V | VGS = VDS, ID = -250A | 3 |
| Static Drain to Source On Resistance | rDS(on) | 16 | 20 | mΩ | VGS = -10V, ID = -8.8A | 3 | |
| Static Drain to Source On Resistance | rDS(on) | 26 | 35 | mΩ | VGS = -4.5V, ID = -6.7A | 3 | |
| Static Drain to Source On Resistance | rDS(on) | 22 | 28 | mΩ | VGS = -10V, ID = -8.8A, TJ = 125°C | 3 | |
| Input Capacitance | Ciss | 1385 | 1845 | pF | VDS = -15V, VGS = 0V, f = 1MHz | 3 | |
| Output Capacitance | Coss | 275 | 365 | pF | VDS = -15V, VGS = 0V, f = 1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 230 | 345 | pF | VDS = -15V, VGS = 0V, f = 1MHz | 3 | |
| Turn-On Delay Time | td(on) | 10 | 20 | ns | VDD = -15V, ID = -8.8A, VGS = -10V, RGEN = 6 | 3 | |
| Rise Time | tr | 6 | 12 | ns | VDD = -15V, ID = -8.8A, VGS = -10V, RGEN = 6 | 3 | |
| Turn-Off Delay Time | td(off) | 30 | 48 | ns | VDD = -15V, ID = -8.8A, VGS = -10V, RGEN = 6 | 3 | |
| Fall Time | tf | 12 | 22 | ns | VDD = -15V, ID = -8.8A, VGS = -10V, RGEN = 6 | 3 | |
| Total Gate Charge | Qg | 28 | 40 | nC | VGS = 0V to -10V, VDD = -15V, ID = -8.8A | 3 | |
| Total Gate Charge | Qg | 16 | 23 | nC | VGS = 0V to -5V | 3 | |
| Source to Drain Diode Forward Voltage | VSD | -0.9 | -1.2 | V | VGS = 0V, IS = -8.8A (Note 2) | 3 | |
| Reverse Recovery Time | trr | 29 | 44 | ns | IF = -8.8A, di/dt = 100A/s | 3 | |
| Reverse Recovery Charge | Qrr | 23 | 35 | nC | IF = -8.8A, di/dt = 100A/s | 3 | |
| Thermal Resistance, Junction to Case | RθJC | 25 | °C/W | 2 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 50 | °C/W | Note 1a: 1 in2 pad of 2 oz copper | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 125 | °C/W | Note 4b: minimum pad of 2 oz copper | 3 |
CAD (KiCad official)
- Symbol:
FDS4435BZ - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
fds4435bz-etched.step/fds4435bz-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fds4435bz.step/fds4435bz.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (8 pp, sha256
0e590739db8123e6, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).